NSB8MT-E3/45 [VISHAY]
DIODE GEN PURP 1KV 8A TO263AB;
| 型号： | NSB8MT-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE GEN PURP 1KV 8A TO263AB |
| 文件： | 总5页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
Glass Passivated General Purpose Plastic Rectifier
FEATURES
TO-220AC
ITO-220AC
• Power pack
• Glass passivated chip junction
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package)
2
2
1
1
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AC and ITO-220AC package)
NS8xT
PIN 1
NSF8xT
PIN 1
CASE
• AEC-Q101 qualified
PIN 2
PIN 2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
2
1
NSB8xT
PIN 1
K
MECHANICAL DATA
PIN 2
HEATSINK
Case: TO-220AC, ITO-220AC, TO-263AB
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commerical grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
IF(AV)
8.0 A
VRRM
IFSM
50 V to 1000 V
125 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
VF
1.1 V
meets JESD 201 class 2 whisker test
TJ max.
150 °C
Polarity: As marked
TO-220AC, ITO-220AC,
TO-263AB
Package
Mounting Torque: 10 in-lbs maximum
Diode variation
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
at TC = 100 °C
IF(AV)
8.0
A
Peak forward surge current 8.3 ms single sine-wave
IFSM
TJ, TSTG
VAC
125
- 55 to + 150
1500
A
°C
V
superimposed on rated load
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
Revision: 20-Jan-14
Document Number: 88690
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT
Maximum
instantaneous
forward voltage
(1)
8.0 A
TJ = 25 °C
VF
1.1
V
Maximum DC
reverse current
at rated DC
TJ = 25 °C
10
IR
μA
pF
TJ = 100 °C
100
blocking voltage
Typical junction
capacitance
4.0 V, 1 MHz
CJ
55
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
NSXT
NSFXT
NSBXT
UNIT
Typical thermal resistance from junction to case
RJC
3.0
5.0
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
NS8JT-E3/45
1.80
1.95
1.77
1.77
1.80
1.95
1.77
1.77
45
45
45
81
45
45
45
81
NSF8JT-E3/45
50/tube
Tube
NSB8JT-E3/45
50/tube
Tube
NSB8JT-E3/81
800/reel
Tape and reel
Tube
NS8JTHE3/45 (1)
NSF8JTHE3/45 (1)
NSB8JTHE3/45 (1)
NSB8JTHE3/81 (1)
50/tube
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 20-Jan-14
Document Number: 88690
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
100
60 Hz Resistive or Inductive Load
8
TJ = 100 °C
TJ = 75 °C
10
6
4
1
2
TJ = 25 °C
60
0
0.1
50
100
150
0
0
20
40
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
175
150
125
100
75
120
100
80
60
40
20
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
1.0 Cycle
50
25
0
1
10
100
0.1
1
10
100
1000
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance Per Leg
100
Pulse Width = 300 μs
1 % Duty Cycle
10
1
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 20-Jan-14
Document Number: 88690
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
ITO-220AC
0.404 (10.26)
0.190 (4.83)
0.384 (9.75)
0.170 (4.32)
0.415 (10.54) MAX.
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.185 (4.70)
0.076 (1.93) REF.
0.110 (2.79)
0.370 (9.40)
0.360 (9.14)
0.175 (4.44)
0.055 (1.39)
0.100 (2.54)
7° REF.
0.113 (2.87)
0.103 (2.62)
0.076 (1.93) REF.
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
PIN
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1
2
PIN
1.148 (29.16)
1.118 (28.40)
1
2
7° REF.
0.191 (4.85)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.057 (1.45)
0.045 (1.14)
PIN 1
PIN 2
0.045 (1.14)
0.530 (13.46)
CASE
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.025 (0.64)
0.015 (0.38)
0.022 (0.56)
0.014 (0.36)
0.028 (0.71)
0.020 (0.51)
0.205 (5.20)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
1
K
2
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 20-Jan-14
Document Number: 88690
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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