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MUR120120 [SIRECTIFIER]

快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
MUR120120
型号： MUR120120
厂家： SIRECTIFIER SEMICONDUCTORS    SIRECTIFIER SEMICONDUCTORS
描述：

快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。

二极管 快恢复二极管 超快恢复二极管 快速恢复二极管
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MUR120120  
Ultra Fast Recovery Diodes  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AC  
C
A
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
C(TAB)  
A
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
C
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
A=Anode, C=Cathode, TAB=Cathode  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
J
1.0  
1.4 0.040 0.055  
K
10.8 11.0 0.426 0.433  
VRSM  
V
VRRM  
V
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
MUR120120  
1200  
1200  
N
1.5 2.49 0.087 0.102  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
TVJ=TVJM  
100  
109  
75  
IFRMS  
IFAVM  
IFAV  
TC=60oC; rectangular, d=0.5  
A
TC=95oC; rectangular, d=0.5  
tp<10us; rep. rating, pulse width limited by TVJM  
tbd  
IFRM  
TVJ=45oC  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
600  
660  
540  
600  
IFSM  
A
TVJ=150oC  
TVJ=45oC  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
1800  
1800  
1450  
1500  
I2t  
A2s  
oC  
TVJ=150oC  
-40...+150  
150  
-40...+150  
TVJ  
TVJM  
Tstg  
Ptot  
Md  
TC=25oC  
357  
0.8...1.2  
6
W
Nm  
g
Mounting torque  
Weight  
MUR120120  
Ultra Fast Recovery Diodes  
Symbol  
Test Conditions  
Characteristic Values  
Unit  
typ.  
max.  
TVJ=25oC; VR=VRRM  
3
1.5  
20  
IR  
o
.
TVJ=25 C; VR=0.8 VRRM  
mA  
V
o
.
TVJ=125 C; VR=0.8 VRRM  
IF=70A; TVJ=150oC  
1.55  
1.8  
VF  
TVJ=25oC  
For power-loss calculations only  
1.2  
4.6  
V
VTO  
rT  
m
TVJ=TVJM  
RthJC  
RthCK  
RthJA  
0.35  
0.25  
K/W  
35  
60  
30  
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC  
_
VR=350V; IF=75A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C  
40  
25  
ns  
A
trr  
o
IRM  
FEATURES  
APPLICATIONS  
ADVANTAGES  
* International standard package  
JEDEC TO-247AC  
* Antiparallel diode for high frequency  
switching devices  
* High reliability circuit operation  
* Low voltage peaks for reduced  
protection circuits  
* Planar passivatd chips  
* Very short recovery time  
* Extremely low switching losses  
* Low IRM-values  
* Antisaturation diode  
* Snubber diode  
* Free wheeling diode in converters  
and motor control circuits  
* Rectifiers in switch mode power  
supplies (SMPS)  
* Low noise switching  
* Low losses  
* Operating at lower temperature or  
space saving by reduced cooling  
* Soft recovery behaviour  
* Inductive heating and melting  
* Uninterruptible power supplies (UPS)  
* Ultrasonic cleaners and welders  
MUR120120  
Ultra Fast Recovery Diodes  
150  
A
16  
uC  
14  
120  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
A
125  
F 100  
75  
100  
IRM  
Qr  
12  
10  
8
I
IF=140A  
IF= 70A  
IF= 35A  
80  
60  
40  
20  
0
IF=140A  
IF= 70A  
IF= 35A  
TVJ=150°C  
TVJ=100°C  
TVJ= 25°C  
6
50  
4
25  
2
0
0
A/us  
-diF/dt  
0.0  
0.5  
1.0  
1.5  
VF  
2.0  
100  
1000  
0
200 400 600 1000  
V
A/us  
-diF/dt  
Fig. 1 Forward current IF versus VF  
Fig. 2 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 3 Peak reverse current IRM  
versus -diF/dt  
1.4  
1.2  
500  
60  
1.5  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
IF = 100A  
ns  
V
450  
400  
50  
VFR  
us  
trr  
tfr  
Kf  
40  
30  
20  
10  
0
1.0  
1.0  
tfr  
VFR  
350  
IRM  
IF=140A  
IF= 70A  
IF= 35A  
0.8  
300  
250  
200  
0.5  
Qr  
0.6  
0.4  
0.
0
40  
80  
120  
160  
0
200 400 600 1000  
A/us  
0
200 400 600 800 1A/us  
diF/dt  
°C  
-diF/dt  
TVJ  
Fig. 4 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 5 Recovery time trr versus -diF/dt  
Fig. 6 Peak forward voltage VFR and tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
D=0.7  
0.5  
1
2
3
4
0.017  
0.00038  
0.0026  
0.0387  
0.274  
0.0184  
0.1296  
0.185  
ZthJC  
0.3  
0.2  
0.1  
0.01  
0.05  
Single Pulse  
0.01  
0.001  
0.01  
0.1  
1
10  
s
t
Fig. 7 Transient thermal resistance junction to case  

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