SI4864DY [VISHAY]
N-Channel 20-V (D-S) MOSFET; N通道20 -V （D -S ）的MOSFET
| 型号： | SI4864DY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4864DY
Vishay Siliconix
New Product
N-Channel 20-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS: 2.5-V Rated
D Low 3.5-mW rDS(on)
PRODUCT SUMMARY
D PWM (Qgd and RG) Optimized
APPLICATIONS
VDS (V)
rDS(on) (W)
ID (A)
0.0035 @ V = 4.5 V
25
20
GS
20
D Low-Side MOSFET in Synchronous Buck
0.0047 @ V = 2.5 V
GS
DC/DC Converters in Servers and Routers
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
"8
T
= 25_C
= 70_C
25
20
17
13
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
2.9
3.5
2.2
1.3
1.6
1
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
29
67
13
35
80
16
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71449
S-03662—Rev. B, 14-Apr-03
www.vishay.com
1
Si4864DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS
D
I
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= 16 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 16 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
30
A
V
DS
w 5 V, V = 4.5 V
GS
D(on)
0.0028
0.0035
0.0047
V
= 4.5 V, I = 25 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 20 A
0.0038
70
GS
D
a
Forward Transconductance
g
fs
V
= 6 V, I = 25 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
= 2.9 A, V = 0 V
0.70
1.1
70
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
47
10
Q
gs
Q
gd
V
= 10 V, V = 4.5 V, I = 25 A
nC
DS
GS
D
13.4
1.5
40
R
g
0.5
2.6
60
W
t
t
d(on)
t
r
44
65
V
= 10 V, R = 10 W
L
= 4.5 V, R = 6 W
GEN G
DD
ns
ns
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
150
72
240
110
80
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 2.9 A, di/dt = 100 A/ms
57
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
GS
= 5 thru 2.5 V
2 V
50
40
30
20
10
0
T
C
= 125_C
25_C
-55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71449
S-03662—Rev. B, 14-Apr-03
www.vishay.com
2
Si4864DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.005
7500
6000
4500
3000
1500
0
V
= 2.5 V
= 4.5 V
GS
0.004
0.003
0.002
0.001
0.000
C
iss
V
GS
C
oss
C
rss
0
10
20
D
30
40
50
60
0
4
8
12
16
20
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 25 A
V
GS
= 4.5 V
DS
I
D
I = 25 A
D
0
12
Q
24
36
48
60
-50
-25
0
25
50
75
100 125 150
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.010
0.008
0.006
0.004
0.002
0.000
60
10
T
J
= 150_C
I
D
= 25 A
T
J
= 25_C
1
0
1
2
3
4
5
6
7
8
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71449
S-03662—Rev. B, 14-Apr-03
www.vishay.com
3
Si4864DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
50
0.2
I
D
= 250 mA
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
40
30
20
10
0
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 67_C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71449
S-03662—Rev. B, 14-Apr-03
www.vishay.com
4
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