LL103B [EIC]

SCHOTTKY BARRIER DIODES; 肖特基势垒二极管
LL103B
型号: LL103B
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SCHOTTKY BARRIER DIODES
肖特基势垒二极管

整流二极管
文件: 总2页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SCHOTTKY BARRIER DIODES  
LL103A - LL103C  
MiniMELF (SOD-80C)  
FEATURES :  
• For general purpose applications  
Cathode Mark  
• The LL103A, B, C series is a metal-on-silicon  
Schottky barrier device which is protected by a  
PN junction guard ring.  
f 0.063 (1.64)  
0.055 (1.40)  
0.019(0.48)  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast  
switching and low logic level applications.  
• Other applications are click suppression, efficient  
full wave bridges in telephone subsets, and  
blocking diodes in rechargeable low voltage  
battery systems.  
0.011(0.28)  
0.142(3.6)  
0.134(3.4)  
Mounting Pad Layout  
0.098 (2.50)  
Max.  
0.049 (1.25)Min.  
• These diodes are also available in the DO-35 case with  
type designation SD103A, B, C  
0.079 (2.00)Min.  
• Pb / RoHS Free  
0.197 (5.00)  
REF  
MECHANICAL DATA :  
Case: MiniMELF Glass Case (SOD-80C)  
Weight: approx. 0.05g  
Dimensions in inches and ( millimeters )  
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)  
Parameter  
Symbol  
Value  
40  
Unit  
LL103A  
LL103B  
LL103C  
VRRM  
Repetitive Peak Reverse Voltage  
V
30  
20  
IFSM  
PD  
Single Cycle Surge 60 Hz Sine Wave  
Power Dissipation (Infinite Heatsink)  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
15  
A
mW  
°C/W  
°C  
400(1)  
300(1)  
Rq  
JA  
TJ  
125  
TS  
Storage temperature range  
-55 to + 150  
°C  
Note: (1) Valid provided that electrodes are kept at ambient temperature.  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Test Condition  
Min  
Typ  
Max  
5
Unit  
Parameter  
Symbol  
VR = 30 V  
LL103A  
LL103B  
LL103C  
-
-
-
-
-
-
-
-
IR  
VR = 20 V  
VR = 10 V  
IF = 20mA  
IF = 200mA  
Reverse Current  
mA  
5
-
5
-
0.37  
0.6  
-
VF  
Forward Voltage Drop  
Diode Capacitance  
V
-
VR = 0 V, f = 1MHz  
IF = IR = 5mA to 200mA  
recover to 0.1IR  
Cd  
Trr  
50  
pF  
ns  
Reverse Recovery Time  
-
10  
-
Page 1 of 2  
Rev. 02 : March 24, 2005  
RATING AND CHARACTERISTIC CURVES ( LL103A - LL103C )  
Typical variation of forward current  
and forward voltage for primary conduction  
through the schottky barrier  
Typical high current forward  
conduction curve  
tp = 300ms , duty cycle = 2%  
103  
5
4
3
2
1
102  
10  
1
10-1  
10-2  
0
0.5  
Forward Voltage , VF (V)  
0
0.5  
1
0
1
1.5  
Forward Voltage , VF (V)  
Typical non repetitive forward surge  
current versus pulse width  
Rectangular pulse  
Typical variation of reverse current  
at various temperatures  
50  
103  
Ta =125°C  
40  
102  
30  
20  
10  
10  
1
25°C  
10-1  
0
10-3 10-2 10-1  
102  
103  
0
10  
20  
30  
40  
50  
1
10  
Reverse Voltage , VR (V)  
Pulse Test , tp (ms)  
Page 2 of 2  
Rev. 02 : March 24, 2005  

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