IRFZ48_11 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | IRFZ48_11 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总9页 (文件大小：1520K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFZ48, SiHFZ48
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
60
Available
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• 175 °C Operating Temperature
• Fast Switching
RDS(on) (Ω)
VGS = 10 V
0.018
RoHS*
COMPLIANT
Qg (Max.) (nC)
110
29
Q
Q
gs (nC)
gd (nC)
36
Configuration
Single
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFZ48PbF
SiHFZ48-E3
IRFZ48
Lead (Pb)-free
SnPb
SiHFZ48
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
60
V
VGS
20
TC = 25 °C
C = 100 °C
50
Continuous Drain Currente
VGS at 10 V
ID
T
50
A
Pulsed Drain Currenta
IDM
290
Linear Derating Factor
1.3
W/°C
mJ
A
Single Pulse Avalanche Energyb
Avalanche Currenta
EAS
IAR
100
50
Repetitive Avalanche Energya
EAR
19
mJ
W
Maximum Power Dissipation
T
C = 25 °C
PD
190
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
- 55 to + 175
°C
for 10 s
6-32 or M3 screw
300
10
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12).
c. ISD ≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
0.80
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± ±20
60
-
-
-
-
V
V/°C
V
VDS Temperature Coefficient
0.060
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
-
4.0
100
25
nA
VDS = 60 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 43 Ab
VDS = 25 V, ID = 43 Ab
-
250
0.018
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
27
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
2400
1300
190
-
-
-
VGS = 0 V,
VDS = 25 V,
pF
f = 1.0 MHz, see fig. 5
-
110
29
36
-
ID = 72 A, VDS = 48 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
nC
-
8.1
250
210
250
-
V
DD = 30 V, ID = 72 A,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
Rg = 9.1 Ω, RD = 0.34±Ω, see fig. 10b
-
-
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
50c
290
D
IS
-
-
-
-
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 72 A, VGS = 0 Vb
-
-
-
-
2.0
180
0.80
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
120
0.50
ns
μC
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package, (die current = 72 A).
www.vishay.com
2
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix
L
VDS
Vary tp to obtain
required IAS
VDS
tp
VDD
D.U.T.
RG
+
-
VDD
VDS
IAS
10 V
0.01 Ω
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
+
-
QGS
QGD
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48, SiHFZ48
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
+
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VDD
-
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91294.
Document Number: 91294
S11-0518-Rev. B, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-220AB
A
MILLIMETERS
MIN.
INCHES
MAX.
E
DIM.
A
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
F
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
Ø P
b
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
* M
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
b(1)
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
Document Number: 71195
Revison: 01-Nov-10
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
相关型号：
IRG41BC20KD
Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, FULL PACK-3
INFINEON
IRG41BC20KDPBF
Insulated Gate Bipolar Transistor, 11.5A I(C), 600V V(BR)CES, N-Channel, FULL PACK-3
INFINEON
IRG4BAC50SPBF
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN
INFINEON
IRG4BAC50WPBF
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN
INFINEON
IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
INFINEON
IRG4BC10KPBF
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明