TLCY5210-AS21 [VISHAY]
Visible LED, Clear;型号: | TLCY5210-AS21 |
厂家: | VISHAY |
描述: | Visible LED, Clear |
文件: | 总6页 (文件大小:244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLCY521.
Vishay Semiconductors
High Intensity LED, ∅ 5 mm Untinted Non-Diffused
Description
The TLCY5210 is a clear, non diffused 5 mm LED for
high end applications where supreme luminous inten-
sity required.
These lamps with clear untinted plastic case utilize
the highly developed ultrabright AlInGaP, OMA tech-
nology.
The lens and the viewing angle is optimized to
achieve best performance of light output and visibility.
94 8631
Features
• Untinted non diffused lens
• Utilizing ultrabright AllnGaP, OMA tech-
• Lead (Pb)-free device
nology
e3
• High luminous intensity
Applications
Interior and exterior lighting
Outdoor LED panels
Instrumentation and front panel indicators
Replaces incandescent lamps
Traffic signals
• High operating temperature:
Tj (chip junction temperature)
up to 125 °C for AllnGaP devices
• Luminous intensity and color categorized for each
packing unit
• ESD-withstand voltage:
2 kV acc. to MIL STD 883 D, Method 3015.7
for AllnGaP
Light guide design
Parts Table
Part
Color, Luminous Intensity
Yellow, I > 3200 mcd
Angle of Half Intensity ( ϕ)
15 °
Technology
AllnGaP on Si
TLCY5210
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLCY5210
Parameter
Test condition
Part
Symbol
Value
5
Unit
V
Reverse voltage
V
I
R
DC Forward current
T
t
≤ 85 °C
50
0.1
mA
A
amb
F
Surge forward current
Power dissipation
≤ 10 µs
I
FSM
p
P
150
mW
°C
V
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
T
125
j
T
- 40 to + 100
- 40 to + 100
260
°C
amb
T
°C
stg
t ≤ 5 s, 2 mm from body
T
°C
sd
Thermal resistance junction/
ambient
R
300
K/W
thJA
Document Number 84722
Rev. 1.1, 14-Jul-05
www.vishay.com
1
TLCY521.
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Yellow
TLCY5210
Parameter
Test condition
= 50 mA
Part
Symbol
Min
Typ.
Max
597
Unit
mcd
1)
I
I
I
I
TLCY5210
I
V
3200
Luminous intensity
F
F
F
F
Dominant wavelength
= 50 mA
= 50 mA
= 50 mA
λ
λ
585
591
593
17
nm
nm
nm
d
p
Peak wavelength
Spectral bandwidth at 50 % I
∆λ
rel
max
Angle of half intensity
I
I
I
= 50 mA
= 50 mA
= 10 µA
ϕ
15
deg
V
F
F
R
Forward voltage
Reverse voltage
V
V
2.2
3.0
F
5
V
R
Luminous Intensity Classification
Group
Light Intensity (mcd) / Luminous Flux [mlm]
min
max
4800
6400
8600
HH
II
2400
3200
KK
LL
4300
5750
11500
15000
20000
27000
36000
48000
64000
86000
115000
MM
NN
PP
QQ
RR
SS
TT
UU
7500
10000
13500
18000
24000
32000
43000
57500
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
Yellow
Yellow
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
– Forward Voltage ( V )
0
20
40
60
80
100 120
15974-4
V
16710-3
F
T
– Ambient Temperature ( °C )
amb
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Ambient Temperature
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2
Document Number 84722
Rev. 1.1, 14-Jul-05
TLCY521.
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10.00
1.00
0.10
0.01
250
200
150
100
50
30 mA
Yellow
50 mA
Yellow
10 mA
0
–50
–100
–150
–200
1.00
10.00
100.00
–50 –25
0
25
50
75
100
I
F
– Forward Current ( mA )
17015
T
amb
– Ambient Temperature ( qC )
17018
Figure 3. Relative Luminous Intensity vs. Forward Current
Figure 6. Forward Voltage vs. Ambient Temperature
0q
10q
20q
1.2
30q
40q
Yellow
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
50q
60q
70q
80q
0.7
540 550 560 570 580 590 600 610 620 630 640
λ - Wavelength ( nm )
0.6
0.6 0.4 0.2
0
0.2
0.4
16008
17534
Figure 4. Relative Intensity vs. Wavelength
Figure 7. Relative Luminous Intensity
2.5
6
4
Yellow
Yellow
2.0
1.5
1.0
0.5
0.0
2
0
–2
–4
–6
–50 –25
0
25
50
75
100
–50 –25
0
25
50
75
100
17016
T
amb
– Ambient Temperature ( qC )
T
amb
– Ambient Temperature ( qC )
17017
Figure 5. Relative Luminous Intensity vs. Amb. Temperature
Figure 8. Change of Dominant Wavelength vs. Ambient
Temperature
Document Number 84722
Rev. 1.1, 14-Jul-05
www.vishay.com
3
TLCY521.
Vishay Semiconductors
Package Dimensions in mm
17167
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4
Document Number 84722
Rev. 1.1, 14-Jul-05
TLCY521.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84722
Rev. 1.1, 14-Jul-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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