IRG4BAC50SPBF [INFINEON]
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN;
| 型号： | IRG4BAC50SPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-273AA, SUPER-220, 3 PIN 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93771
PROVISIONAL
IRG4BAC50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
V
CES = 600V
parameter distribution and higher efficiency than
Generation 3
VCE(on) typ. = 1.28V
G
• Industry Super-220™ (TO-273AA) package
@VGE = 15V, IC = 41A
E
N-channel
Benefits
• Generation 4 IGBT offers highest efficiency
• Optimized for specific application conditions
Super-220™
(TO-273AA)
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Breakdown Voltage
Max.
600
70
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
IC @ TC = 100°C
41
A
ICM
140
140
± 20
20
ILM
VGE
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
PD @ TC = 25°C
200
78
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.64
–––
40
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.50
–––
TBD
–––
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1
1/19/2000
IRG4BAC50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
17
—
—
—
—
0.75
V/°C VGE = 0V, IC = 1.0mA
IC = 41A
1.28 1.36
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.62
1.28
—
—
—
IC = 80A
See Fig.2, 5
V
IC = 41A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-9.3
34
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 41A
VGE = 0V, VCE = 600V
—
250
2.0
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
—
1000
±100
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
—
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
180 280
Conditions
IC = 41A
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
24
61
33
30
37
92
—
—
nC
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
650 980
400 600
IC = 41A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.72
8.27
—
—
mJ See Fig. 9, 10, 14
8.99 13
31
31
—
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 41A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
1080
620
15
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
mJ See Fig. 11, 14
Ets
LC
Total Switching Loss
Internal Collector Inductance
Internal Emitter Inductance
Input Capacitance
2.0
nH
Measured 5mm from package
LE
5.0
Cies
Coes
Cres
4100
250
48
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See Fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BAC50S
100
80
60
40
20
0
F or both:
Trian gu la r wa v e:
D uty cycle: 50%
I
T J
=
125°C
90°C
T
=
sink
Ga te drive as specified
Po w e r D iss ipa tion 4 0 W
=
C lam p vo ltage :
80% of rated
S qu are wave:
60 % of ra ted
volt age
I
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
1000
100
10
T = 150oC
J
10
T = 25 oC
J
T = 150oC
J
T = 25oC
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
0.1
1
1
10
5
6
7
8
9
10
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4BAC50S
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
LIM ITED BY PA CK AG E
V
= 15V
G E
V
= 15V
GE
80 us PULSE WIDTH
I
= 82A
C
60
40
20
0
I
I
= 41A
=20.5A
C
C
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
, Junction Temperature ( C)
T
TC , Case Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BAC50S
8000
6000
4000
2000
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
CC
I
C
= 400V
= 41A
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
oes
4
C
res
0
1
10
100
0
40
80
120
160
200
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
10
1
10.0
9.5
9.0
8.5
5.0Ω
= 15V
= 480V
R
= Ohm
V
V
= 480V
G
CC
GE
V
= 15V
GE
°
V
CC
T
I
= 25 C
J
C
= 41A
I
I
I
=
=
82A
C
C
C
A
41
=20.5A
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
R
, Gate Resistance (Ω)
G
°
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BAC50S
1000
100
10
40
5.0Ω
V
T
= 20V
R
T
= O
G
J
GE
J
°
= 125 oC
= 150 C
V
= 480V
= 15V
CC
V
GE
30
20
10
0
SAFE OPERATING AREA
10
1
1
100
1000
0
20
40
60
80
100
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BAC50S
L
D.U.T.
480V
RL =
V
*
C
4 X IC@25°C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse w idth and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
Fig. 14b - Switching Loss
Waveforms
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7
IRG4BAC50S
Super-220™ (TO-273AA) Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
8
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