SIA400EDJ [VISHAY]
N-Channel 30 V (D-S) MOSFET; N沟道30 V （D -S ）的MOSFET
| 型号： | SIA400EDJ |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30 V (D-S) MOSFET |
| 文件： | 总9页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiA400EDJ
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) ()
Qg (Typ.)
I
D (A)a
12
•
•
TrenchFET® Power MOSFET
New Thermally Enhanced PowerPAK®
RoHS
0.019 at VGS = 4.5 V
0.025 at VGS = 2.5 V
COMPLIANT
30
11.6
12
SC-70 Package
- Small Footprint Area
•
•
Typical ESD Performance 2500 V HBM
100 % Rg and UIS Tested
PowerPAK SC-70-6L-Single
•
Compliant to RoHS Directive 2002/95/EC
1
D
APPLICATIONS
2
•
•
•
Load Switch, OVP Switch
Boost Converters
DC/DC Converters
D
3
G
D
6
D
S
D
5
Marking Code
2.05 mm
S
2.05 mm
G
4
A I X
Part # code
X X X
Lot Traceability
and Date code
Ordering Information:
SiA400EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
12
12a
TC = 25 °C
C = 70 °C
TA = 25 °C
TA = 70 °C
12a
T
Continuous Drain Current (TJ = 150 °C)
ID
11b, c
8.8b, c
30
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
12a
2.9b, c
15
11.25
19.2
12.3
3.5b, c
2.2b, c
- 55 to 150
260
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
EAS
Avalanche Current
Single Pulse Avalanche
L = 0.1 mH
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
28
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 5 s
Steady State
36
°C/W
5.3
6.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67844
S11-1148-Rev. A, 13-Jun-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA400EDJ
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
34
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 3.8
VDS = VGS , ID = 250 µA
0.6
20
1.5
15
1
V
IGSS
VDS = 0 V, VGS
=
12 V
µA
VDS = 30 V, VGS = 0 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
DS = 30 V, VGS = 0 V, TJ = 55 °C
10
V
DS 5 V, VGS = 10 V
GS 4.5 V, ID = 11 A
GS 2.5 V, ID = 9.6 A
V
0.016
0.019
50
0.019
0.025
Drain-Source On-State Resistancea
Forward Transconductancea
S
V
VDS = 10 V, ID = 11 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1265
132
80
24
11.6
2.9
2.2
3.3
10
23
26
9
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 15 V, VGS = 10 V, ID = 10 A
36
Qg
Total Gate Charge
17.4
nC
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
0.6
6.6
15
35
39
18
8
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
V
DD = 15 V, RL = 1.7
I
D 8.8 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
4
Rise Time
14
25
9
21
38
18
V
DD = 15 V, RL = 1.7
I
D 8.8 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
12
30
1.2
23
14
A
IS = 8.8 A, VGS 0 V
0.8
15
7
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
IF = 8.8 A, dI/dt = 100 A/µs, TJ = 25 °C
9
ns
tb
6
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67844
S11-1148-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA400EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-02
0.020
TJ = 25 °C
10-04
0.015
TJ = 150 °C
10-06
0.010
TJ = 25 °C
10-08
0.005
10-10
0.000
0
3
6
9
12
15
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
30
24
18
12
6
10
8
VGS = 5 V thru 2.5 V
VGS = 2 V
6
TC = 25 °C
4
2
TC = 125 °C
VGS = 1.5 V
TC = - 55 °C
1.5 2
0
0
0
0.5
1
1.5
2
0
0.5
1
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
1200
900
600
300
0
0.030
0.024
0.018
0.012
0.006
Ciss
VGS = 2.5 V
VGS = 4.5 V
Coss
Crss
0
5
10
15
20
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Document Number: 67844
S11-1148-Rev. A, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA400EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
8
1.8
1.5
1.2
0.9
0.6
ID = 11 A
VGS = 4.5 V
ID = 11 A
VDS = 15 V
VGS = 2.5 V
6
VDS = 7.5 V
4
VDS = 24 V
2
0
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
10
0.030
0.024
0.018
0.012
0.006
ID = 11 A
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
1.2
1
0.8
0.6
0.4
ID = 250 μA
0
0.001
0.01
0.1
1
10
100
1000
- 50 - 25
0
25
50
75
100 125 150
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
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Document Number: 67844
S11-1148-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA400EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
28
21
14
7
Limited by RDS(on)
*
10
100 μs
1 ms
1
Package Limited
10 ms
100 ms
1 s, 10 s
0.1
0.01
DC
BVDSS Limited
10
TC = 25 °C
Single Pulse
0
0.1
1
100
0
25
50
75
100
125
150
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
TC - Case Temperature (°C)
Safe Operating Area, Junction-to-Ambient
Current Derating**
2.0
1.5
1.0
0.5
0.0
25
20
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
Power, Junction-to-Case
** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67844
S11-1148-Rev. A, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA400EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67844.
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Document Number: 67844
S11-1148-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
®
PowerPAK SC70-6L
b
e
b
e
PIN1
PIN2
PIN3
PIN1
PIN2
PIN3
D1
D1
D2
D1
PIN4
K2
PIN6
PIN5
K1
PIN4
PIN6
K3
PIN5
K2
K1
K2
BACKSIDE VIEW OF SINGLE
BACKSIDE VIEW OF DUAL
D
A
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DUAL PAD
DIM
MILLIMETERS
Nom
INCHES
MILLIMETERS
INCHES
Nom
0.030
-
Min
0.675
0
Max
0.80
0.05
0.38
0.25
2.15
1.05
0.335
2.15
1.60
0.445
0.525
Min
0.027
0
Nom
0.030
Max
Min
Nom
0.75
-
Max
0.80
0.05
0.38
0.25
2.15
0.713
Min
0.027
0
Max
A
A1
b
0.75
0.032
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
0.675
0
0.032
0.002
0.015
0.010
0.085
0.028
-
-
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
0.30
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
0.012
0.23
0.15
1.98
0.513
0.30
0.20
2.05
0.613
0.009
0.006
0.078
0.020
0.012
0.008
0.081
0.024
C
0.20
0.008
D
2.05
0.081
D1
D2
E
0.95
0.037
0.235
0.009
2.05
0.081
1.98
0.85
2.05
0.95
2.15
1.05
0.078
0.033
0.081
0.037
0.085
0.041
E1
E2
E3
e
1.50
0.059
0.395
0.016
0.475
0.019
0.65 BSC
0.275 TYP
0.400 TYP
0.240 TYP
0.225 TYP
0.355 TYP
0.275
0.026 BSC
0.011 TYP
0.016 TYP
0.009 TYP
0.009 TYP
0.014 TYP
0.011
0.65 BSC
0.275 TYP
0.320 TYP
0.252 TYP
0.026 BSC
0.011 TYP
0.013 TYP
0.010 TYP
K
K1
K2
K3
K4
L
0.175
0.375
0.007
0.015
0.175
0.05
0.275
0.10
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
T
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
0.235 (0.009)
(0.059)
0.870 (0.034)
0.355 (0.014)
2.200 (0.087)
1.500
0.350 (0.014)
0.300 (0.012)
1
0.650 (0.026)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
Document Number: 70486
Revision: 21-Jan-08
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11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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