SB3H90_08 [VISHAY]
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance; 高压肖特基整流器高阻隔技术改进高温性能
| 型号： | SB3H90_08 |
| 厂家： | 
VISHAY |
| 描述： | High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance |
| 文件： | 总4页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SB3H90 & SB3H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-201AD
TYPICAL APPLICATIONS
For use in middle voltage high frequency
inverters, freewheeling, dc-to-dc converters, and
polarity protection applications.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
IF(AV)
3.0 A
VRRM
IFSM
VF
90 V, 100 V
100 A
0.65 V
IR
20 µA
TJ max.
175 °C
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SB3H90
90
SB3H100
100
UNIT
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
V
V
V
A
90
100
90
100
Maximum average forward rectified current at TL = 90 °C
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz
Critical rate of rise of reverse voltage
IRRM
dV/dt
TSTG
TJ
1.0
A
V/µs
°C
10 000
Storage temperature range
- 55 to + 175
175
Maximum operating junction temperature
°C
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
SB3H90
SB3H100
UNIT
Maximum instantaneous forward
voltage
IF = 3.0 A
IF = 3.0 A
TJ = 25 °C
TJ = 125 °C
0.80
0.65
VF
V
(1)
20
4.0
Maximum reverse current
at rated VR
TJ = 25 °C
TJ = 125 °C
µA
mA
IR
(2)
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Document Number: 88720
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
SB3H90 & SB3H100
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SB3H90
SB3H100
UNIT
RθJA
RθJL
50
20
Maximum thermal resistance (1)
°C/W
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SB3H100-E3/54
1.09
1.09
1.09
1.09
54
73
54
73
1400
1000
1400
1000
13" diameter paper tape and reel
Ammo pack packaging
SB3H100-E3/73
SB3H100HE3/54 (1)
SB3H100HE3/73 (1)
13" diameter paper tape and reel
Ammo pack packaging
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
4.0
100
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TJ = 175 °C
3.0
2.0
1.0
0
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
T
J = 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
Lead Temperature (°C)
Instantaneous Forward Voltage (V)
Figure 1. Forward Current Derating Curve
Figure 3. Typical Instantaneous Forward Characteristics
100
80
60
40
20
10
1000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
0.1
T
J = 25 °C
0.01
1
10
100
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88720
Revision: 19-May-08
New Product
SB3H90 & SB3H100
Vishay General Semiconductor
1000
100
10
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.1
1
10
100
0
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88720
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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