BF998B-GS08 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | BF998B-GS08 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总8页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF998 / BF998R / BF998RW
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
2
1
Features
• Integrated gate protection diodes
SOT-143
• Low noise figure
3
4
• Low feedback capacitance
• High cross modulation performance
• Low input capacitance
• High AGC-range
2
1
SOT-143R
SOT-343R
• High gain
4
3
2
1
Applications
Input and mixer stages in UHF tuners.
4
3
Mechanical Data
Typ: BF998
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: MO
19216
Electrostatic sensitive device.
Observe precautions for handling.
Pinning:
Typ: BF998RW
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: BF998R
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Marking: WMO
Case: SOT-143R Plastic case
Weight: approx. 8.0 mg
Marking: MOR
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Parts Table
Part
Ordering Code
Marking
Package
BF998
BF998A-GS08 or BF998B-GS08
BF998A-GS08
MO
SOT143
BF998A
MO
SOT143
BF998B
BF998B-GS08
MO
SOT143
BF998R
BF998RA-GS08 or BF998RB-GS08
BF998RA-GS08
MOR
MOR
MOR
SOT143R
SOT143R
SOT143R
SOT343R
SOT343R
SOT343R
BF998RA
BF998RB
BF998RW
BF998RAW
BF998RBW
BF998RB-GS08
BF998RAW-GS08 or BF998RBW-GS08 MOW
BF998RAW-GS08
BF998RBW-GS08
MOW
MOW
Document Number 85011
Rev. 1.5, 24-Nov-04
www.vishay.com
1
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VDS
Value
12
Unit
V
Drain - source voltage
Drain current
ID
30
10
mA
mA
Gate 1/Gate 2 - source peak
current
IG1/G2SM
Gate 1/Gate 2 - source voltage
Total power dissipation
VG1S/G2S
Ptot
7
200
V
mW
°C
Tamb ≤ 60 °C
Channel temperature
TCh
150
Storage temperature range
Tstg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthChA
Value
450
Unit
K/W
1)
Channel ambient
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
V(BR)DS
Min
12
Typ.
Max
Unit
V
Drain - source breakdown
voltage
ID = 10 µA, - VG1S = - VG2S = 4 V
Gate 1 - source breakdown
voltage
IG1S = 10 mA, VG2S = VDS = 0
IG2S = 10 mA, VG1S = VDS = 0
VG1S = 5 V, VG2S = VDS = 0
V(BR)G1SS
V(BR)G2SS
7
7
14
14
V
V
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain current
IG1SS
IG2SS
IDSS
50
50
18
nA
nA
VG2S = 5 V, VG1S = VDS = 0
V
DS = 8 V, VG1S = 0, VG2S = 4 V
BF998/
BF998R/
BF998RW
4
4
mA
BF998A/
BF998RA/
BF998RAW
IDSS
10.5
18
mA
mA
BF998B/
BF998RB/
BF998RBW
IDSS
9.5
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
V
V
DS = 8 V, VG2S = 4 V, ID = 20 µA
DS = 8 V, VG1S = 0, ID = 20 µA
- VG1S(OFF)
- VG2S(OFF)
1.0
0.6
2.0
1.0
V
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
V
DS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter Test condition
Symbol
Min
21
Typ.
24
Max
Unit
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
|y21s
|
mS
pF
pF
fF
Cissg1
Cissg2
Crss
2.1
1.1
25
2.5
V
G1S = 0, VG2S = 4 V
Coss
1.05
pF
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2
Document Number 85011
Rev. 1.5, 24-Nov-04
BF998 / BF998R / BF998RW
VISHAY
Vishay Semiconductors
Parameter
Test condition
GS = 2 mS, GL = 0.5 mS,
f = 200 MHz
Symbol
Gps
Min
Typ.
