SUD50N06-36-T4-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUD50N06-36-T4-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SUD50N06-36
Vishay Siliconix
N-Channel 60-V (D-S), 150 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
100 % Rg & UIS Tested
VDS (V)
rDS(on) (Ω)
Qg (Typ)
I
D (A)a
12
•
RoHS
0.036 at VGS = 10 V
0.042 at VGS = 4.5 V
COMPLIANT
60
10.5 nC
12
APPLICATIONS
•
LCD TV Inverter
•
Push Pull Converter
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number:
SUD50N06-36-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
12a
12a
5.9b
4.7b
50
12a
2.0b
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
15
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
EAS
mJ
W
11.2
24
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
15.3
2.4b
1.5b
- 55 to 150
Maximum Power Dissipation
PD
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Symbol
RthJA
Typical
Maximum
Unit
Steady State
Steady State
43
52
°C/W
RthJC
Maximum Junction-to-Case
4.3
5.2
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 70437
S-72510-Rev. A, 03-Dec-07
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1
New Product
SUD50N06-36
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 1 mA
ID = 250 µA
60
V
55
mV/°C
- 6.3
VDS = VGS, ID = 250 µA
1.0
30
3.0
100
1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 70 °C
VDS ≥ 5 V, VGS = 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
rDS(on)
gfs
µA
A
20
VGS = 10 V, ID = 10 A
0.028
0.033
20
0.036
0.042
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 8 A
Forward Transconductancea
Dynamicb
VDS = 15 V, ID = 10 A
Input Capacitance
Ciss
Coss
Crss
1100
90
55
21
10.5
3.5
4.2
3.3
18
250
35
68
6
Output Capacitance
Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 5 A
pF
32
16
Total Gate Charge
Qg
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
VDS = 30 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
6.5
30
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
400
55
VDD = 30 V, RL = 1 Ω
ID ≅ 30 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
110
12
ns
Turn-On Delay Time
Rise Time
9
18
VDD = 30 V, RL = 1 Ω
ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
19
7
30
14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IS = 5.5 A
20
50
1.2
50
50
A
0.85
25
25
19
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
ns
nC
Qrr
ta
IF = 5.5 A, di/dt = 100 A/µs, TJ = 25 °C
ns
tb
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70437
S-72510-Rev. A, 03-Dec-07
New Product
SUD50N06-36
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
45
36
27
18
9
V
GS
= 10 thru 5 V
36
27
18
9
4 V
T
C
= 25 °C
T
C
= 125 °C
3 V
- 55 °C
0
0
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
1500
1200
900
600
300
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
9
18
27
36
45
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
D
= 10 A
I
D
= 5 A
V
GS
= 10 V
V
DS
= 30 V
6
V
= 4.5 V
GS
V
DS
= 48 V
4
2
0
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
25
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 70437
S-72510-Rev. A, 03-Dec-07
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3
New Product
SUD50N06-36
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
10
I
D
= 10 A
0.08
0.06
0.04
0.02
0.00
T
J
= 150 °C
1
T
J
= 25 °C
125 °C
25 °C
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
V
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.5
0.2
80
64
48
32
16
0
- 0.1
- 0.4
- 0.7
- 1.0
I
= 5 mA
D
I
D
= 250 µA
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
80
64
48
32
16
0
Limited by r
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single Pulse
0.01
0.01
0.001
0.01
0.1
1
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Time (s)
* V
GS
minimum V at which r
is specified
GS
DS(on)
Single Pulse Power, Junction-to-Case
Safe Operating Area, Junction-to-Ambient
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Document Number: 70437
S-72510-Rev. A, 03-Dec-07
New Product
SUD50N06-36
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
7
6
4
3
1
0
Limited by r
*
DS(on)
10
1
100 µs
1 ms
10 ms
100 ms, 1 s
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
0
25
50
75
100
125
150
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
A
- Ambient Temperature (°C)
* V
GS
minimum V at which r
is specified
GS
DS(on)
Current Derating*, Junction-to-Ambient
Safe Operating Area, Junction-to-Case
21
17
13
8
30
24
18
12
6
Package Limited
4
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating*, Junction-to-Case
Current Derating*, Junction-to-Case
3.0
2.4
1.8
1.2
0.6
0.0
* The power dissipation PD is based on TJ(max) = 175 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power Derating*, Junction-to-Ambient
Document Number: 70437
S-72510-Rev. A, 03-Dec-07
www.vishay.com
5
New Product
SUD50N06-36
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 52 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70437.
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Document Number: 70437
S-72510-Rev. A, 03-Dec-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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