MUR120/51 [VISHAY]
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;
| 型号： | MUR120/51 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN 二极管 |
| 文件： | 总3页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR120
Vishay General Semiconductor
Ultrafast Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
1.0 A
200 V
35 A
DO-204AC (DO-15)
25 ns
VF
0.710 V
175 °C
Tj max.
Features
Mechanical Data
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Case: DO-204AC (DO-15)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
VRRM
MUR120
200
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRWM
VDC
200
200
1.0
35
V
V
A
A
Maximum DC blocking voltage
Maximum average forward rectified current at TA = 130 °C
IF(AV)
IFSM
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Document Number 88683
21-Jul-05
www.vishay.com
1
MUR120
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Maximum instantaneous
forward voltage (1)
Test condition
Symbol
VF
MUR120
Unit
V
at 1.0 A,
at 1.0 A,
TJ = 25 °C
0.875
0.710
TJ = 150 °C
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
IR
2.0
50
µA
TJ = 150 °C
Maximum reverse recovery at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
time
trr
trr
25
35
ns
ns
Maximum reverse recovery at IF = 1.0 A, di/dt = 50 A/µs, VR= 30 V,
time
Irr= 10 % IRM
Maximum forward recovery at IF = 1.0 A, di/dt = 100 A/µs, Irec to 1.0 V
time
tfr
25
ns
Notes:
(1) Pulse test: tp = 300 µs pulse, duty cycle ≤ 2 %
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Typical Thermal Resistance Junction to Ambient (1)
Notes:
Symbol
RθJA
MUR120
27
Unit
°C/W
(1) Lead length = 3/8" on P.C. Board with 1.5" x 1.5" copper surface
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
3.0
2.0
1.0
0
50
40
30
20
10
0
1
0
25
50
75
Ambient Temperature (°C)
100
125
150
175
10
Number of Cycles at 60 H
100
Z
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88683
21-Jul-05
2
MUR120
Vishay General Semiconductor
80
10
1000
100
10
T
= 25°C
J
f = 1.0 MHz
Vsig = 50mV
p-p
TJ = 175°C
TJ = 100°C
1
TJ = 25°C
0.1
0.01
0.2
0.4
0.6
Instantaneous Forward Voltage (V)
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
TJ = 175°C
10
1
TJ = 100°C
0.1
TJ = 25°C
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88683
21-Jul-05
www.vishay.com
3
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