28
Max
Unit
dB
Power gain
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
Gps
16.5
40
20
dB
AGC range
Noise figure
V
G2S = 4 to -2 V, f = 800 MHz
S = 2 mS, GL = 0.5 mS,
∆Gps
dB
dB
G
F
1.0
1.5
f = 200 MHz
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
F
dB
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
250
200
150
100
50
20
16
12
8
3 V
2 V
V
= 8V
6 V
5 V
4 V
DS
1 V
0
4
V
= –1 V
G2S
0
0
0
20 40 60 80 100 120 140 160
–0.8
–0.4
0.0
0.4
0.8
1.2
96 12159
12816
V
G1S
– Gate 1 Source Voltage ( V )
T
amb
- Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Drain Current vs. Gate 1 Source Voltage
30
4 V
V
= 0.6 V
3 V
2 V
G1S
20
16
12
8
V
= 4V
5 V
G2S
V
= 8V
DS
25
20
15
10
5
1 V
0.4 V
0.2 V
0
0
–0.2 V
–0.4 V
4
V
= –1 V
G1S
0
0
0
2
4
6
8
10
–0.6
–0.2
0.2
0.6
1.0
1.4
12812
V
– Drain Source Voltage ( V )
12817
V
G2S
– Gate 2 Source Voltage ( V )
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 4. Drain Current vs. Gate 2 Source Voltage
Document Number 85011
Rev. 1.5, 24-Nov-04
www.vishay.com
3
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
3.0
32
28
24
20
16
12
8
V
= 8 V
V
= 4 V
3 V
DS
G2S
V
= 8 V
= 4 V
DS
f = 1 MHz
2.5
2.0
1.5
1.0
0.5
0.0
V
G2S
f = 1 MHz
2 V
1 V
16
4
0
0
-2 -1.5 -1 -0.5
0
0.5 1.0 1.5
0
4
8
D
12
20
24
28
12863
V
– Gate 1 Source Voltage ( V )
12819
12820
12821
I
– Drain Current ( mA )
G1S
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
Figure 8. Forward Transadmittance vs. Drain Current
3.0
20
f = 1300 MHz
18
V
= 4 V
G2S
2.5
2.0
1.5
1.0
0.5
0.0
f = 1 MHz
16
14
1000 MHz
12
10
700 MHz
8
V
= 8 V
= 4 V
= 10 mA
DS
6
4
2
0
400 MHz
V
G2S
I
D
f = 100...1300 MHz
100 MHz
2
4
6
8
10
12
0
2
4
6
8
10
Re (y ) ( mS )
11
12
14
12864
V
– Drain Source Voltage ( V )
DS
Figure 6. Output Capacitance vs. Drain Source Voltage
Figure 9. Short Circuit Input Admittance
10
5
0
4 V
3 V
= 8 V
= 4 V
f = 800 MHz
DS
f = 100 MHz
0
2 V
f = 100...1300 MHz
–5
1 V
–10
–10
–15
–20
–25
–30
–35
–40
I
= 5 mA
D
0
10 mA
400 MHz
700 MHz
–20
–0.2 V
20 mA
–30
–0.4 V
1000 MHz
–40
V
= –0.8 V
G2S
1300 MHz
–50
–1.0
–0.5
0.0
0.5
1.0
1.5
0
4
8
12 16 20 24 28 32
Re (y ( mS )
12818
V
– Gate 1 Source Voltage ( V )
)
21
G1S
Figure 7. Transducer Gain vs. Gate 1 Source Voltage
Figure 10. Short Circuit Forward Transfer Admittance
www.vishay.com
Document Number 85011
Rev. 1.5, 24-Nov-04
4
BF998 / BF998R / BF998RW
VISHAY
Vishay Semiconductors
9
8
7
6
5
4
3
2
1
0
f = 1300 MHz
1000 MHz
700 MHz
V
V
= 15 V
400 MHz
DS
= 4 V
G2S
I
=10 mA
D
100 MHz
f = 100...1300 MHz
0.00 0.25 0.50 0.75 1.00 1.25 1.50
Re (y ( mS )
12822
)
22
Figure 11. Short Circuit Output Admittance
V
S
= 8 V, I = 10 mA, V
= 4 V, Z = 50 Ω
DS
11
D
G2S
0
S
21
90°
700
j
120 °
400
60°
j0.5
0.2
j2
1000
150 °
100
30°
j0.2
0
1300 MHz
j5
180°
1
2
0°
0.5
1
2
5
100
–j5
–j0.2
1300 MHz
1000
–150°
–30°
–j0.5
–j2
–120°
–60°
12962
–90°
12960
–j
Figure 12. Input Reflection Coefficient
Figure 14. Forward Transmission Coefficient
S
S
22
12
j
90 °
120 °
60 °
j0.5
0.2
j2
5
150°
30 °
j0.2
0
j5
1200
1300 MHz
200
100
0.5
1
2
180°
0.08
0.16
0 °
100
–j0.2
–j5
–150°
–30°
1300 MHz
–j0.5
–j2
–120°
–60°
12963
–j
12973
–90°
Figure 13. Reverse Transmission Coefficient
Figure 15. Output Reflection Coefficient
Document Number 85011
Rev. 1.5, 24-Nov-04
www.vishay.com
5
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
Package Dimensions of SOT143 in mm
1.1 (0.043)
0.9 (0.035)
0.50(0.020)
0.9 (0.035)
0.35 (0.014)
0.15 (0.006)
0.08 (0.003)
0.75 (0.029)
3.0 (0.117)
2.8 (0.109)
0...0.1 (0...0.004)
Mounting Pad Layout
1.8 (0.070)
1.6 (0.062)
0.65 (0.025)
1.17 (0.046)
ISO Method E
2.0 (0.078)
1.8 (0.070)
96 12240
Package Dimensions of SOT143R in mm
96 12239
www.vishay.com
6
Document Number 85011
Rev. 1.5, 24-Nov-04
BF998 / BF998R / BF998RW
VISHAY
Vishay Semiconductors
Package Dimensions of SOT343R in mm
96 12238
Document Number 85011
Rev. 1.5, 24-Nov-04
www.vishay.com
7
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 85011
Rev. 1.5, 24-Nov-04
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