SUD50P04-09L [FREESCALE]
P-Channel 40 V (D-S) 175 °C MOSFET; P沟道40 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD50P04-09L |
| 厂家： | 
Freescale |
| 描述： | P-Channel 40 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)d
D 175_C Junction Temperature
APPLICATIONS
0.0094 @ V = -10 V
-50
-50
GS
-40
0.0145 @ V = -4.5
GS
V
D Automotive 12-V Boardnet
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50P04-09L
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
-40
DS
GS
V
V
"20
d
T
= 25_C
-50
C
Continuous Drain Current
I
D
d
(T = 175_C)
J
T
= 125_C
-50
C
A
Pulsed Drain Current
I
-100
-50
DM
Avalanche Current
I
AR
a
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
125
mJ
c
T
= 25_C
= 25_C
136
C
Power Dissipation
P
W
D
b, c
3
T
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
15
40
18
50
b
Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Junction-to-Case
0.82
1.1
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
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1 / 5
SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = -250 mA
-40
-1
(BR)DSS
GS
D
V
V
DS
= V , I = -250 mA
GS D
V
-3
GS(th)
V
DS
= 0 V, V = "20 V
GS
I
"100
-1
nA
GSS
V
= -32 V, V = 0 V
GS
DS
V
V
= -32 V, V = 0 V, T = 125_C
-50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= -32 V, V = 0 V, T = 175_C
-150
DS
GS
J
a
On-State Drain Current
I
V
DS
= -5 V, V = -10 V
-50
A
D(on)
GS
V
= -10 V, I = -24 A
0.0075
0.0094
0.014
GS
D
V
= -10 V, I = -50 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= -10 V, I = -50 A, T = 175_C
0.017
GS
D
J
V
GS
= -4.5 V, I = -18 A
0.0115
73
0.0145
D
a
Forward Transconductance
g
fs
V
= -5 V, I = -24 A
S
DS
D
Dynamicb
Input Capacitance
C
4800
700
550
102
18.5
27
iss
Output Capacitance
C
oss
V
= 0 V, V = -25 V, f = 1 MHz
pF
nC
GS
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
150
g
c
Gate-Source Charge
Q
Q
V
= -20 V, V = -10 V, I = -50 A
GS D
gs
gd
DS
c
Gate-Drain Charge
c
Turn-On Delay Time
t
10
15
90
d(on)
c
Rise Time
t
r
60
V
DD
= -20 V, R = 0.4 W
L
ns
c
Turn-Off Delay Time
t
145
140
220
220
I
D
] -50 A, V = -10 V, R = 6 W
GEN G
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
-50
-100
-1.5
85
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= -50 A, V = 0 V
-1.0
55
V
GS
Reverse Recovery Time
t
rr
I
F
= -50 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
V
GS
= 10 thru 5 V
4 V
80
60
40
20
0
80
60
40
T
= 125_C
C
20
3 V
2 V
25_C
-55_C
0
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
V
GS
DS
Transconductance
On-Resistance vs. Drain Current
120
100
80
60
40
20
0
0.020
0.016
0.012
0.008
0.004
0.000
T
= -55_C
25_C
125_C
C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
0
20
40
60
80
100
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
Gate Charge
10
8
8000
7000
6000
5000
4000
3000
2000
1000
0
V
= 20 V
= 50 A
DS
I
D
C
iss
6
4
2
C
oss
C
rss
0
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
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SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
100
V
= 10 V
= 50 A
GS
I
D
1.6
1.4
1.2
1.0
0.8
0.6
T = 150_C
J
T = 25_C
J
10
1
-50 -25
0
J
25
50
75 100 125 150 175
0.0
0.3
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
100
60
50
40
30
20
10
0
I
Limited
DM
r
Limited
DS(on)
P(t) = 0.0001
I
D(on)
Limited
P(t) = 0.001
P(t) = 0.01
10
1
T
= 25_C
C
Single Pulse
P(t) = 0.1
P(t) = 1
BV
Limited
10
DSS
0
25
50
75
100
125
150
175
0.1
1
100
T
- Case Temperature (_C)
C
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
10
1
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SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
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