SL03-GS08 [VISHAY]
Small Signal Schottky Diodes; 小信号肖特基二极管
| 型号： | SL03-GS08 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Diodes |
| 文件： | 总7页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SL02 / 03 / 04
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• For surface mounted applications
• Low-profile package
e3
• Ideal for automated placement
• Low power loss, high efficiency
17249
• High temperature soldering:
260 °C/10 seconds at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO-219AB (SMF) Plastic case
Polarity: Color band denotes cathode end
Weight: approx. 15 mg
Packaging codes-options:
G18 / 10 k per 13" reel (8 mm tape), 50 k/box
G08 / 3 k per 7" reel (8 mm tape), 30 k/box
Parts Table
Part
Ordering code
Marking
Remarks
Tape and Reel
SL02
SL03
SL04
SL02-GS18 or SL02-GS08
SL03-GS18 or SL03-GS08
SL04-GS18 or SL04-GS08
S2
S3
S4
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
VRRM
Value
20
Unit
V
Maximum repetitive peak
reverse voltage
SL02
SL03
SL04
SL02
SL03
SL04
VRRM
VRRM
VRMS
VRMS
VRMS
30
40
14
21
28
V
V
V
V
V
Maximum RMS voltage
Document Number 85687
Rev. 1.6, 13-Apr-05
www.vishay.com
1
SL02 / 03 / 04
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
VDC
Value
20
Unit
V
Maximum DC blocking voltage
SL02
SL03
SL04
VDC
VDC
30
40
V
V
A
Maximum average forward
rectified current
T
tp = 109 °C
IF(AV)
1.1
Peak forward surge current
8.3 ms single half sine-wave
IFSM
40
A
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
180
Unit
Thermal resistance junction to
ambient air2)
RthJA
K/W
Maximum operating junction
temperature
TJ
125
°C
°C
Storage temperature range
TSTG
- 55 to 150
2)Mounted on epoxy substrate with 3 x 3 mm Cu pads (≥ 40 μm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Instaneous forward voltage at
0.51)
Test condition
Part
Symbol
Min
Typ.
Max
Unit
V
SL02
VF
0.360
0.385
SL03
SL04
SL02
VF
VF
VF
0.395
0.450
0.420
0.43
0.51
V
V
V
Typical instantaneous forward
voltage
1.1 A
SL03
SL04
SL02
VF
VF
IR
0.450
0.530
V
V
Maximum DC reverse current at
rated DC blocking voltage
T
A = 25 °C
250
μA
TA = 100 °C
SL02
SL03
SL03
SL04
SL04
IR
IR
IR
IR
IR
8.0
130
6.0
20
mA
μA
T
T
T
T
A = 25 °C
A = 100 °C
A = 25 °C
A = 100 °C
mA
μA
6.0
mA
1) Pulse test: 300 μs pulse width, 1 % duty cycle
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2
Document Number 85687
Rev. 1.6, 13-Apr-05
SL02 / 03 / 04
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.5
10000
T
= 100°C
J
T
J
= 75°C
1000
1.0
T
J
= 50°C
100
10
1
T
J
= 25°C
0.5
0
0
5
10
15
20
25
0
10
30
50
70
90
110
130
150
17382
17379
Reverse Voltage (V)
Lead temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Current Characteristics - SL02
10
250
200
T
J
= 100°C
1
0.1
T
J
= 75°C
150
T
= 50°C
J
0.01
100
50
SL02
SL04
T
= 25°C
J
0.001
Pulse Width = 300μs
1% Duty Cycle
0.0001
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
0
2
4
6
8
10
12
17380
17383
Reverse Voltage (V)
Figure 2. Typical Junction Capacitance
Figure 5. Typical Instantaneous Forward Characteristics - SL03
10000
10
1
T
J
= 100°C
T
J
= 100°C
1000
100
T
J
= 75°C
T
= 75°C
J
0.1
T
= 50°C
J
T
J
= 50°C
0.01
10
1
T
5
= 25°C
J
T
= 25°C
J
0.001
Pulse Width = 300μs
1% Duty Cycle
0.0001
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
0
1.0
0
10
15
20
25
30
35
17384
17381
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characterisics - SL02
Figure 6. Typical Reverse Current Characteristics - SL03
Document Number 85687
Rev. 1.6, 13-Apr-05
www.vishay.com
3
SL02 / 03 / 04
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.85 (0.033)
0.35 (0.014)
3.9 (0.152)
3.5 (0.137)
5
0.16 (0.006)
0.99 (0.039)
0.97 (0.038)
Z
5
Cathode Band
Top View
Detail
Z
enlarged
1.9 (0.074)
1.7 (0.066)
1.2 (0.047)
0.8 (0.031)
0.10 max
2.9 (0.113)
2.7 (0.105)
ISO Method E
Mounting Pad Layout
1.6 (0.062)
1.3 (0.051)
1.4 (0.055)
17247
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Document Number 85687
Rev. 1.6, 13-Apr-05
4
SL02 / 03 / 04
Vishay Semiconductors
Blistertape for SMF
PS
18513
Document Number 85687
Rev. 1.6, 13-Apr-05
www.vishay.com
5
SL02 / 03 / 04
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 85687
Rev. 1.6, 13-Apr-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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