SB3H100-HE3/54 [VISHAY]

3A, 100V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;
SB3H100-HE3/54
型号: SB3H100-HE3/54
厂家: VISHAY    VISHAY
描述:

3A, 100V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

功效 瞄准线 二极管
文件: 总4页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SB3H90 & SB3H100  
Vishay General Semiconductor  
New Product  
High-Voltage Schottky Rectifier  
High Barrier Technology for improved high temperature performance  
FEATURES  
• Guardring for overvoltage protection  
• Low power losses and high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
DO-201AD  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in middle voltage high frequency  
inverters, freewheeling, dc-to-dc converters, and  
polarity protection applications.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
3.0 A  
90 V, 100 V  
100 A  
MECHANICAL DATA  
Case: DO-201AD  
Epoxy meets UL 94V-0 flammability rating  
0.65 V  
IR  
20 µA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
175 °C  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRWM  
VDC  
SB3H90  
SB3H100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working reverse voltage  
Maximum DC blocking voltage  
90  
90  
90  
V
V
V
A
100  
100  
Maximum average forward rectified current at TL = 90 °C  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz  
Critical rate of rise of reverse voltage  
IRRM  
dv/dt  
TSTG  
TJ  
1.0  
A
V/µs  
°C  
10000  
Storage temperature range  
- 55 to + 175  
175  
Maximum operating junction temperature  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
SB3H90  
SB3H100  
UNIT  
Maximum instantaneous forward  
voltage at: (1)  
IF = 3.0 A, TJ = 25 °C  
IF = 3.0 A, TJ = 125 °C  
0.80  
0.65  
VF  
V
20  
4.0  
Maximum DC reverse current at  
rated DC blocking voltage  
TJ = 25 °C  
TJ = 125 °C  
µA  
mA  
IR  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number 88720  
18-May-06  
www.vishay.com  
1
SB3H90 & SB3H100  
Vishay General Semiconductor  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SB3H90  
SB3H100  
UNIT  
RθJA  
RθJL  
50  
20  
Maximum thermal resistance (1)  
°C/W  
Note:  
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas  
ORDERING INFORMATION  
PREFERRED P/N  
SB3H100-E3/54  
SB3H100-E3/73  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
1.09  
1.09  
54  
73  
1400  
1000  
13" Diameter Paper Tape & Reel  
Ammo Pack Packaging  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
4.0  
100  
10  
Resistive or Inductive Load  
0.375" (9.5 mm) lead length  
TJ = 175 °C  
3.0  
TJ = 150 °C  
1
2.0  
1.0  
0
TJ = 125 °C  
TJ = 100 °C  
0.1  
TJ  
= 25 °C  
Pulse Width = 300 µs  
1 % Duty Cycle  
0.01  
0
25  
50  
75  
100  
125  
150  
175  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Lead Temperature (°C)  
Instantaneous Forward Voltage (V)  
Figure 1. Forward Current Derating Curve  
Figure 3. Typical Instantaneous Forward Characteristics  
1000  
100  
80  
60  
40  
20  
10  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
TJ = 150 °C  
100  
10  
TJ = 125 °C  
TJ = 100 °C  
1
TJ  
= 25 °C  
0.1  
0.01  
1
10  
100  
20  
40  
60  
80  
100  
Number of Cycles at 60 Hz  
Percent of Rated Peak Reverse Voltage (%)  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
Figure 4. Typical Reverse Characteristics  
www.vishay.com  
2
Document Number 88720  
18-May-06  
SB3H90 & SB3H100  
Vishay General Semiconductor  
100  
10  
1
1000  
100  
10  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
0.1  
0.1  
1
10  
100  
0
0.1  
1
10  
100  
Reverse Voltage (V)  
t - Pulse Duration (sec.)  
Figure 5. Typical Junction Capacitance  
Figure 6. Typical Transient Thermal Impedance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
MIN.  
0.210 (5.3)  
0.190 (4.8)  
DIA.  
0.375 (9.5)  
0.285 (7.2  
1.0 (25.4)  
MIN.  
0.052 (1.32)  
0.048 (1.22)  
DIA.  
Document Number 88720  
18-May-06  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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