IRG4BAC50WPBF [INFINEON]
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN;
| 型号： | IRG4BAC50WPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN 电动机控制 栅 瞄准线 晶体管 |
| 文件： | 总8页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -93769
PROVISIONAL
IRG4BAC50W
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Designed expressly for switch-mode power
supply and PFC (power factor correction)
applications
VCES = 600V
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
VCE(on) max. = 2.30V
G
@VGE = 15V, IC = 27A
E
• Low IGBT conduction losses
• Latest generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
N-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300kHz)
Super-220™
(TO-273AA)
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
IC @ TC = 25°C
55
IC @ TC = 100°C
27
A
ICM
220
ILM
220
VGE
± 20
170
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
PD @ TC = 25°C
200
W
PD @ TC = 100°C Maximum Power Dissipation
78
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.64
–––
40
Units
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.50
–––
°C/W
TBD
–––
g (oz)
1
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1/19/2000
IRG4BAC50W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
600
18
—
—
—
—
3.0
—
27
—
—
—
—
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.41
V/°C VGE = 0V, IC = 5.0mA
IC = 27A
1.93 2.3
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.25
1.71
—
—
—
IC = 55A
V
See Fig.2, 5
IC = 27A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
41
—
mV/°C VCE = VGE, IC = 1.0mA
gfe
Forward Transconductance …
—
S
VCE = 100 V, IC = 27A
VGE = 0V, VCE = 600V
—
250
2.0
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
—
5000
±100
IGES
Gate-to-Emitter Leakage Current
—
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
180 270
Conditions
IC = 27A
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
24
63
46
33
36
95
—
—
nC
VCC = 400V
VGE = 15V
See Fig.8
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
120 180
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
57
86
—
—
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.08
0.32
mJ See Fig. 9, 10, 14
0.40 0.5
td(on)
tr
td(off)
tf
31
43
—
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 27A, VCC = 480V
ns
Turn-Off Delay Time
Fall Time
210
62
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
mJ See Fig. 10,11, 14
Ets
LC
Total Switching Loss
Internal Collector Inductance
Internal Emitter Inductance
Input Capacitance
1.14
2.0
5.0
3700
260
68
nH
Measured 5mm from package
LE
Cies
Coes
Cres
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See Fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BAC50W
100
80
60
40
20
0
F or both:
Tria ng ular w ave:
D uty cycle: 50%
T
T
=
125°C
90°C
J
=
sink
G ate drive as specified
Pow e r D iss ip ation 40 W
=
C la m p volta ge:
80 % o f ra te d
Sq uare wave:
60% of ra te d
voltage
Ideal diodes
A
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
1000
100
10
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
°
T = 25 C
J
10
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
1
1
10
5
6
7
8
9
10
11
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BAC50W
60
50
40
30
20
10
0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 54A
C
I
I
= 27A
=13.5A
C
C
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
°
T , Junction Temperature ( C)
J
°
, Case Temperature ( C)
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BAC50W
8000
6000
4000
2000
0
20
16
12
8
V
= 0V,
f = 1MHz
C
GE
V
CC
I
C
= 400V
= 27A
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
oes
ce
C
ies
C
C
oes
res
4
0
1
10
100
0
40
Q
80
120
160
200
V
, Collector-to-Emitter Voltage (V)
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
3.0
2.0
1.0
5.0Ω
R
=
= 15V
V
V
= 480V
G
CC
GE
V
= 15V
= 25
GE
°
V = 480V
T
C
CC
J
I
= 27A
C
I
C
=
A
54
I
I
=
=
A
A
27
C
1
13.5
C
0.1
0.0
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
10
20
30
40
50
°
R
, Gate Resistance (Ω)
T , Junction Temperature ( C )
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BAC50W
3.0
1000
100
10
R
G
T
J
= 5.0Ω
V
T
= 20V
GE
J
= 125 oC
°
= 150 C
V
V
GE
= 480V
= 15V
CC
2.0
1.0
0.0
SAFE OPERATING AREA
10
1
1
100
1000
0
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BAC50W
L
D.U.T.
480V
RL =
V
*
C
4 X IC@25°C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
)
o ff
ts
o n
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7
IRG4BAC50W
Super-220™ (TO-273AA) Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
8
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