SL03/G18 [VISHAY]

DIODE 1.1 A, 30 V, SILICON, RECTIFIER DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Rectifier Diode;
SL03/G18
型号: SL03/G18
厂家: VISHAY    VISHAY
描述:

DIODE 1.1 A, 30 V, SILICON, RECTIFIER DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Rectifier Diode

文件: 总5页 (文件大小:95K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SL02 to SL04  
Vishay Semiconductors  
VISHAY  
Small Surface Mount Schottky Diodes  
Features  
• For surface mounted applications  
• Low-profile package  
17249  
• Ideal for automated placement  
• Low power loss, high efficiency  
• High temperature soldering:  
260 °C/10 seconds at terminals  
Packaging codes-options:  
G18 / 10 k per 13" reel (8 mm tape), 50 k/box  
G08 / 3 k per 7" reel (8 mm tape), 30 k/box  
Mechanical Data  
Case: JEDEC DO-219-AB (SMF) Plastic case  
Polarity: Color band denotes cathode end  
Weight: approx. 0.01g  
Parts Table  
Part  
Marking  
SL02  
SL03  
SL04  
S2  
S3  
S4  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
Value  
20  
Unit  
V
Maximum repetitive peak  
reverse voltage  
SL02  
V
RRM  
SL03  
SL04  
SL02  
SL03  
SL04  
SL02  
SL03  
SL04  
V
V
V
V
V
30  
40  
14  
21  
28  
20  
30  
40  
1.1  
V
V
V
V
V
V
V
V
A
RRM  
RRM  
RMS  
RMS  
RMS  
Maximum RMS voltage  
Maximum DC blocking voltage  
V
DC  
DC  
DC  
V
V
Maximum average forward  
rectified current  
T
= 109 °C  
I
F(AV)  
tp  
Peak forward surge current 8.3  
ms single half sine-wave  
I
40  
A
FSM  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Thermal resistance junction to  
R
180  
K/W  
θJA  
2)  
ambient air  
Maximum operating junction  
temperature  
T
125  
°C  
°C  
J
Storage temperature range  
T
- 55 to 150  
STG  
2)  
Mounted on epoxy substrate with 3 x 3mm Cu pads (40 µm thick)  
Document Number 85687  
Rev. 1.6, 21-Nov-03  
www.vishay.com  
1
SL02 to SL04  
Vishay Semiconductors  
VISHAY  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ.  
Max  
Unit  
Instaneous forward voltage at  
SL02  
V
0.360  
0.385  
V
F
1)  
0.5  
SL03  
SL04  
SL02  
V
V
V
0.395  
0.450  
0.420  
0.43  
0.51  
V
V
V
F
F
F
Typical instantaneous forward  
voltage  
1.1 A  
SL03  
SL04  
SL02  
V
V
0.450  
0.530  
V
V
F
F
Maximum DC reverse current at T = 25 °C  
I
250  
µA  
A
R
rated DC blocking voltage  
T = 100 °C  
SL02  
SL03  
SL03  
SL04  
SL04  
I
I
I
I
I
8.0  
130  
6.0  
20  
mA  
µA  
A
R
R
R
R
R
T = 25 °C  
A
T = 100 °C  
mA  
µA  
A
T = 25 °C  
A
T = 100 °C  
6.0  
mA  
A
1)  
Pulse test: 300 µs pulse width, 1 % duty cycle  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1.5  
250  
200  
1.0  
150  
100  
50  
SL02  
SL04  
0.5  
0
10  
0
2
4
6
8
10  
12  
0
10  
30  
50  
70  
90  
110  
130  
150  
17380  
17379  
Reverse Voltage (V)  
Lead temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Typical Junction Capacitance  
www.vishay.com  
2
Document Number 85687  
Rev. 1.6, 21-Nov-03  
SL02 to SL04  
Vishay Semiconductors  
VISHAY  
10000  
10  
T
J
= 100°C  
T
= 100°C  
J
1
0.1  
1000  
100  
T
= 75°C  
J
T
= 75°C  
J
T
= 50°C  
J
T
J
= 50°C  
0.01  
10  
1
T
5
= 25°C  
J
T
= 25°C  
J
0.001  
Pulse Width = 300µs  
1% Duty Cycle  
0.0001  
0.1  
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Instantaneous Forward Voltage (V)  
0
1.0  
0
10  
15  
20  
25  
30  
35  
17384  
17381  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characterisics - SL02  
Figure 6. Typical Reverse Current Characteristics - SL03  
10000  
T
= 100°C  
J
T
= 75°C  
J
1000  
100  
10  
T
= 50°C  
J
T
= 25°C  
J
1
0
5
10  
15  
20  
25  
17382  
Reverse Voltage (V)  
Figure 4. Typical Reverse Current Characteristics - SL02  
10  
T
J
= 100°C  
1
0.1  
T
J
= 75°C  
T
= 50°C  
J
0.01  
T
= 25°C  
J
0.001  
Pulse Width = 300µs  
1% Duty Cycle  
0.0001  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
Instantaneous Forward Voltage (V)  
17383  
Figure 5. Typical Instantaneous Forward Characteristics - SL03  
Document Number 85687  
Rev. 1.6, 21-Nov-03  
www.vishay.com  
3
SL02 to SL04  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm  
Cathode Band  
T op View  
1.8 0.1  
1.0 0.2  
2.8  
0.1  
5
0.05 - 0.30  
0.98 0.1  
5
Z
0.60 0.25  
Detail  
Z
enlarged  
0.00 - 0.10  
3.7 0.2  
17247  
Mounting Pad Layout  
1.3  
1.6  
1.4  
17248  
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4
Document Number 85687  
Rev. 1.6, 21-Nov-03  
SL02 to SL04  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85687  
Rev. 1.6, 21-Nov-03  
www.vishay.com  
5

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