BS870/E6 [VISHAY]

Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN;


型号：	BS870/E6
厂家：	VISHAY
描述：	Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN
文件：	总5页 (文件大小：259K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BS870

DMOS Transistors (N-Channel)

TO-263AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

Mounting Pad Layout

Pin Configuration

1. Gate

2. Source

3. Drain

0.037 (0.95)

0.079 (2.0)

.037(0.95)

0.035 (0.9)

0.031 (0.8)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Di_Dm_ime_en_ns_si_ioo_nn_ss_inin_incin_hec_sh_ae_ns_da_(mn_id_llim(m_eteil_rl_sim₎eters)

Features

Mechanical Data

• High input impedance

Case: SOT-23 Plastic Package

• High-speed switching

Weight: approx. 0.008g

• No minority carrier storage time

• CMOS logic compatible input

• No thermal runaway

Packaging Codes/Options:

E6/Bulk- 5K per container, 20K/box

E7/4K per Ammo tape, 20K/box

• No secondary breakdown

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DSS

V_DGS

V_GS

Limit

Unit

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source-Voltage (pulsed)

Drain Current (continuous)

Power Dissipation at T_SB= 50°C

I_D

250

P_tot

0.310¹⁾

Thermal Resistance Junction to Substrate

Backside

R_thSB

320¹⁾

°C/W

Thermal Resistance Junction to Ambiant Air

Junction Temperature

R_thJA

T_j

450¹⁾

150

°C/W

°C

Storage Temperature Range

T_S

-65 to +150

°C

Note:

(1) Ceramic Substrate 0.7 mm; 2.5 cm²area.

5/5/00

BS870

DMOS Transistors (N-Channel)

Electrical Characteristics(T_J= 25°C unless otherwise noted)

Parameter

Symbol

V_(BR)DSS

V_GS(th)

I_GSS

Test Condition

I_D= 100µA, V_GS= 0

V_GS= V_DS, I_D= 1mA

V_GS= 15V, V_DS= 0V

V_DS= 25V, V_GS= 0V

V_GS= 10V, I_D= 200mA

Min

1.0

—

Typ

Max

—

Unit

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage Current

Drain Cutoff Current

2.0

—

3.0

µA

Ω

I_DSS

—

0.5

5.0

Drain-Source On-State Resistance

R_DS(on)

—

3.5

V_DS= 10V, I_D= 200mA,

f = 1MHz

Forward Transconductance

Input Capacitance

g_m

—

200

—

V_DS= 10V, V_GS= 0

f = 1MHz

C_iss

Turn-On Time

Turn-Off Time

t_on

t_off

—

V_GS= 10V, V_DS= 10V

R_D= 100Ω

Note:

(1)Device on fiberglass substrate, see layout

Inverse Diode

Parameter

Symbol

Test Condition

T_amb= 25 °C

Value

Unit

Max. Forward Current (continuous)

I_F

0.3

V_GS= 0V, I_F= 0.3A

Forward Voltage Drop (typ.)

V_F

0.85

°C

T_j= 25

Layout for R

test

thJA

Thickness: Fiberglass 0.059 in. (1.5 mm)

0.30 (7.5)

Copper leads 0.012 in. (0.3 mm)

0.12 (3)

.04 (1)

.08 (2)

.04 (1)

.08 (2)

0.59 (15)

0.03 (0.8)

0.47 (12)

0.2 (5)

Dimensions in inches and (millimeters)

0.06 (1.5)

0.20 (5.1)

BS870

DMOS Transistors (N-Channel)

Ratings and

Characteristic Curves(T_A= 25°C unless otherwise noted)

BS870

DMOS Transistors (N-Channel)

Ratings and

Characteristic Curves(T_A= 25°C unless otherwise noted)

BS870

DMOS Transistors (N-Channel)

Ratings and

Characteristic Curves(T_A= 25°C unless otherwise noted)

BS870

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