SB3H100HE3 [VISHAY]
DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode;
| 型号： | SB3H100HE3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode 功效 瞄准线 二极管 |
| 文件： | 总4页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB3H90 & SB3H100
New Product
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for improved
high temperature performance
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF
3.0 A
90 V, 100 V
100 A
0.65 V
DO-201AD
IR
20 µA
Tj max.
175 °C
Features
Mechanical Data
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
Case: DO-201AD
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
• High forward surge capability
• High frequency operation
Polarity: Color band denotes the cathode end
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in middle voltage high frequency inverters,
free wheeling, dc-to-dc converters, and polarity pro-
tection applications
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
VRRM
SB3H90
90
SB3H100
100
Unit
V
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
VRWM
VDC
90
90
100
100
V
V
A
A
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 90 °C
IF(AV)
IFSM
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
100
Peak repetitive reverse surge current at tp = 2.0 µs, 1 KHz
IRRM
1.0
A
Critical rate of rise of reverse voltage
Storage temperature range
dv/dt
TSTG
10000
V/µs
°C
- 55 to + 175
175
Maximum operating junction temperature
TJ
°C
Document Number 88720
28-Jun-05
www.vishay.com
1
SB3H90 & SB3H100
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Maximum instantaneous forward
voltage at: (1)
Test condition
Symbol
VF
SB3H90
SB3H100
Unit
V
IF = 3.0 A, TJ = 25 °C
IF = 3.0 A, TJ = 125 °C
0.80
0.65
Maximum DC reverse current at
rated DC blocking voltage
TJ = 25 °C
IR
20
4.0
µA
mA
TJ = 125 °C
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Maximum thermal resistance(1)
Symbol
RθJA
RθJL
SB3H90
SB3H100
Unit
50
20
°C/W
Notes:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
100
4.0
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
0.375” (9.5 mm) lead length
80
60
40
20
10
3.0
2.0
1.0
0
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88720
28-Jun-05
SB3H90 & SB3H100
Vishay General Semiconductor
1000
100
10
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
10
1
1000
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0.1
0
0.1
1
10
100
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88720
28-Jun-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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