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SUD50P04-15_05 [VISHAY]

P-Channel 40-V (D-S), 175C MOSFET; P通道40 -V （D -S ） ， 175 2 C MOSFET
SUD50P04-15_05
型号： SUD50P04-15_05
厂家： VISHAY    VISHAY
描述：

P-Channel 40-V (D-S), 175C MOSFET
P通道40 -V （D -S ） ， 175 2 C MOSFET
文件： 总5页 (文件大小：107K)
中文：  中文翻译
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SUD50P04-15  
Vishay Siliconix  
New Product  
P-Channel 40-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.015 @ V = –10 V  
–50  
–45  
GS  
–40  
0.023 @ V = –4.5 V  
GS  
S
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD50P04-15  
D
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
–40  
"20  
–50  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
C
b
Continuous Drain Current  
Pulsed Drain Current  
I
D
T
C
–40  
A
I
–150  
–50  
DM  
Continuous Source Current (Diode Conduction)  
I
S
b
T
= 25_C  
= 25_C  
100  
C
b
Maximum Power Dissipation  
P
D
W
a
T
A
3
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec.  
15  
40  
18  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
thJC  
Steady State  
_
C/W  
Maximum Junction-to-Case  
R
1.2  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. See SOA curve for voltage derating.  
Document Number: 71176  
S-00830—Rev. A, 24-Apr-00  
www.vishay.com S FaxBack 408-970-5600  
1
SUD50P04-15  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
V
= 0 V, I = –250 mA  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
–40  
GS  
D
(BR)DSS  
V
V
V
V
= V , I = –250 mA  
–1.0  
GS(th)  
DS  
GS  
D
= 0 V, V = "20 V  
I
"100  
–1  
nA  
mA  
A
DS  
GS  
GSS  
V
= –40 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
DSS  
V
V
= –40 V, V = 0 V, T = 125_C  
–50  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
= –5 V, V = –10 V  
–120  
D(on)  
GS  
V
GS  
= –10 V, I = –30 A  
0.012  
0.018  
0.015  
0.024  
0.023  
D
a
Drain-Source On-State Resistance  
r
= –10 V, I = –30 A, T = 125_C  
W
DS(on)  
GS  
D
J
V
GS  
= –4.5 V, I = –20 A  
D
a
Forward Transconductance  
g
fs  
V
DS  
= –15 V, I = –30 A  
20  
S
D
Dynamicb  
Input Capacitance  
C
5400  
640  
300  
85  
iss  
Output Capacitance  
C
oss  
V
GS  
= 0 V, V = –25 V, f = 1 MHz  
pF  
nC  
DS  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
130  
g
c
Gate-Source Charge  
Q
gs  
Q
gd  
V
DS  
= –20 V, V = –10 V, I = –50 A  
25  
GS  
D
c
Gate-Drain Charge  
15  
c
Turn-On Delay Time  
t
15  
25  
d(on)  
c
Rise Time  
t
380  
75  
580  
115  
210  
r
V
= –20 V, R = 0.4 W  
L
= –10 V, R = 2.5 W  
GEN G  
DD  
ns  
I
D
^ –50 A, V  
c
Turn-Off Delay Time  
t
d(off)  
c
Fall Time  
t
140  
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)  
Pulsed Current  
I
–150  
–1.5  
80  
A
V
SM  
a
Diode Forward Voltage  
V
SD  
I
F
= –50 A, V = 0 V  
–1.2  
40  
GS  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= –50 A, di/dt = 100 A/ms  
ns  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 71176  
S-00830—Rev. A, 24-Apr-00  
www.vishay.com S FaxBack 408-970-5600  
2
SUD50P04-15  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
250  
100  
80  
60  
40  
20  
0
7 V  
V
GS  
= 10, 9, 8 V  
T
C
= –55_C  
6 V  
200  
150  
100  
50  
25_C  
125_C  
5 V  
4 V  
2, 3 V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
6
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
80  
60  
40  
20  
0
0.04  
0.03  
0.02  
0.01  
0
T
C
= –55_C  
25_C  
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
120  
I
D
– Drain Current (A)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
8000  
6000  
4000  
2000  
0
20  
16  
12  
8
V
= 20 V  
= 50 A  
DS  
I
D
C
iss  
C
oss  
4
C
rss  
0
0
5
10  
15  
20  
25  
30  
0
40  
80  
120  
160  
V
DS  
– Drain-to-Source Voltage (V)  
Q – Total Gate Charge (nC)  
g
Document Number: 71176  
S-00830—Rev. A, 24-Apr-00  
www.vishay.com S FaxBack 408-970-5600  
3
SUD50P04-15  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
2.0  
1.5  
1.0  
0.5  
0
100  
10  
1
V
= 10 V  
= 30 A  
GS  
I
D
T = 150_C  
J
T = 25_C  
J
–50 –25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
J
– Junction Temperature (_C)  
– Source-to-Drain Voltage (V)  
SD  
THERMAL RATINGS  
Maximum Drain Current vs.  
Case Temperature  
Safe Operating Area  
500  
100  
60  
50  
40  
30  
20  
10  
0
10 ms  
Limited  
100 ms  
by r  
DS(on)  
1 ms  
10  
1
10 ms  
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
– Drain-to-Source Voltage (V)  
T
C
– Case Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
t
1
0.02  
t
2
t
t
1
1. Duty Cycle, D =  
2
0.05  
2. Per Unit Base = R  
= 40_C/W  
thJA  
(t)  
Single Pulse  
3. T – T = P  
Z
JM  
A
DM thJA  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
Square Wave Pulse Duration (sec)  
1
10  
30  
Document Number: 71176  
S-00830—Rev. A, 24-Apr-00  
www.vishay.com S FaxBack 408-970-5600  
4
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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