HFA08TB120S [VISHAY]
Ultrafast Soft Recovery Diode, 8 A; 超快软恢复二极管，一个8
| 型号： | HFA08TB120S |
| 厂家： | 
VISHAY |
| 描述： | Ultrafast Soft Recovery Diode, 8 A |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HFA08TB120S
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
Base
cathode
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
3
1
N/C
Anode
• Reduced parts count
D2PAK
DESCRIPTION
HFA08TB120S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 8 A continuous current, the
HFA08TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
VR
1200 V
3.3 V
VF at 8 A at 25 °C
IF(AV)
8 A
trr (typical)
28 ns
TJ (maximum)
150 °C
140 nC
85 A/µs
4.5 A
Q
rr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
1200
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
8
IFSM
IFRM
130
32
A
Maximum repetitive forward current
TC = 25 °C
73.5
Maximum power dissipation
PD
W
T
C = 100 °C
29
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 93043
Revision: 22-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
HFA08TB120S
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
1200
-
-
IF = 8.0 A
IF = 16 A
-
-
-
-
-
-
-
2.6
3.4
2.4
0.31
135
11
3.3
4.3
3.1
10
V
Maximum forward voltage
VFM
IF = 8.0 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
µA
TJ = 125 °C, VR = 0.8 x VR rated
1000
20
Junction capacitance
Series inductance
CT
LS
VR = 200 V
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
-
-
28
Reverse recovery time
trr1
63
95
160
8.0
11
380
880
-
ns
trr2
TJ = 125 °C
106
4.5
6.2
140
335
133
85
IRRM1
IRRM2
Qrr1
TJ = 25 °C
Peak recovery current
A
IF = 8.0 A
TJ = 125 °C
dIF/dt = 200 A/µs
TJ = 25 °C
V
R = 200 V
Reverse recovery charge
nC
Qrr2
TJ = 125 °C
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
Peak rate of fall of
recovery current during tb
A/µs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
1.7
40
K/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
Marking device
Case style D2PAK
HFA08TB120S
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95046
http://www.vishay.com/doc?95054
http://www.vishay.com/doc?95032
Part marking information
Packaging information
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93043
Revision: 22-Oct-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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