BF998A-GS08 [VISHAY]

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管,耗尽型
BF998A-GS08
型号: BF998A-GS08
厂家: VISHAY    VISHAY
描述:

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N沟道双栅MOS -场效应四极管,耗尽型

晶体 晶体管 功率场效应晶体管 光电二极管 栅 放大器
文件: 总10页 (文件大小:319K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Not for new design, this product will be obsoleted soon  
BF998/BF998R/BF998RW  
Vishay Semiconductors  
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode  
2
1
Features  
SOT143  
• Integrated gate protection diodes  
• Low noise figure  
3
4
e3  
• Low feedback capacitance  
• High cross modulation performance  
• Low input capacitance  
• High AGC-range  
2
1
SOT143R  
SOT343R  
• High gain  
4
3
2
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
4
3
19216  
Applications  
• Input and mixer stages in UHF tuners  
Electrostatic sensitive device.  
Observe precautions for handling.  
Mechanical Data  
Typ: BF998  
Pinning:  
Case: SOT143 Plastic case  
Weight: approx. 8.0 mg  
Marking: MO  
1 = Source, 2 = Drain,  
3 = Gate 2, 4 = Gate 1  
Typ: BF998RW  
Pinning:  
Case: SOT343R Plastic case  
Weight: approx. 6.0 mg  
Marking: WMO  
1 = Source, 2 = Drain,  
3 = Gate 2, 4 = Gate 1  
Typ: BF998R  
Pinning:  
Case: SOT143R Plastic case  
Weight: approx. 8.0 mg  
Marking: MOR  
1 = Source, 2 = Drain,  
3 = Gate 2, 4 = Gate 1  
Parts Table  
Part  
Ordering code  
BF998A-GS08  
BF998A-GS08  
BF998RA-GS08  
BF998RA-GS08  
Type Marking  
MO  
Remarks  
BF998  
SOT143  
SOT143  
BF998A  
BF998R  
BF998RA  
MO  
MOR  
SOT143R  
SOT143R  
MOR  
BF998RAW-GS08 or  
BF998RBW-GS08  
BF998RW  
WMO  
SOT343R  
BF998RAW-GS08  
BF998RBW-GS08  
WMO  
WMO  
SOT343R  
SOT343R  
BF998RAW  
BF998RBW  
Document Number 85011  
Rev. 1.8, 05-Sep-08  
www.vishay.com  
1
BF998/BF998R/BF998RW  
Vishay Semiconductors  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VDS  
Value  
12  
Unit  
V
Drain - source voltage  
Drain current  
ID  
30  
mA  
Gate 1/Gate 2 - source peak  
current  
IG1/G2SM  
10  
mA  
Gate 1/Gate 2 - source voltage  
Total power dissipation  
VG1S/G2S  
Ptot  
7
200  
V
mW  
°C  
Tamb 60 °C  
Channel temperature  
TCh  
150  
Storage temperature range  
Tstg  
- 65 to + 150  
°C  
Thermal Characteristics  
Parameter  
Test condition  
Symbol  
RthChA  
Value  
450  
Unit  
K/W  
1)  
Channel ambient  
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu  
Electrical DC Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Part  
Symbol  
V(BR)DS  
Min.  
12  
Typ.  
Max.  
Unit  
V
Drain - source breakdown  
voltage  
ID = 10 μA, - VG1S = - VG2S = 4 V  
Gate 1 - source breakdown  
voltage  
I
I
G1S = 10 mA, VG2S = VDS = 0  
G2S = 10 mA, VG1S = VDS = 0  
V(BR)G1SS  
V(BR)G2SS  
7
7
14  
14  
V
V
Gate 2 - source breakdown  
voltage  
V
G1S = 5 V, VG2S = VDS = 0  
G2S = 5 V, VG1S = VDS = 0  
IG1SS  
IG2SS  
Gate 1 - source leakage current  
Gate 2 - source leakage current  
50  
50  
nA  
nA  
V
BF998/  
BF998R/  
BF998RW  
IDSS  
4
18  
mA  
mA  
V
DS = 8 V, VG1S = 0, VG2S = 4 V  
BF998A/  
BF998RA/  
BF998RAW  
Drain current  
IDSS  
4
10.5  
IDSS  
BF998RBW  
9.5  
18  
2.0  
1.0  
mA  
V
VDS = 8 V, VG2S = 4 V, ID = 20 μA  
VDS = 8 V, VG1S = 0, ID = 20 μA  
- VG1S(OFF)  
- VG2S(OFF)  
Gate 1 - source cut-off voltage  
Gate 2 - source cut-off voltage  
1.0  
0.6  
V
Electrical AC Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz  
Parameter  
Forward transadmittance  
Gate 1 input capacitance  
Gate 2 input capacitance  
Feedback capacitance  
Output capacitance  
Test condition  
Symbol  
|y21s  
Min.  
