BC327-40-BULK [VISHAY]
Transistor;
| 型号： | BC327-40-BULK |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC327 / BC328
Vishay Semiconductors
VISHAY
Small Signal Transistors (PNP)
Features
C
1
• PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially
suitable for AF-driver stages and low-power output
stages.
2
B
• These types are also available subdivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementary types, the
NPN transistors BC337 and BC338 are recom-
mended.
3
2
1
E
3
18979
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
Type differentiation
Ordering code
Remarks
BC327-16
BC327-25
BC327-40
BC328-16
BC328-25
BC328-40
h
h
h
h
h
h
, typ. 160 @ 100 mA BC327-16-BULK or BC327-16-TAP
, typ. 250 @ 100 mA BC327-25-BULK or BC327-25-TAP
, typ. 400 @ 100 mA BC327-40-BULK or BC327-40-TAP
, typ. 130 @ 300 mA BC328-16-BULK or BC328-16-TAP
, typ. 200 @ 300 mA BC328-25-BULK or BC328-25-TAP
, typ. 320 @ 300 mA BC328-40-BULK or BC328-40-TAP
Bulk / Ammopack
FE
FE
FE
FE
FE
FE
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
Value
50
Unit
V
Collector - emitter voltage
BC327
BC328
BC327
BC328
- V
- V
- V
- V
- V
CES
CES
CEO
CEO
EBO
30
45
25
5
V
V
V
Emitter - base voltage
Collector current
Peak collector current
Base current
V
- I
800
1
mA
A
C
- I
CM
- I
100
mA
mW
B
1)
Power dissipation
T
= 25 °C
P
amb
tot
625
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Document Number 85132
Rev. 1.4, 19-May-04
www.vishay.com
1
BC327 / BC328
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
1)
Thermal resistance junction to
ambient air
R
°C/W
θJA
200
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
- 65 to + 150
S
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
Min
100
Typ
160
Max
Unit
V
DC current gain
- V = 1 V, - I = 100 mA
BC327-16
h
h
h
h
h
h
250
400
630
CE
C
FE
FE
FE
FE
FE
FE
(current gain grup - 16)
DC current gain
- V = 1 V, - I = 100 mA
BC327-25
BC327-40
BC328-16
BC328-25
BC328-40
160
250
60
250
400
130
200
320
V
V
V
V
V
CE
C
(current gain grup - 25)
DC current gain
- V = 1 V, - I = 100 mA
CE C
(current gain grup - 40)
DC current gain
- V = 1 V, - I = 300 mA
CE C
(current gain grup - 16)
DC current gain
- V = 1 V, - I = 300 mA
100
170
CE
C
(current gain grup - 25)
DC current gain
- V = 1 V, - I = 300 mA
CE C
(current gain grup - 40)
Collector - emitter cutoff current - V = 45 V
BC327
BC328
BC327
BC328
- I
- I
- I
- I
2
2
100
100
10
nA
nA
µA
µA
V
CE
CES
CES
CES
CES
CEsat
- V = 25 V
CE
- V = 45 V, T
= 125 °C
= 125 °C
amb
CE
amb
- V = 25 V, T
10
CE
Collector saturation voltage
Base - emitter voltage
- I = 500 mA, - I = 50 mA
- V
- V
0.7
1.2
C
B
- V = 1 V, - I = 300 mA
V
CE
C
BE
Collector - emitter breakdown
voltage
- I = 10 mA
BC327
- V
45
V
C
(BR)CEO
BC328
BC327
BC328
- V
- V
- V
- V
25
50
30
5
V
V
V
V
(BR)CEO
(BR)CEO
(BR)CES
(BR)EBO
- I = 0.1 mA
C
Emitter - base breakdown
voltage
- I = 0.1 mA
E
Electrical AC Characteristics
Parameter
Test condition
Symbol
Min
Typ
100
Max
Unit
Gain - bandwidth product
- V = 5 V, - I = 10 mA,
f
T
MHz
CE
C
f = 50 MHz
Collector - base capacitance
