IRFU9022PBF [VISHAY]

Power MOSFET; 功率MOSFET


型号：	IRFU9022PBF
厂家：	VISHAY
描述：	Power MOSFET 功率MOSFET
文件：	总9页 (文件大小：1210K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

•

Surface Mountable (Order as IRFR9022/SiHFR9022)

- 50

Available

•

Straight Lead Option (Order as IRFU9022/SiHFU9022)

_DS(on)(Ω)

V_GS= - 10 V

0.33

RoHS*

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

6.5

COMPLIANT

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Ease of Paralleling

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

DPAK

IPAK

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance combined

with high transconductance; superior reverse energy and

diode recovery dV/dt.

(TO-252)

(TO-251)

The Power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

P-Channel MOSFET

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The TO-252

surface mount package brings the advantages of Power

MOSFET’s to high volume applications where PC Board

surface mounting is desirable. The surface mount option

IRFR9022/SiHFR9022 is provided on 16mm tape. The

straight lead option IRFR9022/SiHFR9022 of the device is

called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9022PbF

SiHFR9022-E3

IRFR9022

DPAK (TO-252)

IRFR9022TRLPbF^a

SiHFR9022TL-E3^a

IRFR9022TRL^a

SiHFR9022TL^a

IPAK (TO-251)

IRFU9022PbF

SiHFU9022-E3

IRFU9022

IRFR9022TRPbF^a

SiHFR9022T-E3^a

IRFR9022TR^a

Lead (Pb)-free

SnPb

SiHFR9022

SiHFR9022T^a

SiHFU9022

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 50

V_GS

_C= 25 °C

- 9.0

- 5.7

- 36

0.33

440

- 9.9

4.2

Continuous Drain Current

_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

www.vishay.com

WORK-IN-PROGRESS

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

5.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. V_DD= - 25 V, Starting T_J= 25 °C, L = 5.1 mH, R_G= 25 Ω, Peak I_L= - 9.9 A

c. I_SD≤ - 9.9 A, dI/dt ≤ -120 A/µs, V_DD≤ 40 V, T_J≤ 150 °C.

d. 0.063" (1.6 mm) from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

110

UNIT

Maximum Junction-to-Ambient

Case-to-Sink

R_thJA

1.7

R_thCS

°C/W

Maximum Junction-to-Case (Drain)

R_thJC

3.0

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Source Leakage

V_DS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= - 250 µA

V_DS= V_GS, I_D= - 250 µA

- 50

- 2.0

- 4.0

500

250

1000

0.33

V_GS

V_DS= max. rating, V_GS= 0 V

= 0.8 x max. rating, V = 0 V, T = 125 °C

20 V

Zero Gate Voltage Drain Current

I_DSS

µA

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

R_DS(on)

g_fs

V_GS= - 10 V

I_D= 5.7 A^b

0.28

3.5

V_DS≤ - 50 V, I_DS= - 5.7 A

2.3

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

C_iss

C_oss

C_rss

Q_g

490

320

V_GS= 0 V,

_DS= - 25 V,

f = 1.0 MHz, see fig. 9

9.4

4.3

8.2

6.5

I_D= - 9.7 A, V_DS= 0.8 x max.

rating, see fig. 16

Q_gs

Q_gd

t_d(on)

t_r

V_GS= - 10 V

(Independent operating

temperature)

_DD= - 25 V, I_D= - 9.7 A,

_G= 18 Ω, R_D= 2.4 Ω, see fig. 15

(Independent operating temperature)

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

Between lead,

Internal Drain Inductance

Internal Source Inductance

L_D

L_S

4.5

7.5

6 mm (0.25") from

package and center of

die contact.

www.vishay.com

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain-Source Body Diode Characteristics

MOSFET symbol

showing the

integral reverse

p - n junction diode

Continuous Source-Drain Diode Current

Pulsed Diode Forward Current^a

I_S

- 9.9

- 40

I_SM

Body Diode Voltage

V_SD

t_rr

T_J= 25 °C, I_S= - 9.9 A, V_GS= 0 V^b

- 6.3

280

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

110

0.34

T_J= 25 °C, I_F= - 9,7 A, dI/dt = 100 A/µs^b

Q_rr

t_on

0.17

0.85

Intrinsic turn-on time is negligible (turn-on is dominated by L_Sand L_D)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Saturation Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 4 - Maximum Safe Operating Area

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

www.vishay.com

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

Fig. 5 - Typical Transconductance vs. Drain Current

Fig. 7 - Breakdown Voltage vs. Temperature

Fig. 6 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Normalized On-Resistance vs. Temperature

www.vishay.com

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 11 - Typical On-Resistance vs. Drain Current

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 12 - Maximum Drain Current vs. Case Temperature

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

www.vishay.com

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

Fig. 13b - Unclamped Inductive Test Circuit

I_AS

V_DS

I_L

V_DD

t_p

V_DS

Fig. 13c - Unclamped Inductive Waveforms

Fig. 13a - Maximum Avalanche vs. Starting Junction

Temperature

Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

www.vishay.com

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

t_d(on)t_r

t_d(off)t_f

V_GS

10 %

90 %

V_DS

Fig. 15a - Switching Time Waveforms

Fig. 15b - Switching Time Test Circuit

Q_G

- 10 V

Q_GS

Q_GD

V_G

Charge

Fig. 16a - Basic Gate Charge Waveform

Fig. 16b - Gate Charge Test Circuit

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

www.vishay.com

IRFR9022, IRFU9022, SiHFR9022, SiHFU9022

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R_G

• dV/dt controlled by R_G

• I_SDcontrolled by duty factor "D"

• D.U.T. - device under test

V_DD

Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D =

P.W.

= - 10 V*

D.U.T. I waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. V waveform

Diode recovery

dV/dt

Re-applied

voltage

Body diode forward drop

Ripple ≤ 5 %

Inductor current

* V_GS= - 5 V for logic level and - 3 V drive devices

Fig. 17 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91349.

www.vishay.com

Document Number: 91349

S-Pending-Rev. A, 10-Jun-08

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

IRFU9022PBF [VISHAY]

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