21  
Typ.  
24  
Max.  
Unit  
|
mS  
pF  
pF  
fF  
Cissg1  
Cissg2  
Crss  
2.1  
1.1  
25  
2.5  
VG1S = 0, VG2S = 4 V  
Coss  
1.05  
pF  
www.vishay.com  
2
Document Number 85011  
Rev. 1.8, 05-Sep-08  
BF998/BF998R/BF998RW  
Vishay Semiconductors  
Parameter  
Test condition  
S = 2 mS, GL = 0.5 mS,  
f = 200 MHz  
Symbol  
Gps  
Min.  
Typ.  
28  
Max.  
Unit  
dB  
G
G
Power gain  
AGC range  
S = 3,3 mS, GL = 1 mS,  
f = 800 MHz  
Gps  
ΔGps  
F
16.5  
40  
20  
dB  
dB  
dB  
VG2S = 4 to -2 V, f = 800 MHz  
GS = 2 mS, GL = 0.5 mS,  
f = 200 MHz  
1.0  
1.5  
Noise figure  
GS = 3,3 mS, GL = 1 mS,  
F
dB  
f = 800 MHz  
Common Source S-Parameters  
T
= 25 °C, unless otherwise specified  
amb  
VDS = 8 V, VG2S = 4 V, Z0 = 50 Ω  
ID/mA  
f/MHz  
S11  
S21  
S12  
S22  
LOG  
MAG  
ANG  
deg  
LOG  
MAG  
ANG  
deg  
LOG  
MAG  
ANG  
deg  
LOG  
MAG  
ANG  
deg  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
100  
200  
300  
400  
500  
600  
700  
800  
900  
- 0.03  
- 0.15  
- 0.34  
- 0.70  
- 1.03  
- 1.33  
- 1.62  
- 1.92  
- 2.21  
- 2.49  
- 2.80  
- 3.07  
- 3.31  
- 0.05  
- 0.16  
- 0.48  
- 0.76  
- 1.11  
- 1.43  
- 1.75  
- 2.07  
- 2.40  
- 2.70  
- 3.03  
- 3.32  
- 3.59  
- 0.05  
- 0.17  
- 0.50  
- 0.81  
- 1.18  
- 1.52  
- 1.86  
- 2.20  
- 2.53  
- 2.86  
- 3.21  
- 3.50  
- 3.80  
- 7.2  
5.71  
5.51  
5.20  
2.01  
1.45  
0.94  
0.43  
- 0.10  
- 0.59  
- 1.12  
- 1.52  
- 1.93  
- 2.35  
5.19  
5.58  
4.45  
3.95  
3.40  
2.88  
2.39  
1.88  
1.39  
0.90  
0.50  
0.13  
- 0.28  
6.07  
6.44  
5.31  
4.80  
4.23  
3.72  
3.22  
2.72  
2.24  
1.74  
1.34  
0.95  
0.56  
168.8  
157.3  
134.7  
121.3  
108.4  
96.5  
85.0  
74.1  
63.6  
53.1  
43.7  
33.6  
24.1  
165.3  
151.8  
136.3  
123.3  
110.9  
99.5  
88.7  
78.1  
67.9  
57.9  
48.7  
38.9  
29.6  
165.4  
152.0  
136.7  
123.8  
111.5  
100.3  
89.6  
79.4  
69.2  
59.4  
50.2  
- 55.94  
- 50.26  
- 48.51  
- 46.98  
- 46.40  
- 46.40  
- 47.02  
- 47.53  
- 47.81  
- 48.52  
- 48.53  
- 46.95  
- 44.44  
- 56.24  
- 49.97  
- 47.91  
- 46.48  
- 45.91  
- 45.91  
- 46.53  
- 47.13  
- 47.41  
- 48.21  
- 48.43  
- 47.04  
- 44.54  
- 55.74  
- 49.47  
- 47.41  
- 45.98  
- 45.41  
- 45.41  
- 46.13  
- 46.63  
- 47.00  
- 47.91  
- 48.33  
- 47.04  
- 44.53  
83.6  
76.8  
67.7  
62.8  
57.8  
57.3  
58.9  
63.3  
73.1  
83.5  
102.1  
120.4  
131.7  
81.9  
75.0  
67.2  
61.8  
56.3  
55.8  
56.7  
60.7  
69.9  
80.0  
98.9  
118.2  
130.5  
81.4  
74.6  
66.4  
60.8  
55.1  
54.4  
54.9  
58.5  
67.3  
76.7  
95.2  
115.3  
128.7  
- 0.08  
- 0.13  
- 0.29  
- 0.44  
- 0.59  
- 0.76  
- 0.91  
- 1.08  
- 1.26  
- 1.45  
- 1.57  
- 1.75  
- 1.92  
- 0.11  
- 0.21  
- 0.33  
- 0.47  
- 0.65  
- 0.81  
- 0.96  
- 1.12  
- 1.32  
- 1.49  
- 1.61  
- 1.79  
- 1.96  
- 0.15  
- 0.24  
- 0.36  
- 0.52  
- 0.68  
- 0.84  
