BYG22B [VISHAY]
Super Fast Silicon Mesa SMD Rectifier; 超快速硅梅萨贴片整流型号: | BYG22B |
厂家: | VISHAY |
描述: | Super Fast Silicon Mesa SMD Rectifier |
文件: | 总5页 (文件大小:62K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYG22
Vishay Telefunken
Super Fast Silicon Mesa SMD Rectifier
Features
Controlled avalanche characteristic
Glass passivated junction
Low reverse current
Low forward voltage
Soft recovery characteristic
Very fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
15 811
Applications
Surface mounting
Super fast rectifier
Freewheeling diodes in SMPS and converters
Snubber diodes
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Type
Symbol
Value
50
100
200
35
Unit
V
V
V
A
BYG22A
BYG22B
BYG22D
V =V
R
RRM
RRM
RRM
V =V
R
V =V
R
Peak forward surge current
Average forward current
Junction and storage
temperature range
t =10ms,
half sinewave
I
p
FSM
I
2
A
C
FAV
T =T
–55...+150
j
stg
Pulse energy in avalanche mode,
non repetitive
I
=1A, T =25 C
E
R
20
mJ
(BR)R
j
(inductive load switch off)
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction lead
Junction ambient mounted on epoxy–glass hard tissue
Test Conditions
Symbol Value
Unit
K/W
K/W
K/W
K/W
T =const.
L
R
25
thJL
thJA
thJA
thJA
R
R
R
150
125
100
2
mounted on epoxy–glass hard tissue, 50mm 35 m Cu
2
mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu
2
3
Document Number 86011
Rev. 3, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BYG22
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
I =1A
V
V
1
1.1
1
10
25
V
V
A
A
ns
F
F
F
I =2A
F
Reverse current
V =V
I
I
R
RRM
R
V =V
, T =100 C
R
RRM
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A
t
rr
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)
100
100
10
10
T =125°C
j
75°C
1
1
V =V
R
25°C
R RM
0.1
0.01
0.1
0.01
200
3.0
0
40
80
120
160
0
0.6
1.2
1.8
2.4
94 9347
T – Junction Temperature ( °C )
j
94 9352
V – Forward Voltage ( V )
F
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 3. Max. Forward Current vs. Forward Voltage
140
T
=125°C
amb
2.0
1.6
120
100
80
60
40
20
0
100°C
R
thJA
=25K/W
75°C
50°C
1.2
0.8
0.4
0
100K/W
125K/W
25°C
150K/W
I =0.5A, i =0.125A
R
R
200
1.0
0
40
80
120
160
0
0.2
0.4
0.6
0.8
94 9351
T
amb
– Ambient Temperature ( °C )
94 9353
I – Forward Current ( A )
F
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Max. Reverse Recovery Time vs.
Forward Current
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86011
Rev. 3, 24-Jun-98
2 (5)
BYG22
Vishay Telefunken
60
50
40
30
20
10
0
T
=125°C
amb
100°C
75°C
50°C
25°C
I =0.5A, i =0.125A
R
R
1.0
0
0.2
0.4
0.6
0.8
94 9354
I – Forward Current ( A )
F
Figure 5. Max. Reverse Recovery Charge vs.
Forward Current
1000
125K/W DC
100
t /T=0.5
p
t /T=0.2
p
t /T=0.1
p
10
1
t /T=0.05
p
t /T=0.02
p
Single Pulse
t /T=0.01
p
–5
–4
–3
–2
–1
0
1
2
10
10
10
10
10
10
10
10
94 9339
t – Pulse Length ( s )
p
Figure 6. Thermal Response
Document Number 86011
Rev. 3, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
BYG22
Vishay Telefunken
Dimensions in mm
14275
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86011
Rev. 3, 24-Jun-98
4 (5)
BYG22
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86011
Rev. 3, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
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