BYG22B-E3/TR3 [VISHAY]
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode;型号: | BYG22B-E3/TR3 |
厂家: | VISHAY |
描述: | DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode 超快软恢复二极管 快速软恢复二极管 局域网 光电二极管 |
文件: | 总5页 (文件大小:99K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMA (DO-214AC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
TYPICAL APPLICATIONS
VRRM
50 V, 100 V, 200 V
35 A
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
IFSM
IR
VF at IF
trr
1.0 μA
1.1 V
MECHANICAL DATA
25 ns
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
ER
20 mJ
TJ max.
Package
Diode variations
150 °C
SMA (DO-214AC)
Single
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meet JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG22A
BYG22A
50
BYG22B
BYG22B
100
BYG22D
BYG22D
200
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
V
A
2.0
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
35
A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
ER
20
mJ
°C
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range TJ, TSTG
-55 to +150
Revision: 17-Aug-17
Document Number: 88959
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
BYG22A
BYG22B
BYG22D
UNIT
IF = 1.0 A
IF = 2.0 A
1.0
1.1
1
Maximum instantaneous
(1)
TJ = 25 °C
VF
V
forward voltage
TJ = 25 °C
Maximum reverse current
VR = VRRM
IR
trr
µA
ns
TJ = 100 °C
10
25
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG22A
BYG22B
25
BYG22D
UNIT
Maximum thermal resistance, junction to lead, TL = const.
RJL
°C/W
(1)
RJA
150
(2)
Maximum thermal resistance, junction to ambient
RJA
125
°C/W
(3)
RJA
100
Notes
(1)
Mounted on epoxy-glass hard tissue
Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
1800
DELIVERY MODE
BYG22D-E3/TR
0.064
TR
TR3
H
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
BYG22D-E3/TR3
BYG22DHE3_A/H (1)
BYG22DHE3_A/I (1)
BYG22D-M3/TR
0.064
7500
0.064
1800
0.064
I
7500
0.064
TR
TR3
H
1800
BYG22D-M3/TR3
BYG22DHM3_A/H (1)
BYG22DHM3_A/I (1)
0.064
7500
0.064
1800
0.064
I
7500
Note
(1) AEC-Q101 qualified
Revision: 17-Aug-17
Document Number: 88959
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
50
40
30
20
10
0
VR = VRRM
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
PR - Limit
at 100 % VR
PR - Limit
at 80 % VR
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
25
50
75
100
125
150
Forward Voltage (V)
Junction Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
2.5
2.0
1.5
1.0
0.5
0
70
VR = VRRM
Half Sine-Wave
f = 1 MHz
60
50
40
30
20
10
0
RθJA ≤ 25 K/W
RθJA ≤ 125 K/W
RθJA ≤ 150 K/W
0
20
40
60
80
100
120
140
160
0.1
1
10
100
Reverse Voltage (V)
Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
100
140
120
100
80
TA = 125 °C
VR = VRRM
TA = 100 °C
TA = 75 °C
TA = 50 °C
10
60
40
TA = 25 °C
20
IR = 0.5 A, iR = 0.125 A
1
0
25
50
75
100
re (°C)
125
150
0
0.4
0.6
0.8
0.2
1.0
Junction Temperatu
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
Revision: 17-Aug-17
Document Number: 88959
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
60
50
40
30
20
10
0
1000
TA = 125 °C
TA = 100 °C
125 K/W DC
100
10
1
tp/T = 0.5
TA = 75 °C
TA = 50 °C
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
TA = 25 °C
Single Pulse
tp/T = 0.01
IR = 0.5 A, iR = 0.125 A
10-5
10-4
10-3
10-2
Pulse Length (s)
10-1
100
101
102
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
Fig. 8 - Thermal Response
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 17-Aug-17
Document Number: 88959
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号:
BYG22B-HE3/TR
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
BYG22B-HE3/TR3
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
BYG22B-M3/TR
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
BYG22B-M3/TR3
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
BYG22BHE3/TR
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
BYG22BHE3/TR3
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
BYG22BHM3/TR3
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
BYG22BHM3_A/H
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明