- 1.02  
- 1.16  
- 1.35  
- 1.53  
- 1.66  
- 1.84  
- 2.00  
- 3.6  
- 7.0  
- 9.7  
- 14.1  
- 20.9  
- 32.1  
- 39.2  
- 45.8  
- 52.3  
- 58.7  
- 64.7  
- 70.7  
- 76.6  
- 82.5  
- 88.6  
- 9.0  
- 18.7  
- 26.0  
- 33.7  
- 41.2  
- 48.3  
- 55.1  
- 61.6  
- 67.9  
- 74.2  
- 80.2  
- 86.4  
- 92.3  
- 9.4  
- 19.4  
- 27.1  
- 35.0  
- 42.9  
- 50.3  
- 57.2  
- 63.9  
- 70.4  
- 76.8  
- 82.9  
- 89.0  
- 95.1  
- 12.3  
- 15.1  
- 17.4  
- 19.7  
- 22.0  
- 24.3  
- 26.2  
- 28.4  
- 30.5  
- 32.7  
- 3.5  
5
- 7.2  
- 9.8  
- 12.6  
- 15.3  
- 17.8  
- 20.0  
- 22.4  
- 24.6  
- 26.6  
- 28.8  
- 31.0  
- 33.3  
- 3.6  
10  
- 7.3  
- 10.0  
- 12.9  
- 15.7  
- 18.0  
- 20.4  
- 22.7  
- 25.0  
- 27.1  
- 29.4  
- 31.6  
- 33.9  
15  
1000  
1100  
1200  
1300  
40.8  
31.5  
Document Number 85011  
Rev. 1.8, 05-Sep-08  
www.vishay.com  
3
BF998/BF998R/BF998RW  
Vishay Semiconductors  
Typical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
300  
250  
200  
150  
100  
50  
4 V  
3 V  
2 V  
20  
16  
12  
8
5 V  
VDS = 8 V  
1 V  
0
4
VG1S = - 1 V  
0
0
0
20 40 60 80 100 120 140 160  
- Ambient Temperature (°C)  
- 0.6  
- 0.2  
0.2  
0.6  
1.0  
1.4  
T
amb  
12817  
96 12159  
V
G2S - Gate 2 Source Voltage (V)  
Figure 1. Total Power Dissipation vs. Ambient Temperature  
Figure 4. Drain Current vs. Gate 2 Source Voltage  
30  
3.0  
V
= 4V  
V
= 8 V  
= 4 V  
G2S  
DS  
V
= 0.6 V  
0.4 V  
25  
20  
15  
10  
5
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
G1S  
V
G2S  
f = 1 MHz  
0.2 V  
0
- 0.2 V  
- 0.4 V  
0
- 2 - 1.5 - 1 - 0.5  
0
0.5 1.0 1.5  
0
2
4
6
8
10  
12812  
12863  
V
DS - Drain Source Voltage (V)  
VG1S - Gate 1 Source Voltage (V)  
Figure 2. Drain Current vs. Drain Source Voltage  
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage  
3.0  
20  
3 V  
2 V  
VDS = 8 V  
6 V  
5 V  
4 V  
VG2S = 4 V  
f = 1 MHz  
2.5  
16  
12  
8
1 V  
2.0  
1.5  
1.0  
0.5  
0.0  
0
4
VG2S = - 1 V  
0.8  
0
- 0.8  
- 0.4  
0.0  
0.4  
1.2  
2
4
6
8
10  
12  
12816  
12864  
VDS - Drain Source Voltage (V)  
VG1S - Gate 1 Source Voltage (V)  
Figure 3. Drain Current vs. Gate 1 Source Voltage  
Figure 6. Output Capacitance vs. Drain Source Voltage  
www.vishay.com  
4
Document Number 85011  
Rev. 1.8, 05-Sep-08  
BF998/BF998R/BF998RW  
Vishay Semiconductors  
10  
0
5
4 V  
3 V  
V
= 8 V  
= 4 V  
f = 800 MHz  
DS  
f = 100 MHz  
0
- 5  
V
G2S  
2 V  
f = 100...1300 MHz  
1 V  
- 10  
- 20  
- 30  
- 40  
- 50  
- 10  
- 15  
- 20  
- 25  
- 30  
- 35  
- 40  
I
= 5 mA  
D
0
10 mA  
400 MHz  
700 MHz  
- 0.2 V  
20 mA  
- 0.4 V  
1000 MHz  
VG2S = - 0.8 V  
1300 MHz  
- 1.0  
- 0.5  
0.0  
0.5  
1.0  
1.5  
0
4
8
12 16 20 24 28 32  
VG1S - Gate 1 Source Voltage (V)  
12821  
Re (y21) (mS)  
12818  
Figure 7. Transducer Gain vs. Gate 1 Source Voltage  
