IRFZ48RSPBF [INFINEON]
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ); HEXFET功率MOSFET（ VDSS = 60V ， RDS （ ON） = 0.018ヘ， ID = 50A ）
| 型号： | IRFZ48RSPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018ヘ , ID = 50A ) |
| 文件： | 总10页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95761
IRFZ48RSPbF
IRFZ48RLPbF
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
HEXFET® Power MOSFET
D
VDSS = 60V
l Fully Avalanche Rated
l Drop in Replacement of the IRFZ48
for Linear/Audio Applications
l Lead-Free
RDS(on) = 0.018Ω
G
ID = 50*A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
D2Pak
IRFZ48RS
TO-262
IRFZ44RL
Absolute Maximum Ratings
Parameter
Max.
50*
Units
ID @ TC = 25°C
D @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
50*
A
IDM
290
PD @TC = 25°C
Power Dissipation
190
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
100
mJ
4.5
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.8
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
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1
08/24/04
IRFZ48RS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.060 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.018
Ω
V
S
VGS = 10V, ID = 43A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 43A
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
27
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 110
––– ––– 29
––– ––– 36
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 72A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13
–––
8.1 –––
VDD = 30V
––– 250 –––
––– 210 –––
––– 250 –––
ID = 72A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 0.34Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
–––
nH
G
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 2400 –––
––– 1300 –––
––– 190 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
pF
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
50*
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 290
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 2.0
––– 120 180
––– 0.50 0.80
V
TJ = 25°C, IS = 72A, VGS = 0V
TJ = 25°C, IF = 72A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 72A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
VDD = 25V, Starting TJ = 25°C, L = 22µH
RG = 25Ω, IAS = 72A. (See Figure 12)
* Current limited by the package, (Die Current = 72A)
2
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IRFZ48RS/LPbF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
72A
I =
D
2.0
1.5
1.0
0.5
0.0
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFZ48RS/LPbF
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
T = 25 C
J
C
°
T = 175 C
Single Pulse
1
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFZ48RS/LPbF
RD
VDS
80
60
40
20
0
LIMITED BY PACKAGE
VGS
10V
D.U.T.
RG
+
-
VDD
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature( C)
10%
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFZ48RS/LPbF
250
200
150
100
50
I
D
15V
TOP
29A
51A
BOTTOM 72A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFZ48RS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ48RS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
AS S EMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WE EK 02
Note: "P" in as sembly line
pos ition indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEEK 02
A = ASSEMBLY SITE CODE
8
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IRFZ48RS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
AS S E MB L Y
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE E K 19
A = ASSEMBLYSITE CODE
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9
IRFZ48RS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
10
www.irf.com
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INFINEON
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