SUD50NP04-77P-T4-E3 [VISHAY]
Complementary N- and P-Channel 40-V (D-S) MOSFET; 互补N和P沟道40 - V（D -S）的MOSFET
| 型号： | SUD50NP04-77P-T4-E3 |
| 厂家： | 
VISHAY |
| 描述： | Complementary N- and P-Channel 40-V (D-S) MOSFET |
| 文件： | 总12页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SUD50NP04-77P
Vishay Siliconix
Complementary N- and P-Channel 40-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
100 % UIS Tested
VDS (V)
rDS(on) (Ω)
Qg (Typ.)
I
D (A)a
8
•
RoHS
0.037 at VGS = 10 V
0.046 at VGS = 4.5 V
0.040 at VGS = - 10 V
0.050 at VGS = - 4.5 V
COMPLIANT
N-Channel
P-Channel
40
26
8
APPLICATIONS
- 8
- 8
•
Backlight Inverter for LCD Display
- 40
25.5
•
Full Bridge DC/DC Converter
TO-252-4L
D-PAK
D
D
Top View
Drain Connected to
G
1
G
2
Tab
S
1
S
2
S
1
G
1
S G
2 2
N-Channel MOSFET
P-Channel MOSFET
Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
N-Channel
P-Channel
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
40
- 40
V
VGS
20
8a
8a
8a, b, c
- 8a
- 8a
- 8a, b, c
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
7b, c
- 7.4b, c
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
30
- 30
A
8a
4.3b, c
30
- 8a
- 4.6b, c
- 30
TC = 25 °C
TA = 25 °C
ISM
IAS
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
7
15
11.25
24
L = 0.1 mH
EAS
2.45
10.8
6.9
5.2b, c
3.3b, c
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
15.3
PD
Maximum Power Dissipation
5.6b, c
3.6b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Typ. Max.
P-Channel
Typ. Max.
Parameter
Maximum Junction-to-Ambientb, d
Symbol
RthJA
Unit
t ≤ 10 s
20
24
18
22
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
9.4
11.5
4.3
5.2
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 60 °C/W (N-Channel) and 52 °C/W (P-Channel).
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
1
New Product
SUD50NP04-77P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a Max.
Unit
Static
VGS = 0 V, ID = 250 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
40
VDS
Drain-Source Breakdown Voltage
V
VGS = 0 V, ID = - 250 µA
- 40
ID = 250 µA
44
- 41
- 5.5
4.3
V
DS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
mV/°C
ID = 250 µA
VGS(th) Temperature Coefficient
I
D = - 250 µA
VDS = VGS, ID = 250 µA
DS = VGS, ID = - 250 µA
1.4
2.5
VGS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
V
P-Ch
N-Ch
P-Ch
N-Ch
- 1.4
- 2.7
100
- 100
1
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = 40 V, VGS = 0 V
V
DS = - 40 V, VGS = 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 1
10
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
V
DS = 40 V, VGS = 0 V, TJ = 55 °C
V
DS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
- 10
10
V
DS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 5 A
- 10
0.0305 0.037
0.030 0.040
0.037 0.046
0.036 0.050
22
V
GS = - 10 V, ID = - 5 A
Drain-Source On-State Resistanceb
Ω
S
V
GS = 4.5 V, ID = 4 A
GS = - 4.5 V, ID = - 4 A
VDS = 15 V, ID = 5 A
V
Forward Transconductanceb
V
DS = - 15 V, ID = - 5 A
20
Dynamica
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
640
1555
73
Ciss
Coss
Crss
Input Capacitance
N-Channel
DS = 20 V, VGS = 0 V, f = 1 MHz
V
Output Capacitance
pF
176
41
P-Channel
DS = - 20 V, VGS = 0 V, f = 1 MHz
V
Reverse Transfer Capacitance
142
VDS = 20 V, VGS = 10 V, ID = 5 A
DS = - 20 V, VGS = - 10 V, ID = - 5 A
11.7
20
V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
38.5
5.3
17
60
9.0
27
Qg
Total Gate Charge
N-Channel
DS = 20 V, VGS = 4.5 V, ID = 5 A
nC
V
1.9
4.2
1.7
7.0
2.2
3.0
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
P-Channel
V
DS = - 20 V, VGS = - 4.5 V, ID = - 5 A
f = 1 MHz
Ω
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Document Number: 73989
S-80109-Rev. B, 21-Jan-08
New Product
SUD50NP04-77P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.a Max.
