NSB9435T1/D [ONSEMI]
High Current Bias Resistor Transistor ; 高电流偏置电阻晶体管\n
| 型号： | NSB9435T1/D |
| 厂家： | 
ONSEMI |
| 描述： | High Current Bias Resistor Transistor
|
| 文件： | 总8页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSB9435T1
Preferred Device
High Current Bias
Resistor Transistor
PNP Silicon
• Collector –Emitter Sustaining Voltage –
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V
= 30 Vdc (Min) @ I = 10 mAdc
CEO(sus)
C
• High DC Current Gain –
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
h
FE
= 125 (Min) @ I = 0.8 Adc
C
= 90 (Min) @ I = 3.0 Adc
C
• Low Collector –Emitter Saturation Voltage –
= 0.275 Vdc (Max) @ I = 1.2 Adc
V
CE(sat)
C
= 0.55 Vdc (Max) @ I = 3.0 Adc
C
• SOT–223 Surface Mount Packaging
• ESD Rating – Human Body Model: Class 1B
COLLECTOR 2,4
ESD Rating – Machine Model: Class B
BASE
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
30
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
CEO
EMITTER 3
4
V
45
CB
EB
V
±6.0
1.0
Base Current – Continuous
I
B
C
1
2
3
Collector Current – Continuous
Collector Current – Peak
I
3.0
5.0
SOT–223
CASE 318E
STYLE 1
Total Power Dissipation @ T = 25_C
P
D
3.0
24
1.56
Watts
mW/_C
Watts
C
Derate above 25_C
Total P @ T = 25_C mounted on 1″
D
A
sq. (645 sq. mm) Collector pad on
FR–4 bd material
MARKING DIAGRAM
9435R
Total P @ T = 25_C mounted on
0.72
Watts
D
A
0.012″ sq. (7.6 sq. mm) Collector
pad on FR–4 bd material
Operating and Storage Junction
Temperature Range
T , T
–55 to
+150
_C
J
stg
THERMAL CHARACTERISTICS
Characteristic
9435R = Device Code
Symbol
Max
Unit
Thermal Resistance – Junction to Case
– Junction to Ambient on 1″ sq.
(645 sq. mm) Collector pad on
FR–4 board material
– Junction to Ambient on 0.012″ sq.
(7.6 sq. mm) Collector pad on FR–4
board material
R
R
42
80
_C/W
θ
JC
JA
θ
ORDERING INFORMATION
Device
NSB9435T1
Package
Shipping
1000/Tape & Reel
R
174
260
θ
JA
SOT–223
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from
case for 5 seconds
T
_C
L
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 2
NSB9435T1/D
NSB9435T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 10 mAdc, I = 0 Adc)
V
Vdc
Vdc
CEO(sus)
30
–
–
–
–
C
B
Emitter–Base Voltage
(I = 50 mAdc, I = 0 Adc)
V
EBO
6.0
E
C
Collector Cutoff Current
(V = 25 Vdc)
I
µAdc
CER
–
–
–
–
20
200
CE
(V = 25 Vdc, T = 125°C)
CE
J
Emitter Cutoff Current
I
mAdc
EBO
(V = 5.0 Vdc)
BE
–
–
700
ON CHARACTERISTICS (Note 1)
Collector–Emitter Saturation Voltage
V
V
Vdc
CE(sat)
(I = 0.8 Adc, I = 20 mAdc)
–
–
–
0.155
–
–
0.210
0.275
0.550
C
B
(I = 1.2 Adc, I = 20 mAdc)
C
B
(I = 3.0 Adc, I = 0.3 Adc)
C
B
Base–Emitter Saturation Voltage
(I = 3.0 Adc, I = 0.3 Adc)
Vdc
Vdc
–
BE(sat)
–
–
–
–
1.25
1.10
C
B
Base–Emitter On Voltage
V
BE(on)
(I = 1.2 Adc, V = 4.0 Vdc)
C
CE
DC Current Gain
h
FE
(I = 0.8 Adc, V = 1.0 Vdc)
125
110
90
220
–
–
–
–
–
C
CE
(I = 1.2 Adc, V = 1.0 Vdc)
C
CE
(I = 3.0 Adc, V = 1.0 Vdc)
C
CE
Resistor
R1
7.5
10
12.5
kW
DYNAMIC CHARACTERISTICS
Output Capacitance
C
pF
pF
ob
(V = 10 Vdc, I = 0 Adc, f = 1.0 MHz)
–
–
–
100
135
110
150
–
CB
E
Input Capacitance
(V = 8.0 Vdc)
EB
C
ib
Current–Gain – Bandwidth Product (Note 2)
(I = 500 mA, V = 10 V, F = 1.0 MHz)
f
T
MHz
–
C
CE
test
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. f = |h | S f
T
FE
test
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2
NSB9435T1
0.3
1000
0.25
0.2
I
C
= 3.0 A
T = 150°C
A
25°C
0.15
0.1
100
–55°C
1.2 A
0.8 A
0.5 A
0.25 A
0.05
0
V
CE
= 1.0 V
10
0.001
0.01
0.1
1
0.1
1
10
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Saturation Region
Figure 2. DC Current Gain
1000
10
1
T = 150°C
A
V
BE(sat)
25°C
100
–55°C
V
CE(sat)
0.1
V
CE
= 4.0 V
I /I = 10
C B
10
0.01
0.1
1
10
1.0E–01
1.0E+00
1.0E+01
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
1.0E+00
1.2
V
V
BE(sat)
1
–55°C
25°C
CE(sat)
0.8
0.6
0.4
T = 155°C
A
1.0E–01
1.0E–02
0.2
0
I /I = 50
C
B
1.0E–01
1.0E+00
1.0E+01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. “ON” Voltages
Figure 6. VBE(on) Voltage
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3
NSB9435T1
1000
100
10
0.5 ms
5.0 ms
1.0
0.1
100 ms
10
1
0.01
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
f = 1 MHz
T = 25°C
A
0.001
0.1
1
10
100
0.1
1.0
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
10
100
V , REVERSE VOLTAGE (V)
V
R
Figure 7. Output Capacitance
Figure 8. Active Region Safe Operating Area
4.0
3.0
2.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I – V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
C
The data of Figure 8 is based on T
variable depending on conditions. Secondary breakdown
= 150_C; T is
J(pk)
C
pulse limits are valid for duty cycles to 10% provided T
J(pk)
1.0
0
v 150_C. T
may be calculated from the data in
J(pk)
Figure 10. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
T
A
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 9. Power Derating
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
(pk)
0.01
R
(t) = r(t) θ
JA
= 174°C/W
θ
JA
θ
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
SINGLE PULSE
t
1
0.001
1
t
2
T
- T = P θ (t)
A (pk) JA
J(pk)
DUTY CYCLE, D = t /t
1 2
0.0001
0.0001
0.001
0.01
0.1
t, TIME (seconds)
1.0
10
100
1000
Figure 10. Thermal Response
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4
NSB9435T1
PACKAGE DIMENSIONS
SOT–223 (TO–261)
PLASTIC PACKAGE
CASE 318E–04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
DIM MIN MAX
MILLIMETERS
S
B
MIN
6.30
3.30
1.50
0.60
2.90
2.20
0.020
0.24
1.50
0.85
0
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
D
G
H
J
L
0.0008 0.0040
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
J
K
L
C
M
S
_
_
_
_
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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5
NSB9435T1
Notes
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6
NSB9435T1
Notes
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7
NSB9435T1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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NSB9435T1/D
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