SB3H90 [VISHAY]
High Voltage Schottky Rectifier; 高压肖特基整流器
| 型号： | SB3H90 |
| 厂家： | 
VISHAY |
| 描述： | High Voltage Schottky Rectifier |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SB3H90 and SB3H100
New Product
Vishay Semiconductors
formerly General Semiconductor
High Voltage Schottky Rectifier
DO-201AD
Reverse Voltage 90 to 100V
Forward Current 3.0A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
• Low power loss, high efficiency
• For use in low voltage high frequency inverters,
free wheeling, and polarity protection applications
0.375 (9.5)
0.285 (7.2)
• Guardring for overvoltage protection
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per
1.0 (25.4)
Min.
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
0.052 (1.32)
0.048 (1.22)
Dia.
Weight: 0.04 oz., 1.12g
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
VRWM
VDC
SB3H90
SB3H100
Unit
V
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum DC blocking voltage
90
100
90
90
V
90
100
V
Maximum average forward rectified current at TL = 90°C
IF(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ
IRRM
dv/dt
1.0
A
Critical rate of rise of reverse voltage
10,000
V/µs
RθJA
RθJL
30
10
Maximum thermal resistance(2)
°C/W
Storage temperature range
TSTG
TJ
–55 to +175
+175
°C
°C
Maximum operating junction temperature
Electrical Characteristics (TA = 25°C unless otherwise noted)
Maximum instantaneous
IF = 3.0A, TJ = 25°C
IF = 3.0A, TJ = 125°C
0.80
0.65
VF
V
forward voltage at: (1)
Maximum DC reverse current
at rated DC blocking voltage
TJ = 25°C
TJ = 125°C
20
4
µA
mA
IR
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Document Number 88720
1-Jul-02
www.vishay.com
1
SB3H90 and SB3H100
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 -- Forward Current
Fig. 2 -- Maximum Non-repetitive Peak
Forward Surge Current
Derating Curve
4.0
100
80
T = T max.
Resistive or Inductive Load
0.375" (9.5mm) lead length
J
J
8.3ms single half sine-wave
(JEDEC Method)
3.0
2.0
60
40
20
10
1.0
0
0
25
50
75
100
125
150
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 -- Typical Instantaneous Forward
Characteristics
Fig. 4 -- Typical Reverse
Characteristics
100
10
1000
100
10
T = 175°C
J
T = 150°C
J
T = 125°C
J
T = 150°C
J
1
T = 100°C
J
T = 100°C
J
T = 125°C
J
1
0.1
T = 25°C
J
T = 25°C
J
0.1
Pulse Width = 300 s
1% Duty Cycle
0.01
0.01
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 - Typical Transient
Thermal Impedance
Fig. 5 -- Typical Junction
Capacitance
1,000
100
10
T = 25°C
J
f = 1.0 MHz
Vsig = 50mVp-p
100
1
10
0.1
0.1
1
10
100
0
0.1
1
10
100
t, Pulse Duration (sec.)
Reverse Voltage (V)
www.vishay.com
2
Document Number 88720
1-Jul-02
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