SL03/G18 [VISHAY]
DIODE 1.1 A, 30 V, SILICON, RECTIFIER DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Rectifier Diode;型号: | SL03/G18 |
厂家: | VISHAY |
描述: | DIODE 1.1 A, 30 V, SILICON, RECTIFIER DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Rectifier Diode |
文件: | 总5页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SL02 to SL04
Vishay Semiconductors
VISHAY
Small Surface Mount Schottky Diodes
Features
• For surface mounted applications
• Low-profile package
17249
• Ideal for automated placement
• Low power loss, high efficiency
• High temperature soldering:
260 °C/10 seconds at terminals
Packaging codes-options:
G18 / 10 k per 13" reel (8 mm tape), 50 k/box
G08 / 3 k per 7" reel (8 mm tape), 30 k/box
Mechanical Data
Case: JEDEC DO-219-AB (SMF) Plastic case
Polarity: Color band denotes cathode end
Weight: approx. 0.01g
Parts Table
Part
Marking
SL02
SL03
SL04
S2
S3
S4
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
Value
20
Unit
V
Maximum repetitive peak
reverse voltage
SL02
V
RRM
SL03
SL04
SL02
SL03
SL04
SL02
SL03
SL04
V
V
V
V
V
30
40
14
21
28
20
30
40
1.1
V
V
V
V
V
V
V
V
A
RRM
RRM
RMS
RMS
RMS
Maximum RMS voltage
Maximum DC blocking voltage
V
DC
DC
DC
V
V
Maximum average forward
rectified current
T
= 109 °C
I
F(AV)
tp
Peak forward surge current 8.3
ms single half sine-wave
I
40
A
FSM
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
R
180
K/W
θJA
2)
ambient air
Maximum operating junction
temperature
T
125
°C
°C
J
Storage temperature range
T
- 55 to 150
STG
2)
Mounted on epoxy substrate with 3 x 3mm Cu pads (≥ 40 µm thick)
Document Number 85687
Rev. 1.6, 21-Nov-03
www.vishay.com
1
SL02 to SL04
Vishay Semiconductors
VISHAY
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Instaneous forward voltage at
SL02
V
0.360
0.385
V
F
1)
0.5
SL03
SL04
SL02
V
V
V
0.395
0.450
0.420
0.43
0.51
V
V
V
F
F
F
Typical instantaneous forward
voltage
1.1 A
SL03
SL04
SL02
V
V
0.450
0.530
V
V
F
F
Maximum DC reverse current at T = 25 °C
I
250
µA
A
R
rated DC blocking voltage
T = 100 °C
SL02
SL03
SL03
SL04
SL04
I
I
I
I
I
8.0
130
6.0
20
mA
µA
A
R
R
R
R
R
T = 25 °C
A
T = 100 °C
mA
µA
A
T = 25 °C
A
T = 100 °C
6.0
mA
A
1)
Pulse test: 300 µs pulse width, 1 % duty cycle
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.5
250
200
1.0
150
100
50
SL02
SL04
0.5
0
10
0
2
4
6
8
10
12
0
10
30
50
70
90
110
130
150
17380
17379
Reverse Voltage (V)
Lead temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Typical Junction Capacitance
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Document Number 85687
Rev. 1.6, 21-Nov-03
SL02 to SL04
Vishay Semiconductors
VISHAY
10000
10
T
J
= 100°C
T
= 100°C
J
1
0.1
1000
100
T
= 75°C
J
T
= 75°C
J
T
= 50°C
J
T
J
= 50°C
0.01
10
1
T
5
= 25°C
J
T
= 25°C
J
0.001
Pulse Width = 300µs
1% Duty Cycle
0.0001
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
0
1.0
0
10
15
20
25
30
35
17384
17381
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characterisics - SL02
Figure 6. Typical Reverse Current Characteristics - SL03
10000
T
= 100°C
J
T
= 75°C
J
1000
100
10
T
= 50°C
J
T
= 25°C
J
1
0
5
10
15
20
25
17382
Reverse Voltage (V)
Figure 4. Typical Reverse Current Characteristics - SL02
10
T
J
= 100°C
1
0.1
T
J
= 75°C
T
= 50°C
J
0.01
T
= 25°C
J
0.001
Pulse Width = 300µs
1% Duty Cycle
0.0001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
17383
Figure 5. Typical Instantaneous Forward Characteristics - SL03
Document Number 85687
Rev. 1.6, 21-Nov-03
www.vishay.com
3
SL02 to SL04
Vishay Semiconductors
VISHAY
Package Dimensions in mm
Cathode Band
T op View
1.8 0.1
1.0 0.2
2.8
0.1
5
0.05 - 0.30
0.98 0.1
5
Z
0.60 0.25
Detail
Z
enlarged
0.00 - 0.10
3.7 0.2
17247
Mounting Pad Layout
1.3
1.6
1.4
17248
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Document Number 85687
Rev. 1.6, 21-Nov-03
SL02 to SL04
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85687
Rev. 1.6, 21-Nov-03
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5
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