SL03/G2 [VISHAY]
Rectifier Diode,;SL02 thru SL04
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Surface Mount Schottky Rectifier
Forward Current 20 to 40A
Reverse Voltage 1.1V
DO-219AB (SMF)
Cathode Band
Top View
1.8 ± 0.1
1.0 ± 0.2
Dimensions in
millimeters
2.8 ± 0.1
Mounting Pad Layout
5°
0.98 ± 0.1
5°
1.2
0.05 - 0.30
1.6
1.2
Z
0.60 ± 0.25
Detail Z
enlarged
0.00 – 0.10
3.7 ± 0.2
Features
Mechanical Data
• For surface mounted applications
• Low-profile package
Case: Low-profile plastic case
Polarity: Color band denotes cathode end
Weight: approx. 0.01g
• Ideal for automated placement
• Low power loss, high efficiency
• High temperature soldering:
250°C/10 seconds at terminals
Packaging codes-options:
G1-10K per 13” reel (8mm tape), 50K/box
G2-3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
SL02
SL03
SL04
Unit
Device marking code
S2
S3
S4
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
30
40
V
V
V
A
14
21
28
Maximum DC blocking voltage
Maximum average forward rectified current, TL = 109°C
20
30
40
IF(AV)
1.1
Peak forward surge current
8.3ms single half sine-wave
IFSM
RθJA
40
A
Typical thermal resistance (on ceramic substrate)
(on epoxy substrate)
55
°C/W
188(2)
Maximum Operating junction temperature
Storage Temperature Range
TJ
125
°C
°C
TS
-55 to 150
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
SL02
SL03
SL04
Unit
V
Instantaneous forward voltage at 0.5A(1)
Typical
Maximum
0.360
0.385
0.395
0.43
0.450
0.51
VF
VF
IR
Typical instantaneous forward voltage at 1.1A
0.420
0.450
0.500
V
Maximum DC reverse current
at Rated DC blocking voltage
TA = 25°C
TA = 100°C
250
8.0
130
6.0
20
6.0
µA
mA
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Mounted on epoxy substrate with 3 x 3mm Cu pads (≥ 40µm thick)
Document Number 88739
11-Feb-02
www.vishay.com
1
SL02 thru SL04
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Typical Junction Capacitance
250
1.5
1.0
200
150
100
50
SL02
SL04
0.5
0
10
0
10
30
50
70
90
110
130
150
0
2
4
6
8
10
12
Reverse Voltage (V)
Fig. 4 – Typical Reverse Current
Characteristics – SL02
Fig. 3 – Typical Instantaneous
Forward Characteristics – SL02
10000
1000
10
T
= 100°C
J
T
= 100°C
J
T
= 75°C
J
1
T
= 75°C
J
T
= 50°C
J
0.1
100
10
T
= 50°C
J
T
= 25°C
J
0.01
T
= 25°C
J
0.001
Pulse Width = 300µs
1% Duty Cycle
1
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
0
1.0
0
5
10
15
20
25
Reverse Voltage (V)
Fig. 6 – Typical Reverse Current
Characteristics – SL03
Fig. 5 – Typical Instantaneous
Forward Characteristics – SL03
10000
10
1
T
= 100°C
J
T
= 100°C
J
1000
100
T
= 75°C
J
T
= 75°C
J
0.1
T
= 50°C
J
T
= 50°C
J
0.01
10
1
T
5
= 25°C
J
T
= 25°C
J
0.001
Pulse Width = 300µs
1% Duty Cycle
0.0001
0.1
0
10
15
20
25
30
35
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
www.vishay.com
2
Document Number 88739
11-Feb-02
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