IRFZ48RS [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | IRFZ48RS |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：962K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Power MOSFET
FEATURES
• Advanced Process Technology
PRODUCT SUMMARY
VDS (V)
60
Available
• Dynamic dV/dt
RDS(on) (Ω)
VGS = 10 V
0.018
RoHS*
• 175 °C Operating Temperature
• Fast Switching
COMPLIANT
Qg (Max.) (nC)
110
29
Q
Q
gs (nC)
gd (nC)
• Fully Avalanche Rated
36
• Drop in Replacement of the IRFZ48/SiHFZ48 for
Linear/Audio Applications
Configuration
Single
• Lead (Pb)-free Available
D
D2PAK (TO-263)
I2PAK (TO-262)
DESCRIPTION
Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2 W in a typical surface mount application.
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
IRFZ48RSPbF
SiHFZ48RS-E3
IRFZ48RS
I2PAK (TO-262)
IRFZ48RLPbF
Lead (Pb)-free
SnPb
SiHFZ48RL-E3
-
-
SiHFZ48RS
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
60
20
V
VGS
TC = 25 °C
TC =100°C
50
Continuous Drain Currente
VGS at 10 V
ID
50
A
Pulsed Drain Currenta, e
IDM
290
Linear Derating Factor
1.3
W/°C
mJ
Single Pulse Avalanche Energyb, e
Maximum Power Dissipation
EAS
PD
100
T
C = 25 °C
190
W
Peak Diode Recovery dV/dtc, e
dV/dt
TJ, Tstg
4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
- 55 to + 175
300d
°C
for 10 s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
www.vishay.com
1
WORK-IN-PROGRESS
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
10
UNIT
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 22 µH, RG = 25 Ω, IAS = 72 A (see fig. 12).
c. ISD ≤ 72 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (Die Current = 72 A).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.50
-
RthCS
-
°C/W
RthJC
0.8
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAc
VDS = VGS, ID = 250 µA
60
-
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
2.0
-
0.60
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-
-
-
-
-
4.0
100
25
VGS
VDS = 60 V, VGS = 0 V
DS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 43 Ab
VDS = 25 V, ID = 43 Ab
=
20 V
nA
-
Zero Gate Voltage Drain Current
IDSS
µA
V
-
250
0.018
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
27
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
2400
1300
190
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5c
V
-
pF
nC
-
110
29
36
-
ID = 72 A, VDS = 48 V,
see fig. 6 and 13b, c
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
-
8.1
250
210
250
-
V
DD = 30 V, ID = 72 A,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
R
G = 9.1 Ω, RD = 0.34 Ω, see fig. 10b, c
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
www.vishay.com
2
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
50c
A
G
ISM
290
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 72 A, VGS = 0 Vb
-
-
-
-
2.0
180
0.80
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
120
0.50
ns
µC
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/µsb, c
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Current limited by the package, (Die Current = 72 A).
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
www.vishay.com
3
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
72A
I =
D
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
T , Junction Temperature ( C)
J
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
4
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
80
LIMITED BY PACKAGE
60
40
20
0
25
50
75
100
125
150
175
°
T , Case Temperature( C)
C
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 7 - Typical Source-Drain Diode Forward Voltage
RD
1000
VDS
OPERATION IN THIS AREA LIMITED
BY R
VGS
DS(on)
D.U.T.
10us
RG
+
V
-
DD
100
100us
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1ms
Fig. 10a - Switching Time Test Circuit
10
10ms
VDS
90 %
°
T = 25 C
J
C
°
T = 175 C
Single Pulse
1
0.1
1
10
100
1000
10 %
VGS
V
, Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
www.vishay.com
5
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
Driver
L
VDS
D.U.T.
IAS
RG
+
-
V
A
DD
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
250
I
D
TOP
29A
51A
200
150
100
50
BOTTOM 72A
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
www.vishay.com
6
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 13b - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
+
-
Circuit layout considerations
D.U.T.
•
•
Low stray inductance
Ground plane
•
Low leakage inductance
current transformer
+
-
-
+
RG
•
•
•
•
dV/dt controlled by RG
+
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
VDD
-
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91296.
Document Number: 91296
S-Pending-Rev. A, 22-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
IRFZ48RSTRR
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
VISHAY
IRFZ48STRL
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
INFINEON
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