Figure 10. Short Circuit Forward Transfer Admittance  
9
32  
VDS = 8 V  
f = 1 MHz  
VG2S = 4 V  
3 V  
f = 1300 MHz  
8
7
6
5
4
3
2
1
0
28  
24  
20  
16  
12  
8
1000 MHz  
700 MHz  
2 V  
V
V
= 15 V  
400 MHz  
DS  
= 4 V  
G2S  
I
=10 mA  
1 V  
D
4
100 MHz  
f = 100...1300 MHz  
0
0
0
4
8
12  
16  
20  
24  
28  
0.00 0.25 0.50 0.75 1.00 1.25 1.50  
12819  
12822  
Re (y22) (mS)  
ID - Drain Current (mA)  
Figure 8. Forward Transadmittance vs. Drain Current  
Figure 11. Short Circuit Output Admittance  
20  
f = 1300 MHz  
18  
16  
14  
1000 MHz  
12  
10  
700 MHz  
8
V
= 8 V  
= 4 V  
= 10 mA  
DS  
6
4
2
0
400 MHz  
V
G2S  
I
D
f = 100...1300 MHz  
100 MHz  
0
2
4
6
8
10 12 14  
12820  
Re (y11) (mS)  
Figure 9. Short Circuit Input Admittance  
Document Number 85011  
Rev. 1.8, 05-Sep-08  
www.vishay.com  
5
BF998/BF998R/BF998RW  
Vishay Semiconductors  
V
S
= 8 V, I = 10 mA, V  
= 4 V, Z = 50 Ω  
DS  
11  
D
G2S  
0
S
21  
j
90°  
700  
120 °  
400  
60°  
j0.5  
j2  
1000  
150 °  
100  
30°  
j0.2  
j5  
1300 MHz  
0
0.2  
0.5  
1
2
5
180°  
1
2
0°  
100  
- j5  
- j0.2  
1300 MHz  
1000  
- 150°  
- 30°  
- j0.5  
- j2  
- 120°  
- 60°  
- j  
- 90°  
12962  
12960  
Figure 12. Input Reflection Coefficient  
Figure 14. Forward Transmission Coefficient  
S
S
22  
12  
j
90°  
120°  
60°  
j0.5  
j2  
5
150°  
1300 MHz  
30°  
0.16 0 °  
- 30°  
j0.2  
0
j5  
1200  
200  
100  
180°  
0.08  
0.2  
0.5  
1
2
100  
- j0.2  
- j5  
- 150°  
1300 MHz  
- j0.5  
- j2  
- 120°  
- 60°  
12963  
- j  
- 90°  
12973  
Figure 13. Reverse Transmission Coefficient  
Figure 15. Output Reflection Coefficient  
www.vishay.com  
6
Document Number 85011  
Rev. 1.8, 05-Sep-08  
BF998/BF998R/BF998RW  
Vishay Semiconductors  
Package Dimensions in millimeters (inches): SOT143  
3 [0.118]  
2.8 [0.110]  
0.5 [0.020]  
0.5 [0.020]  
0.35 [0.014]  
2.6 [0.102]  
0.35 [0.014]  
2.35 [0.093]  
1.8 [0.071]  
1.6 [0.063]  
0.5 [0.020]  
0.9 [0.035]  
0.75 [0.030]  
0.35 [0.014]  
foot print recommendation:  
1.7 [0.067]  
1.2 [0.047]  
0.8 [0.031]  
2 [0.079]  
1.8 [0.071]  
0.8 [0.031]  
0.8 [0.031]  
96 12240  
1.9 [0.075]  
Package Dimensions in millimeters (inches): SOT143R  
96 12239  
Document Number 85011  
Rev. 1.8, 05-Sep-08  
www.vishay.com  
7
BF998/BF998R/BF998RW  
Vishay Semiconductors  
Package Dimensions in millimeters (inches): SOT343R  
96 12238  
www.vishay.com  
8
Document Number 85011  
Rev. 1.8, 05-Sep-08  
BF998/BF998R/BF998RW  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 85011  
Rev. 1.8, 05-Sep-08  
www.vishay.com  
9
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
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therein, which apply to these products.  
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Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
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