MUR12060 [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ +125°C, Tjm = +125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 + 125°C ， TJM = + 125°C 。
| 型号： | MUR12060 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ +125°C, Tjm = +125°C。 |
| 文件： | 总3页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR12060
Ultra Fast Recovery Diodes
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions TO-247AC
C
A
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
C(TAB)
A
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
C
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
A=Anode, C=Cathode, TAB=Cathode
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
VRSM
V
VRRM
V
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
MUR12060
600
600
N
1.5 2.49 0.087 0.102
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
100
126
77
IFRMS
IFAVM
IFAV
TC=70oC; rectangular, d=0.5
A
TC=110oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
tbd
IFRM
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
600
660
540
600
IFSM
A
TVJ=150oC
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1800
1800
1450
1500
I2t
A2s
oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
Md
TC=25oC
357
0.8...1.2
6
W
Nm
g
Mounting torque
Weight
MUR12060
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
3
0.75
20
IR
o
.
TVJ=25 C; VR=0.8 VRRM
mA
V
o
.
TVJ=125 C; VR=0.8 VRRM
IF=70A; TVJ=150oC
1.12
1.3
VF
TVJ=25oC
For power-loss calculations only
0.85
3.5
V
VTO
rT
m
TVJ=TVJM
RthJC
RthCK
RthJA
0.35
0.25
K/W
35
50
21
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC
_
VR=350V; IF=80A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C
35
17
ns
A
trr
o
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AC
* Antiparallel diode for high frequency
switching devices
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
* Soft recovery behaviour
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
MUR12060
Ultra Fast Recovery Diodes
150
A
7
80
A
70
TVJ= 100°C
uC
TVJ= 100°C
VR = 300V
VR = 300V
6
125
F 100
75
IRM
Qr
60
50
40
30
20
10
0
IF=140A
IF= 70A
IF= 35A
I
5
IF=140A
IF= 70A
IF= 35A
4
TVJ=150°C
TVJ=100°C
3
2
1
0
50
25
TVJ=25°C
0
0.0
V
A/us
-diF/dt
0.5
1.0
VF
1.5
100
1000
0
200 400 600 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
1.4
1.2
240
60
3.0
TVJ= 100°C
IF = 100A
TVJ= 100°C
VR = 300V
ns
V
us
50
VFR
2.5
220
trr
tfr
Kf
40
30
20
10
0
2.0
1.5
1.0
0.5
0.
200
1.0
VFR
tfr
IF=140A
IF= 70A
IF= 35A
Qr
180
0.8
160
IRM
0.6
140
0.4
0
50
100
TVJ
150
0
200 400 600 1000
A/us
0
200 400 600 800 1A/us
°C
-diF/dt
diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
D=0.7
0.5
1
2
3
4
0.017
0.00038
0.0026
0.0387
0.274
0.0184
0.1296
0.185
ZthJC
0.3
0.2
0.1
0.01
0.05
Single Pulse
0.01
0.001
0.01
0.1
1
10
s
t
Fig. 7 Transient thermal resistance junction to case at various duty cycles
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