BS870_08 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | BS870_08 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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•
•
•
•
•
Low On-Resistance
•
•
Case: SOT-23
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
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•
•
•
•
•
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Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
SOT-23
D
Gate
TOP VIEW
S
G
Source
Equivalent Circuit
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
Value
60
Units
V
VDSS
VDGR
VGSS
ID
60
V
Drain-Gate Voltage RGS ≤ 1.0MΩ
Gate-Source Voltage
Continuous
Continuous
V
±20
250
Drain Current (Note 1)
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Value
300
417
Units
mW
°C/W
°C
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
⎯
⎯
80
⎯
⎯
V
BVDSS
IDSS
⎯
0.5
±10
VGS = 0V, ID = 100μA
VDS = 25V, VGS = 0V
VGS = ±15V, VDS = 0V
µA
nA
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
1.0
⎯
⎯
2.0
3.5
1.0
⎯
3.0
5.0
0.5
⎯
V
Ω
A
VGS(th)
RDS (ON)
ID(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.2A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
80
mS
gFS
22
11
50
25
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2.0
5.0
2.0
5.0
20
20
ns
ns
tD(ON)
⎯
⎯
VES = 10V, RL = 150Ω,
VDS = 10V, RD = 100Ω
Turn-Off Delay Time
tD(OFF)
Notes:
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
1 of 3
www.diodes.com
May 2008
© Diodes Incorporated
BS870
Document number: DS11302 Rev. 14 - 2
BS870
7
6
5
1.0
0.8
0.6
0.4
0.2
0
4
3
2
1
0
2
0
1
4
5
3
0
0.2
0.4
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
0.6
0.8
1.0
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
2.0
1.5
6
5
4
3
2
1.0
0.5
0
1
0
0
2
4
6
8
10 12 14 16 18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
70
Tj, JUNCTION TEMPERATURE (
Fig. 3 On-Resistance vs. Junction Temperature
-55 -30
-5
20
45
95
120 145
C)
°
400
350
300
250
200
150
100
50
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Max Power Dissipation vs. Ambient Temperature
50
150 175 200
0
100 125
75
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www.diodes.com
May 2008
© Diodes Incorporated
BS870
Document number: DS11302 Rev. 14 - 2
BS870
Ordering Information (Note 5)
Part Number
Case
Packaging
BS870-7-F
SOT-23
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Kxx = Product Type Marking Code, K70 or K6Z
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004 2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Package Outline Dimensions
A
SOT-23
Min
Dim
A
B
C
D
F
G
H
J
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
C
B
TOP VIEW
G
H
K
J
M
K
L
M
L
F
D
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
G
X
Y
C
E
3.4
0.7
0.9
1.4
2.0
0.9
Z
G
C
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
3 of 3
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May 2008
© Diodes Incorporated
BS870
Document number: DS11302 Rev. 14 - 2
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