BF998E6327HTSA1 [INFINEON]
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN;型号: | BF998E6327HTSA1 |
厂家: | Infineon |
描述: | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN 光电二极管 晶体管 |
文件: | 总9页 (文件大小:92K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
MOs
BF998
BF998R
SOT143
1=S
2=D
2=S
3=G2 4=G1
3=G1 4=G2
-
-
-
-
SOT143R 1=D
MRs
Maximum Ratings
Parameter
Symbol
Value
12
Unit
V
Drain-source voltage
V
DS
30
mA
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
I
D
10
±I
G1/2SM
tot
200
P
T ≤ 76 °C, BF998, BF998R
S
°C
Storage temperature
Channel temperature
T
-55 ... 150
150
stg
T
ch
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Channel - soldering point , BF998, BF998R
R
≤ 370
thchs
1Pb-containing package may be available upon special request
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-20
1
BF998...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
12
-
-
V
Drain-source breakdown voltage
V
(BR)DS
I = 10 µA, V
= -4 V, V
= -4 V
D
G1S
G2S
Gate 1 source breakdown voltage
±I = 10 mA, V = V = 0
±V
±V
8
8
-
-
12
12
(BR)G1SS
(BR)G2SS
G1SS
G2S
G2S
DS
Gate2 source breakdown voltage
±I = 10 mA, V = V = 0
G2S
G2S
DS
Gate 1 source leakage current
±V = 5 V, V = V = 0
±I
±I
-
-
-
-
50
50
15
nA
nA
mA
G1S
G2S
DS
Gate 2 source leakage current
±V = 5 V, V = V = 0
G2SS
G2S
G2S
DS
5
9
Drain current
= 8 V, V
I
DSS
V
= 0 , V
= 4 V
G2S
DS
G1S
Gate 1 source pinch-off voltage
= 8 V, V = 4 V, I = 20 µA
-V
-V
-
-
0.8
0.8
2.5
2
V
G1S(p)
G2S(p)
V
DS
G2S
D
Gate 2 source pinch-off voltage
= 8 V, V = 0 , I = 20 µA
V
DS
G1S
D
2007-04-20
2
BF998...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
20
-
typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
24
-
-
g
fs
V
= 8 V, I = 10 mA, V
= 4 V
DS
D
G2S
2.1
2.5 pF
Gate1 input capacitance
= 8 V, I = 10 mA, V
C
C
C
C
g1ss
g2ss
dg1
dss
p
V
= 4 V,
DS
D
G2S
f = 10 MHz
Gate 2 input capacitance
-
1.2
-
pF
V
= 8 V, I = 10 mA, V
= 4 V,
= 4 V,
= 4 V,
DS
D
G2S
G2S
G2S
f = 10 MHz
Feedback capacitance
-
-
25
-
-
fF
V
= 8 V, I = 10 mA, V
D
DS
f = 10 MHz
1.1
pF
Output capacitance
V
= 8 V, I = 10 mA, V
D
DS
f = 10 MHz
Power gain
G
dB
dB
V
= 8 V, I = 10 mA, V
= 4 V,
= 4 V,
DS
D
G2S
f = 45 MHz
= 8 V, I = 10 mA, V
-
-
28
20
-
-
V
DS
D
G2S
f = 800 MHz
Noise figure
F
V
= 8 V, I = 10 mA, V
= 4 V,
= 4 V,
DS
D
G2S
f = 45 MHz
= 8 V, I = 10 mA, V
-
2.8
-
V
DS
D
G2S
f = 800 MHz
-
1.8
50
-
-
40
Gain control range
∆G
p
V
= 8 V, V
= 4 ...-2 V, f = 800 MHz
G2S
DS
2007-04-20
3
BF998...
Total power dissipation P = ƒ(T )
Output characteristics I = ƒ(V )
D DS
tot
S
BF998, BF998R
V
V
= 4 V
G2S
G1S
= Parameter
26
mA
220
mW
0.4V
0.2V
22
180
160
140
120
100
80
20
18
16
14
12
10
8
0V
-0.2V
-0.4V
60
6
40
4
20
2
0
0
°C
V
0
15 30 45 60 75 90 105 120
150
0
2
4
6
8
10
14
T
V
DS
S
Gate 1 forward transconductance
Gate 1 forward transconductance
g = ƒ(I )
g
= ƒ (V
)
fs
D
fs1
G1S
V
= 5V, V
= Parameter
DS
G2S
26
26
mS
mS
4V
4V
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
2V
2V
1V
1V
0V
6
6
4
4
0V
2
2
0
0
mA
V
0
4
8
12
16
24
-1
-0.75 -0.5 -0.25
0
0.25
0.75
V
G1S
I
D
2007-04-20
4
BF998...
Drain current I = ƒ(V
)
Power gain G = ƒ (V
)
G2S
D
G1S
ps
V
V
= 5V
f = 45 MHz
DS
= Parameter
G2S
30
30
dB
4V
2V
mA
20
20
15
10
5
1V
15
10
5
0V
0
0
V
V
-1 -0.75 -0.5 -0.25
0
0.25 0.5
1
0
1
2
4
V
G1S
V
G2S
Noise figure F = ƒ (V
f = 45 MHz
)
Noise figure F = ƒ (V
)
G2S
G2S
f = 800 MHz
10
dB
5
dB
8
7
6
5
4
3
2
1
0
3
2
1
0
V
V
0
1
2
4
0
1
2
4
V
G2S
V
G2S
2007-04-20
5
BF998...
Power gain G = ƒ (V
)
Gate 1 input capacitance C
= ƒ (V
)
G1S
ps
G2S
g1ss
f = 800 MHz
20
dB
2.6
pF
2.2
2
10
5
1.8
1.6
1.4
1.2
1
0
-5
-10
V
V
0
1
2
4
-3
-2.6 -2.2 -1.8 -1.4
-1
-0.6
0.2
V
G2S
V
G1S
Output capacitance C
= ƒ(V )
DS
dss
4
pF
3
2.5
2
1.5
1
0.5
0
V
0
2
4
6
8
12
V
DS
2007-04-20
6
Package SOT143
BF998...
Package Outline
±0.1
1
±0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
+0.1
-0.05
0.08...0.15
0.8
0...8˚
+0.1
-0.05
0.4
M
M
0.2
0.25
B
A
1.7
Foot Print
0.8 1.2 0.8
1.2
0.8
0.8
Marking Layout (Example)
Manufacturer
2005, June
RF s
Date code (YM)
Pin 1
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
1.15
Pin 1
2007-04-20
7
Package SOT143R
BF998...
Package Outline
±0.1
1
±0.1
2.9
B
0.1 MAX.
1.9
4
1
3
2
A
0.2
+0.1
-0.05
0.8
+0.1
-0.05
0.4
0˚...
A
8˚
1.7
M
0.2
M
0.25
B
Foot Print
0.8
1.2
0.8
0.8 0.8
1.2
Marking Layout (Example)
Reverse bar
2005, June
Date code (YM)
Pin 1
Manufacturer
BFP181R
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
Pin 1
1.15
2007-04-20
8
BF998...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
9
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