LL103A/D1 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, GLASS, MINIMELF-2;
| 型号： | LL103A/D1 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, GLASS, MINIMELF-2 开关 二极管 |
| 文件： | 总3页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LL103A thru LL103C
Vishay Semiconductors
formerly General Semiconductor
Schottky Diodes
Features
• For general purpose applications
MiniMELF (SOD-80C)
• The LL103A, B, C series is a metal-on-silicon
Schottky barrier device which is protected by a
PN junction guard ring.
Cathode Band
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications. Other
applications are click suppression, efficient full wave
bridges in telephone subsets, and blocking diodes in
rechargeable low voltage battery systems.
.063 (1.6)
.051 (1.3)
Dia.
.019 (0.48)
.011 (0.28)
• This diode is also available in the DO-35 case with
type designation SD103A, B, C and in the SOD-
123 case with type designation SD103AW,
SD103BW, SD103CW.
.146 (3.7)
.130 (3.3)
Dimensions in inches and (millimeters)
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
LL103A
LL103B
LL103C
40
30
20
Peak Inverse Voltage
VRRM
V
Power Dissipation (Infinite Heatsink)
Single Cycle Surge 60-Hz Sine Wave
Thermal Resistance Junciton to Ambient
Junction Temperature
Ptot
IFSM
RθJA
Tj
400(1)
mW
A
15
300(1)
°CW
°C
125
Storage Temperature Range
TS
–55 to +150
°C
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
LL103A
LL103B
LL103C
VR = 30V
VR = 20V
VR = 10V
—
—
—
—
—
—
5
5
5
Leakage Current
IR
µA
IF = 20mA
IF = 200mA
—
—
—
—
0.37
0.6
VF
Ctot
trr
Forward Voltage Drop
Junction Capacitance
V
VR = 0V, f = 1MHz
—
50
—
pF
IF = IR = 50mA to 200mA,
recover to 0.1IR
Reverse Recovery Time
—
—
10
ns
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Document Number 88206
13-May-02
www.vishay.com
1
LL103A thru LL103C
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
µ
www.vishay.com
2
Document Number 88206
13-May-02
LL103A thru LL103C
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88206
13-May-02
www.vishay.com
3
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