LL103B [VISHAY]

Schottky Diodes; 肖特基二极管
LL103B
型号: LL103B
厂家: VISHAY    VISHAY
描述:

Schottky Diodes
肖特基二极管

整流二极管 肖特基二极管
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LL103A THRU LL103C  
Schottky Diodes  
FEATURES  
For general purpose applications.  
MiniMELF  
The LL103A, B, C is a metal-on-silicon  
Schottky barrier device which is pro-  
tected by a PN junction guard ring.  
Cathode Mark  
The low forward voltage drop and fast switch-  
ing make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes  
for fast switching and low logic level applications.  
Other applications are click suppression, efficient  
full wave bridges in telephone subsets, and blocking  
diodes in rechargeable low voltage battery systems.  
.019 (0.48)  
.011 (0.28)  
.142 (3.6)  
.134 (3.4)  
This diode is also available in DO-35 case with  
the type designation SD103A, B, C, and in the  
SOD-123 case with type designation  
Dimensions in inches and (millimeters)  
SD103AW, SD103BW, SD103CW.  
MECHANICAL DATA  
Case: MiniMELF Glass Case SOD-80C  
Weight: approx. 0.05 g  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
Unit  
Peak Inverse Voltage  
LL103A  
LL103B  
LL103C  
V
RRM  
V
RRM  
V
RRM  
40  
30  
20  
V
V
V
Power Dissipation (Infinite Heatsink)  
C
P
tot  
4001)  
mW  
T = 3/8from Body  
derates at 4 mW/°C to 0 at 125 °C  
Junction Temperature  
T
T
125  
°C  
°C  
A
j
Storage Temperature Range  
–55 to +150  
15  
S
Single Cycle Surge  
60-Hz Sine Wave  
I
FSM  
1) Valid provided that electrodes are kept at ambient temperature.  
4/98  
LL103A THRU LL103C  
ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Leakage Current  
at V = 30 V  
LL103A  
LL103B  
LL103C  
I
5
5
5
µA  
µA  
µA  
R
R
at V = 20 V  
I
R
R
at V = 10 V  
I
R
R
Forward Voltage Drop  
at I = 20 mA  
V
F
V
F
0.37  
0.6  
V
V
F
at I = 200 mA  
F
Junction Capacitance  
C
50  
10  
pF  
ns  
tot  
at V = 0 V, f = 1 MHz  
R
Reverse Recovery Time  
t
rr  
at I = I = 50 mA to 200 mA, recover to 0.1 I  
F
R
R
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C  
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C  

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