Unit
Dynamica
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9
18
20
20
25
25
60
16
20
30
80
25
110
25
60
20
25
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
N-Channel
DD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
10
11
14
14
36
8
V
P-Channel
DD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
V
10
18
47
14
60
14
35
10
13
ns
Turn-On Delay Time
Rise Time
N-Channel
DD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
V
P-Channel
DD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
V
Drain-Source Body Diode Characteristics
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
8
IS
TC = 25 °C
Continuous Source-Drain Diode Current
- 8
A
V
30
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
- 30
1.2
IS = 2 A
0.805
VSD
I
S = - 2 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.76
19
22
14
22
13
15
6
- 1.2
30
trr
Qrr
ta
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
40
N-Channel
IF = 2 A, di/dt = 100 A/µs, TJ = 25 °C
25
nC
40
P-Channel
IF = - 2 A, di/dt = - 100 A/µs, TJ = 25 °C
ns
tb
Reverse Recovery Rise Time
7
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
3
New Product
SUD50NP04-77P
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
6
5
4
3
2
1
0
V
= 10 thru 5 V
4 V
GS
T
= 25 °C
C
T
C
= 125 °C
1
3 V
T
C
= - 55 °C
4
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
3
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
640
480
320
160
0
0.060
0.052
0.044
0.036
0.028
0.020
C
iss
V
GS
= 4.5 V
V
= 10 V
GS
C
oss
C
rss
0
6
12
18
24
30
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
D
Capacitance
On-Resistance vs. Drain Current
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 5 A
I = 5 A
D
V
GS
= 10 V
D
V
= 10 V
DS
V
DS
= 20 V
6
V
GS
= 4.5 V
V
= 30 V
DS
4
2
0
0.0
2.5
5.0
7.5
10.0
12.5
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q - Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
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Document Number: 73989
S-80109-Rev. B, 21-Jan-08
New Product
SUD50NP04-77P
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
0.16
0.12
0.08
0.04
0
100
10
1
I
= 5 A
D
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
T
A
= 125 °C
T
= 25 °C
A
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.4
0.2
I
= 250 µA
D
I
= 5 mA
D
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0
25
50
75
100 125 150
0.0001
0.001
0.01
0.1
Time (s)
Single Pulse Power, Junction-to-Ambient
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
10
1
100
Limited by r
*
80
60
40
20
0
DS(on)
100 µs
1 ms
10 ms
100 ms
10 s
DC
0.1
T
= 25 °C
A
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
Time (s)
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which r is specified
DS(on)
GS
GS
Single Pulse Power, Junction-to-Case
Safe Operating Area, Junction-to-Ambient
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
5
New Product
SUD50NP04-77P
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
7
5
4
3
1
0
Limited by r
*
DS(on)
100 µs
1 ms
10 ms
100 ms, DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
0
25
50
75
100
125
150
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
A
- Ambient Temperature (°C)
* V > minimum V at which r is specified
DS(on)
GS
GS
Current Derating**, Junction-to-Ambient
Safe Operating Area, Junction-to-Case
15
12
9
2.5
2.0
1.5
1.0
0.5
0.0
Package Limited
6
3
0
0
25
50
75
100
125
150
0
25
50
T - Ambient Temperature (°C)
A
75
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Ambient
Current Derating**, Junction-to-Case
15
12
9
6
3
** The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Case
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6
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
New Product
SUD50NP04-77P
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 60 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
7
New Product
SUD50NP04-77P
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
6
5
4
3
2
1
0
V
GS
= 10 thru 4 V
T
= 25 °C
J
3 V
T
J
= 125 °C
T
J
= - 55 °C
3.2 4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.8
1.6
2.4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.050
0.044
0.038
0.032
0.026
0.020
2500
2000
1500
1000
500
C
iss
V
V
= 4.5 V
= 10 V
GS
GS
C
oss
C
rss
0
0
6
12
18
24
30
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 5 A
I
= 5 A
V
GS
= 10 V
D
D
V
= 10 V
DS
V
DS
= 20 V
6
V
GS
= 4.5 V
V
= 30 V
DS
4
2
0
0
8
16
24
32
40
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
Q - Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
www.vishay.com
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Document Number: 73989
S-80109-Rev. B, 21-Jan-08
New Product
SUD50NP04-77P
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
0.09
0.06
0.03
100
I
= 5 A
D
T
J
= 150 °C
T
J
= 25 °C
10
T
A
= 125 °C
T
A
= 25 °C
0
1
0
2
4
6
8
10
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
120
96
72
48
24
0
0.7
0.5
I
= 250 µA
D
0.3
I
= 5 mA
D
0.1
- 0.1
- 0.3
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
T
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
J
Threshold Voltage
100
120
96
72
48
24
0
Limited by r
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
Time (s)
* V > minimum V at which r is specified
DS(on)
GS
GS
Single Pulse Power, Junction-to-Case
Safe Operating Area, Junction-to-Ambient
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
9
New Product
SUD50NP04-77P
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
7
6
4
3
1
0
Limited by r
*
DS(on)
100 µs
1 ms
10 ms
100 ms
DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
100
0
25
50
75
100
125
150
0.1
1
10
V
- Drain-to-Source Voltage (V)
DS
T
A
- Ambient Temperature (°C)
* V > minimum V at which r is specified
DS(on)
GS
GS
Current Derating**, Junction-to-Ambient
Safe Operating Area, Junction-to-Case
3.5
2.8
2.1
1.4
0.7
0
22
18
13
9
Package Limited
4
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating**, Junction-to-Case
Power Derating, Junction-to-Ambient
35
28
21
14
7
** The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Case
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Document Number: 73989
S-80109-Rev. B, 21-Jan-08
New Product
SUD50NP04-77P
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 52 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73989.
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
11
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Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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