BS870/E9 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 250MA I(D) | SOT-23 ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 250MA I（ D） | SOT- 23\n
| 型号： | BS870/E9 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 250MA I(D) | SOT-23
|
| 文件： | 总5页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BS870
Vishay Semiconductors
formerly General Semiconductor
DMOS Transistor (N-Channel)
TO-236AB (SOT-23)
0.031 (0.8)
0.035 (0.9)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
0.079 (2.0)
Pin Configuration
1. Gate
2. Source
3. Drain
0.037 (0.95)
1
2
0.037 (0.95)
.037(0.95)
.037(0.95)
Mounting Pad Layout
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Features
Mechanical Data
• High input impedance
Case: SOT-23 Plastic Package
• High-speed switching
Weight: approx. 0.008g
• No minority carrier storage time
• CMOS logic compatible input
• No thermal runaway
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
• No secondary breakdown
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
VDSS
VDGS
VGS
Limit
Unit
V
Drain-Source Voltage
Drain-Gate Voltage
60
60
V
±
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at TSB = 50°C
20
V
ID
250
mA
W
Ptot
0.310(1)
Thermal Resistance Junction to Substrate
Backside
RθSB
320(1)
°C/W
Thermal Resistance Junction to Ambient Air
Junction Temperature
RθJA
Tj
450(1)
150
°C/W
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Ceramic Substrate 0.7mm; 2.5 cm2 area
Document Number 88182
10-May-02
www.vishay.com
1
BS870
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
V(BR)DSS
VGS(th)
IGSS
Test Condition
ID = 100µA, VGS = 0
VGS = VDS, ID = 1mA
VGS = 15V, VDS = 0V
VDS = 25V, VGS = 0V
VGS = 10V, ID = 200mA
Min
60
1.0
—
Typ
80
Max
—
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Cutoff Current
V
2.0
—
3.0
10
nA
µA
Ω
IDSS
—
—
0.5
5.0
Drain-Source On-State Resistance
RDS(on)
—
3.5
VDS = 10V, ID = 200mA,
f = 1MHz
Forward Transconductance
Input Capacitance
gm
—
—
200
30
—
—
mS
pF
VDS = 10V, VGS = 0
f = 1MHz
Ciss
Turn-On Time
Turn-Off Time
ton
toff
—
—
5
—
—
ns
ns
VGS = 10V, VDS = 10V
RD = 100Ω
25
Note:
(1)Device on fiberglass substrate, see layout
Inverse Diode
Parameter
Symbol
Test Condition
Tamb = 25 °C
Value
Unit
Max. Forward Current (continuous)
IF
0.3
A
VGS= 0V, IF = 0.3A
Forward Voltage Drop (typ.)
VF
0.85
V
°C
Tj = 25
Layout for R
test
thJA
Thickness: Fiberglass 0.059 in. (1.5 mm)
0.30 (7.5)
Copper leads 0.012 in. (0.3 mm)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.47 (12)
0.03 (0.8)
0.2 (5)
Dimensions in inches and (millimeters)
0.06 (1.5)
0.20 (5.1)
www.vishay.com
2
Document Number 88182
10-May-02
BS870
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
BS870
BS870
˚
˚
BS870
BS870
˚
˚
Document Number 88182
10-May-02
www.vishay.com
3
BS870
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
BS870
BS870
˚
˚
BS870
BS870
˚
˚
www.vishay.com
4
Document Number 88182
10-May-02
BS870
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
BS870
BS870
˚
BS870
BS870
˚
Document Number 88182
10-May-02
www.vishay.com
5
相关型号：
BS870T7-7
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
DIODES
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