IRFU9020PBF [VISHAY]
Power MOSFET; 功率MOSFET型号: | IRFU9020PBF |
厂家: | VISHAY |
描述: | Power MOSFET |
文件: | 总9页 (文件大小:1210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Power MOSFET
FEATURES
• Surface Mountable (Order As IRFR9020/SiHFR9020)
PRODUCT SUMMARY
VDS (V)
- 50
Available
• Straight Lead Option (Order As IRFU9020/SiHFU9020)
R
DS(on) (Ω)
VGS = - 10 V
0.28
RoHS*
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
Qg (Max.) (nC)
14
6.5
6.5
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Simple Drive Requirements
• Ease of Paralleling
Configuration
Single
• Lead (Pb)-free Available
S
DESCRIPTION
DPAK
IPAK
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
(TO-252)
(TO-251)
G
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
D
P-Channel MOSFET
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020/SiHFR9020 is provided on 16mm tape. The
straight lead option IRFR9020/SiHFR9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9020PbF
SiHFR9020-E3
IRFR9020
DPAK (TO-252)
DPAK (TO-252)
IRFR9020TRLPbFa
SiHFR9020TL-E3a
IRFR9020TRLa
SiHFR9020TLa
IPAK (TO-251)
IRFU9020PbF
SiHFU9020-E3
IRFU9020
IRFR9020TRPbFa
SiHFR9020T-E3a
IRFR9020TRa
Lead (Pb)-free
SnPb
SiHFR9020
SiHFR9020Ta
SiHFU9020
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
- 50
20
V
VGS
T
C = 25 °C
- 9.9
- 6.3
- 40
0.33
440
- 9.9
4.2
Continuous Drain Current
V
GS at - 10 V
ID
TC =100°C
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
www.vishay.com
1
WORK-IN-PROGRESS
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
42
UNIT
W
Maximum Power Dissipation
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
dV/dt
5.8
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A
c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
110
-
UNIT
Maximum Junction-to-Ambient
Case-to-Sink
RthJA
-
-
-
-
1.7
-
RthCS
°C/W
Maximum Junction-to-Case (Drain)
RthJC
3.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
- 50
-
-
V
V
- 2.0
-
- 4.0
500
250
1000
0.28
-
VGS
VDS = max. rating, VGS = 0 V
= 0.8 x max. rating, V = 0 V, T = 125 °C
=
20 V
-
-
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
-
DS
GS
J
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
ID = 5.7 Ab
-
0.20
3.5
Ω
VDS ≤ - 50 V, IDS = - 5.7 A
2.3
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
490
320
70
-
VGS = 0 V,
V
DS = - 25 V,
-
pF
nC
f = 1.0 MHz, see fig. 9
-
9.4
4.3
4.3
8.2
57
14
6.5
6.5
12
66
18
38
ID = - 9.7 A, VDS = 0.8 x max.
rating, see fig. 16
Qgs
Qgd
td(on)
tr
VGS = - 10 V
(Independent operating
temperature)
V
DD = - 25 V, ID = - 9.7 A,
G = 18 Ω, RD = 2.4 Ω, see fig. 15
(Independent operating temperature)
R
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
12
25
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact.
nH
G
S
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Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
- 9.9
- 40
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = - 9.9 A, VGS = 0 Vb
-
-
- 6.3
280
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
56
110
0.34
ns
nC
TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/µsb
Qrr
ton
0.17
0.85
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Normalized On-Resistance vs. Temperature
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Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 12 - Maximum Drain Current vs. Case Temperature
Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
www.vishay.com
5
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 13b - Unclamped Inductive Test Circuit
IAS
VDS
IL
VDD
tp
VDS
Fig. 13c - Unclamped Inductive Waveforms
Fig. 13a - Maximum Avalanche vs. Starting Junction
Temperature
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
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Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
td(on) tr
td(off) tf
VGS
10 %
90 %
VDS
Fig. 15a - Switching Time Waveforms
Fig. 15b - Switching Time Test Circuit
QG
- 10 V
QGS
QGD
VG
Charge
Fig. 16a - Basic Gate Charge Waveform
Fig. 16b - Gate Charge Test Circuit
Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
www.vishay.com
7
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
+
-
RG
+
-
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
= - 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = - 5 V for logic level and - 3 V drive devices
Fig. 17 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?90350.
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Document Number: 90350
S-Pending-Rev. A, 10-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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