SUD50P06-15L [FREESCALE]
P-Channel 60 V (D-S) 175 °C MOSFET; P沟道60 V (D -S ), 175 ℃的MOSFET型号: | SUD50P06-15L |
厂家: | Freescale |
描述: | P-Channel 60 V (D-S) 175 °C MOSFET |
文件: | 总5页 (文件大小:398K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD50P06-15L
P-Channel
60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
VDS (V)
RDS(on) ()
ID (A)
175 °C Junction Temperature
- 50d
- 50
RoHS
0.015 at VGS = - 10 V
0.020 at VGS = - 4.5 V
- 60
COMPLIANT
Compliant to RoHS Directive 2002/95/EC
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
D
P-Channel MOSFET
Ordering Information: SUD50P06-15L-E3 (Lead-(Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 60
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 50d
- 39
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
ID
TC = 125 °C
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
- 80
- 50
125
EAR
L = 0.1 mH
TC = 25 °C
mJ
W
136c
3b, c
PD
Power Dissipation
TA = 25 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
Maximum
Unit
t 10 s
15
40
18
50
Junction-to-Ambientb
Steady State
°C/W
RthJC
Junction-to-Case
0.82
1.1
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
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1 / 5
SUD50P06-15L
P-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
- 60
- 1
V
- 3
100
- 1
VDS = 0 V, VGS
=
20 V
nA
VDS = - 48 V, VGS = 0 V
DS = - 48 V, VGS = 0 V, TJ = 125 °C
DS = - 48 V, VGS = 0 V, TJ = 175 °C
VDS = -5 V, VGS = - 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
- 50
- 150
µA
A
ID(on)
- 50
VGS = - 10 V, ID = - 17 A
0.012
61
0.015
0.025
0.030
0.020
V
V
GS = - 10 V, ID = - 50 A, TJ = 125 °C
GS = - 10 V, ID = - 50 A, TJ = 175 °C
Drain-Source On-State Resistancea
RDS(on)
V
GS = - 4.5 V, ID = - 14 A
Forward Transconductancea
Dynamicb
gfs
VDS = - 15 V, ID = - 17 A
S
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
4950
480
405
110
19
VGS = 0 V, VDS = - 25 V, f = 1 MHz
VDS = - 30 V, VGS = - 10 V, ID = - 50 A
pF
nC
165
Qgs
Qgd
td(on)
tr
28
15
23
70
105
260
260
V
DD = - 30 V, RL = 0.6
ns
Turn-Off Delay Timec
Fall Timec
ID - 50 A, VGEN = - 10 V, RG = 6
td(off)
tf
175
175
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
ISM
VSD
trr
Continuous Current
- 50
- 80
1.6
70
A
Pulsed Current
Forward Voltagea
Reverse Recovery Time
IF = - 50 A, VGS = 0 V
1.0
45
V
IF = - 50 A, dI/dt = 100 A/µs
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD50P06-15L
P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
V
= 10 V thru 4 V
GS
T
= 125 °C
3 V
C
25 °C
- 55 °C
3.0 3.5
0.0
0.5
1.0
V
1.5
2.0
2.5
4.0
0
1
2
3
4
5
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
0.025
0.020
0.015
0.010
0.005
0.000
25 °C
125 °C
T
= - 55 °C
C
V
GS
= 4.5 V
V
GS
= 10 V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
8
8000
7000
6000
5000
4000
3000
2000
1000
0
V
D
= 30 V
DS
= 50 A
I
C
iss
6
4
2
C
oss
C
rss
0
0
20
40
60
80
100
120
0
10
20
30
40
50
60
Q
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
g
Capacitance
Gate Charge
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SUD50P06-15L
P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
GS
= 17 A
I
T = 150 °C
J
T = 25 °C
J
10
1
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.3
V
0.6
0.9
1.2
1.5
- Source-to-Drain Voltage (V)
SD
T
- Junction Temperature (°C)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
100
60
50
40
30
20
10
0
I
Limited
DM
Limited by R
*
DS(on)
P(t) = 0.0001
I
D(on)
Limited
10
P(t) = 0.001
P(t) = 0.01
T
= 25 °C
Single Pulse
C
P(t) = 0.1
P(t) = 1
100
BVDSS Limited
10
1
0.1
1
0
25
50
75
100
125
150
175
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
T
- Case Temperature (°C)
GS
GS
C
Safe Operating Area
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
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SUD50P06-15L
P-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
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