IRFZ48RS_11 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | IRFZ48RS_11 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总9页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
60
Definition
• Advanced Process Technology
RDS(on) ()
VGS = 10 V
0.018
• Dynamic dV/dt
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Drop in Replacement of the IRFZ48, SiHFZ48 for
Linear/Audio Applications
Qg (Max.) (nC)
Qgs (nC)
110
29
Q
gd (nC)
36
Configuration
Single
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
D2PAK (TO-263)
I2PAK (TO-262)
Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
G
G
D
S
D
S
G
S
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D2PAK (TO-263)
SiHFZ48RS-GE3
IRFZ48RSPbF
SiHFZ48RS-E3
I2PAK (TO-262)
-
IRFZ48RLPbF
SiHFZ48RL-E3
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDS
LIMIT
60
20
UNIT
V
VGS
T
C = 25 °C
50
50
290
Continuous Drain Currente
VGS at 10 V
ID
A
T
C = 100 °C
Pulsed Drain Currenta, e
IDM
Linear Derating Factor
W/°C
mJ
W
1.3
100
190
4.5
Single Pulse Avalanche Energyb, e
EAS
PD
dV/dt
TJ, Tstg
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
T
C = 25 °C
V/ns
- 55 to + 175
300d
10
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12).
c. ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 72 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91296
S11-1054-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.50
-
RthCS
-
°C/W
RthJC
0.8
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mAc
VDS = VGS, ID = 250 μA
60
-
-
-
-
V
V/°C
V
VDS Temperature Coefficient
0.60
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
-
4.0
100
25
VGS
VDS = 60 V, VGS = 0 V
DS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 43 Ab
VDS = 25 V, ID = 43 Ab
=
20 V
nA
-
Zero Gate Voltage Drain Current
IDSS
μA
V
-
250
0.018
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
27
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
2400
1300
190
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5c
V
pF
nC
-
110
29
36
-
ID = 72 A, VDS = 48 V,
see fig. 6 and 13b, c
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
8.1
250
210
250
-
VDD = 30 V, ID = 72 A,
ns
Rg = 9.1 , RD = 0.34 , see fig. 10b, c
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
IS
-
-
-
-
50c
290
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 72 A, VGS = 0 Vb
-
-
-
-
2.0
180
0.80
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
120
0.50
ns
μC
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb, c
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Current limited by the package, (die current = 72 A).
www.vishay.com
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Document Number: 91296
S11-1054-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
72A
=
I
D
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
T , Junction Temperature ( C)
J
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics
Document Number: 91296
S11-1054-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
T = 25 C
J
C
°
T = 175 C
Single Pulse
1
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91296
S11-1054-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
RD
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
Rg
+
-
V
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
25
50
75
100
125
150
175
°
, Case Temperature( C)
T
10 %
VGS
C
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91296
S11-1054-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
VDS
15 V
tp
Driver
L
VDS
Rg
D.U.T.
+
-
V
A
DD
IAS
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
250
I
D
TOP
29A
51A
200
150
100
50
BOTTOM 72A
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91296
S11-1054-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91296.
Document Number: 91296
S11-1054-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
0° to 8°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B - B and C - C
Scale: none
View A - A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
-
10.67
-
0.270
0.380
0.245
-
0.420
-
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
-
-
-
-
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
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1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1
相关型号：
IRFZ48STRL
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
INFINEON
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