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BYG22B-E3 [VISHAY]

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214, PLASTIC, SIMILAR TO SMA, 2 PIN, Rectifier Diode;
BYG22B-E3
型号： BYG22B-E3
厂家： VISHAY    VISHAY
描述：

DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214, PLASTIC, SIMILAR TO SMA, 2 PIN, Rectifier Diode

超快速软恢复二极管 局域网 光电二极管
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BYG22  
Vishay Semiconductors  
VISHAY  
Ultra Fast Avalanche SMD Rectifier  
Features  
• Controlled avalanche characteristic  
• Glass passivated junction  
• Low reverse current  
• Low forward voltage  
• Soft recovery characteristic  
• Very fast reverse recovery time  
• Good switching characteristics  
• Wave and reflow solderable  
15811  
Applications  
Surface mounting  
Super fast rectifier  
Freewheeling diodes in SMPS and converters  
Snubber diodes  
Parts Table  
Part  
Type differentiation  
VR = 50 V @ IFAV = 2 A  
Package  
BYG22A  
BYG22B  
BYG22D  
DO-214AC  
V
V
R = 100 V @ IFAV = 2 A  
R = 200 V @ IFAV = 2 A  
DO-214AC  
DO-214AC  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
Value  
50  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
BYG22A  
VR = VRRM  
BYG22B  
BYG22D  
VR = VRRM  
100  
V
200  
35  
V
A
Peak forward surge current  
Average forward current  
tp = 10 ms, half sinewave  
IFSM  
IFAV  
2
A
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 150  
°C  
Pulse energy in avalanche  
mode, non repetitive (inductive  
load switch off)  
I
(BR)R = 1 A, Tj = 25 °C  
ER  
20  
mJ  
Document Number 86011  
Rev. 1.5, 09-Oct-00  
www.vishay.com  
1
BYG22  
Vishay Semiconductors  
VISHAY  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction lead  
Junction ambient  
Test condition  
Part  
Symbol  
RthJL  
Value  
25  
Unit  
K/W  
TL = const.  
mounted on epoxy-glass hard  
tissue  
RthJA  
RthJA  
RthJA  
150  
K/W  
mounted on epoxy-glass hard  
tissue, 50 mm2 35 µm Cu  
mounted on Al-oxid-ceramic  
(Al2O3), 50 mm2 35 µm Cu  
125  
K/W  
100  
K/W  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
VF  
Min  
Typ.  
Max  
1
Unit  
V
Forward voltage  
IF = 1 A  
IF = 2 A  
VF  
IR  
IR  
trr  
1.1  
1
V
Reverse current  
V
V
R = VRRM  
R = VRRM, Tj =100 °C  
µA  
µA  
ns  
10  
25  
Reverse recovery time  
IF = 0.5 A, IR = 1 A, iR = 0.25 A  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
10.000  
1.000  
0.100  
0.010  
0.001  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V =V  
half sinewave  
R
RRM  
T =150°C  
j
R
=25K/W  
thJA  
T =25°C  
j
R
R
+125K/W  
+150K/W  
thJA  
thJA  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
– Forward Voltage ( V )  
0
20 40 60 80 100 120 140 160  
– Ambient Temperature ( °C )  
16448  
V
F
16449  
T
amb  
Figure 1. Forward Current vs. Forward Voltage  
Figure 2. Max. Average Forward Current vs. Ambient Temperature  
www.vishay.com  
2
Document Number 86011  
Rev. 1.5, 09-Oct-00  
BYG22  
Vishay Semiconductors  
VISHAY  
140  
120  
100  
80  
T
amb  
=125°C  
100  
V
R
= V  
RRM  
100°C  
75°C  
50°C  
10  
60  
40  
25°C  
20  
0
I =0.5A, i =0.125A  
R
R
1
1.0  
0
0.2  
0.4  
0.6  
0.8  
25  
50  
75  
100  
125  
150  
I
F
– Forward Current ( A )  
16450  
T – Junction Temperature ( °C )  
j
94 9353  
Figure 3. Reverse Current vs. Junction Temperature  
Figure 6. Max. Reverse Recovery Time vs. Forward Current  
60  
50  
T
=125°C  
amb  
V
= V  
RRM  
R
50  
40  
30  
20  
100°C  
40  
30  
20  
10  
0
75°C  
50°C  
P –Limit  
R
@100%V  
R
25°C  
P –Limit  
R
@80%V  
R
10  
0
I =0.5A, i =0.125A  
R
R
1.0  
0
0.2  
0.4  
0.6  
0.8  
25  
50  
75  
100  
125  
150  
I
F
– Forward Current ( A )  
16451  
T – Junction Temperature ( °C )  
j
94 9354  
Figure 4. Max. Reverse Power Dissipation vs. Junction  
Temperature  
Figure 7. Max. Reverse Recovery Charge vs. Forward Current  
70  
f=1MHz  
60  
50  
40  
30  
20  
10  
0
0.1  
1.0  
V – Reverse Voltage ( V )  
R
10.0  
100.0  
16452  
Figure 5. Diode Capacitance vs. Reverse Voltage  
Document Number 86011  
Rev. 1.5, 09-Oct-00  
www.vishay.com  
3
BYG22  
Vishay Semiconductors  
VISHAY  
1000  
125K/W DC  
100  
t /T=0.5  
p
t /T=0.2  
p
t /T=0.1  
p
10  
1
t /T=0.05  
p
t /T=0.02  
p
Single Pulse  
t /T=0.01  
p
–5  
–4  
–3  
–2  
–1  
0
1
2
10  
10  
10  
10  
10  
– Pulse Length ( s )  
10  
10  
10  
t
p
94 9339  
Figure 8. Thermal Response  
Package Dimensions in mm (Inches)  
5.3 +0.2 / -0.4  
4.4 +0.1 / -0.2  
ISO Method E  
technical drawings  
according to DIN  
specifications  
0.2  
0.1 0.07  
3 +0.3 / -0.5  
Plastic case JEDEC DO 214  
similar to SMA  
Cathode indicated by a band  
14275-1  
www.vishay.com  
4
Document Number 86011  
Rev. 1.5, 09-Oct-00  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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