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SUM45N25-58 [VISHAY]

N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET; N沟道250 -V （ DS ） ， 175度Celcious ， MOSFET
SUM45N25-58
型号： SUM45N25-58
厂家： VISHAY    VISHAY
描述：

N-Channel 250-V (D-S), 175 Degrees Celcious, MOSFET
N沟道250 -V （ DS ） ， 175度Celcious ， MOSFET

晶体 晶体管 功率场效应晶体管
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SUM45N25-58  
Vishay Siliconix  
New Product  
N-Channel 250-V (D-S) 175_C MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
D 175_C Junction Temperature  
PRODUCT SUMMARY  
D New Low Thermal Resistance Package  
APPLICATIONS  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.058 @ V = 10 V  
45  
43  
GS  
250  
D Primary Side Switch  
0.062 @ V = 6 V  
GS  
D Plasma Display Panel Sustainer Function  
D
TO-263  
G
G
D S  
Top View  
S
N-Channel MOSFET  
Ordering Information: SUM45N25-58-  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
250  
DS  
V
GS  
V
"30  
45  
T
= 25_C  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
= 125_C  
25  
C
A
Pulsed Drain Current  
Avalanche Current  
I
70  
DM  
I
35  
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
61  
mJ  
b
T
T
= 25_C  
375  
C
a
Maximum Power Dissipation  
P
W
D
c
= 25_C  
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
Junction-to-Ambient (PCB Mount)  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case (Drain)  
R
0.4  
Notes  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 72314  
S-31515—Rev. A, 14-Jul-03  
www.vishay.com  
1
 
SUM45N25-58  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
V
V
= 0 V, I = 250 mA  
250  
2
(BR)DSS  
DS  
D
V
V
V
DS  
= V , I = 250 mA  
4
GS(th)  
GS  
D
V
DS  
= 0 V, V = "30 V  
GS  
Gate-Body Leakage  
I
"250  
nA  
GSS  
V
DS  
= 200 V, V = 0 V  
1
GS  
V
V
= 200 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 200 V, V = 0 V, T = 175_C  
250  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
w 5 V, V = 10 V  
70  
A
D(on)  
GS  
V
= 10 V, I = 20 A  
0.047  
0.058  
0.121  
0.163  
0.062  
GS  
D
V
= 10 V, I = 20 A, T = 125_C  
GS  
D
J
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
GS  
= 10 V, I = 20 A, T = 175_C  
D
J
V
= 6 V, I = 15 A,  
0.049  
70  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 20 A  
S
DS  
D
Dynamicb  
Input Capacitance  
C
C
5000  
300  
170  
95  
iss  
Output Capacitance  
pF  
V
GS  
= 0 V, V = 25 V, f = 1 MHz  
DS  
oss  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
140  
g
c
Gate-Source Charge  
Q
Q
28  
V
DS  
= 125 V, V = 10 V, I = 45 A  
nC  
gs  
gd  
GS  
D
c
Gate-Drain Charge  
34  
f = 1 MHz  
Gate Resistance  
R
1.6  
22  
W
g
c
Turn-On Delay Time  
t
35  
330  
60  
d(on)  
c
Rise Time  
t
r
220  
40  
V
= 100 V, R = 2.78 W  
L
= 10 V, R = 2.5 W  
GEN G  
DD  
ns  
c
I
D
^ 45 A, V  
Turn-Off Delay Time  
t
d(off)  
c
Fall Time  
t
f
145  
220  
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
45  
70  
S
A
Pulsed Current  
I
SM  
a
I
= 45 A, V = 0 V  
GS  
Forward Voltage  
V
1.0  
150  
12  
1.5  
225  
18  
2
V
ns  
A
F
SD  
Reverse Recovery Time  
t
rr  
I
RM(REC)  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
F
= 45 A, di/dt = 100 A/ms  
Q
0.9  
mC  
rr  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 72314  
S-31515—Rev. A, 14-Jul-03  
www.vishay.com  
2
SUM45N25-58  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
100  
100  
80  
60  
40  
20  
0
V
GS  
= 10 thru 7 V  
6 V  
80  
60  
40  
20  
0
T
= 125_C  
C
5 V  
4 V  
25_C  
-55_C  
0
2
4
6
8
10  
0
1
2
3
4
5
6
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
150  
120  
90  
60  
30  
0
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
T
= -55_C  
C
25_C  
125_C  
V
GS  
= 6 V  
V
GS  
= 10 V  
0
10  
20  
D
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
I
- Drain Current (A)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
16  
12  
8
V
= 125 V  
= 45 A  
DS  
I
D
C
iss  
4
C
rss  
C
oss  
0
0
40  
80  
120  
160  
200  
0
30  
60  
90  
120  
150  
180  
V
DS  
- Drain-to-Source Voltage (V)  
Q
g
- Total Gate Charge (nC)  
Document Number: 72314  
S-31515—Rev. A, 14-Jul-03  
www.vishay.com  
3
SUM45N25-58  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
100  
V
= 10 V  
= 20 A  
GS  
I
D
T = 150_C  
T = 25_C  
J
J
10  
1
-50 -25  
0
25  
50  
75 100 125 150 175  
0
0.3  
0.6  
0.9  
1.2  
T
- Junction Temperature (_C)  
V
SD  
- Source-to-Drain Voltage (V)  
J
Drain Source Breakdown vs.  
Junction Temperature  
Avalanche Current vs. Time  
100  
300  
290  
280  
270  
260  
250  
240  
230  
I
D
= 1.0 mA  
10  
1
I
AV  
(A) @ T = 25_C  
A
I
AV  
(A) @ T = 150_C  
A
0.1  
-50 -25  
0
25  
50  
75 100 125 150 175  
0.00001  
0.0001  
0.001  
0.01  
(Sec)  
0.1  
1
t
in  
T
- Junction Temperature (_C)  
J
Document Number: 72314  
S-31515—Rev. A, 14-Jul-03  
www.vishay.com  
4
SUM45N25-58  
Vishay Siliconix  
New Product  
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area, Case Temperature  
100  
10  
50  
40  
30  
20  
10  
0
10 ms  
Limited  
by r  
100 ms  
DS(on)  
1 ms  
10 ms  
1
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
1000  
V
DS  
- Drain-to-Source Voltage (V)  
T
- Ambient Temperature (_C)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72314  
S-31515—Rev. A, 14-Jul-03  
www.vishay.com  
5

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