- V = 10 V, f = 1 MHz
C
12
pF
CB
CBO
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2
Document Number 85132
Rev. 1.4, 19-May-04
BC327 / BC328
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1
10000
1000
100
maximum
0.8
typical
0.6
0.4
0.2
0
BC 327:-V = 45 V
CE
10
BC 328:-V = 25 V
CE
1
0
20 40 60 80 100 120 140 160180 200
- Ambient Temperature ( °C )
0
20 40 60 80 100 120 140 160 180 200
18845
T
amb
T
- Ambient Temperature (°C )
18878
amb
Fig. 1 Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 Collector-Emitter Cutoff Current vs. Ambient Temperature
3
1000
10
150°C
2
10
0.5
0.2
0.1
- 50°C
100
10
0.05
T
amb
= 25°C
0.02
0.01
0.005
t
p
1
ν
= t /T
p
P
I
ν
= 0
-V
= 1 V
CE
T
-1
10
10
-6
-5
-4
-3
-2
-1
2
0.1
1
10
100
1000
10
10 10 10 10 10
1
10 10
18847
t
- Pulse Length ( s )
18885
I
- Collector Current ( mA )
p
C
Fig. 2 Pulse Thermal Resistance vs. Pulse Duration
Fig. 5 DC Current Gain vs. Collector Current
500
1000
3.2
25°C
2.8
1.8
-50°C
2.4
2
400
300
200
100
150°C
100
1.6
1.4
typical
limits
1.2
1
0.8
10
1
at T
= 25°C
amb
0.6
0.4
-I = 0.2 mA
B
0.1
0
0
0.4
0.8
1.2
1.6
2
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8 2
18877
-V - Base-Emitter Voltage ( V )
BE
-V
- Collector Emitter Voltage ( V )
CE
18879
Fig. 3 Collector Current vs. Base-Emitter Voltage
Fig. 6 Common Emitter Collector Characteristics
Document Number 85132
Rev. 1.4, 19-May-04
www.vishay.com
3
BC327 / BC328
Vishay Semiconductors
VISHAY
2
1
0
500
typical
limits
0.9
0.85
at T
= 25°C
amb
400
300
-I
-I
C
B
= 10
0.8
- 50°C
200
100
0
25°C
0.75
150°C
-V = 0.7 V
BE
0.1
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
-I - Collector Current ( mA )
C
18883
-V
CE
- Collector Emitter Voltage ( V )
18880
Fig. 7 Common Emitter Collector Characteristics
Fig. 10Base Saturation Voltage vs. Collector Current
1000
100
0.35
T
amb
= 25°
f = 20 MHz
0.3
80
-V = 5 V
CE
0.25
60
0.2
1 V
100
0.15
40
0.1
-I = 0.05 mA
20
B
10
0
0
2
4
6
8
10 12 14 16 18 20
1
10
100
1000
18884
-I - Collector Current ( mA )
C
-V
- Collector Emitter Voltage ( V )
18881
CE
Fig. 8 Common Emitter Collector Characteristics
Fig. 11Gain-Bandwidth Product vs. Collector Current
0.5
typical
limits
at T
= 25°C
amb
0.4
0.3
0.2
-I
-I
C
B
= 10
0.1
0
25°C
150°C
- 50°C
100 1000
-I - Collector Current ( mA )
0.1
1
10
18882
C
Fig. 9 Collector Saturation Voltage vs. Collector Current
www.vishay.com
4
Document Number 85132
Rev. 1.4, 19-May-04
BC327 / BC328
Vishay Semiconductors
VISHAY
Packaging for Radial Taping
± 2
±2.7 ±±
± ±
Vers. Dim. "H"
27 ± 0.5
FSZ
0.9 max
5.08 ± 0.7
+ 0.6
4
± 0.2
2.54
- 0.±
6.3 ± 0.7
±2.7 ± 0.2
Measure limit over 20 index - holes: ± ±
±8787
Document Number 85132
Rev. 1.4, 19-May-04
www.vishay.com
5
BC327 / BC328
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
4.6 (0.181)
3.6 (0.142)
max. 0.55 (0.022)
2.5 (0.098)
Bottom
View
18776
www.vishay.com
6
Document Number 85132
Rev. 1.4, 19-May-04
BC327 / BC328
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85132
Rev. 1.4, 19-May-04
www.vishay.com
7
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