BC327-40D26Z [FAIRCHILD]

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92;
BC327-40D26Z
型号: BC327-40D26Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

开关 晶体管
文件: 总5页 (文件大小:68K)
中文:  中文翻译
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BC327/328  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC337/BC338  
TO-92  
1. Collector 2. Base 3. Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
: BC327  
: BC328  
Collector-Emitter Voltage  
CES  
-50  
-30  
V
V
CEO  
EBO  
: BC327  
: BC328  
-45  
-25  
V
V
Emitter-Base Voltage  
-5  
-800  
V
I
Collector Current (DC)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
mA  
mW  
°C  
C
P
625  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage I = -10mA, I =0  
CEO  
CES  
EBO  
C
B
: BC327  
: BC328  
-45  
-25  
V
V
Collector-Emitter Breakdown Voltage I = -0.1mA, V =0  
C
BE  
: BC327  
: BC328  
-50  
-30  
V
V
Emitter-Base Breakdown Voltage  
IE= -10µA, I =0  
-5  
V
C
I
Collector Cut-off Current  
: BC307  
CES  
V
V
= -45V, V =0  
= -25V, V =0  
BE  
-2  
-2  
-100  
-100  
nA  
nA  
CE  
CE  
BE  
: BC338  
h
h
DC Current Gain  
V
V
= -1V, I = -100mA  
100  
40  
630  
FE1  
FE2  
CE  
CE  
C
= -1V, I = -300mA  
C
V
V
(sat) Collector-Emitter Saturation Voltage  
(on) Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -500mA, I = -50mA  
-0.7  
-1.2  
V
V
CE  
C
B
V
= -1V, I = -300mA  
C
BE  
CE  
CE  
CB  
f
V
V
= -5V, I = -10mA, f=20MHz  
100  
12  
MHz  
pF  
T
C
C
= -10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE  
Classification  
16  
100 ~ 250  
60-  
25  
40  
h
h
160 ~ 400  
100-  
250 ~ 630  
170-  
FE1  
FE2  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
-500  
-400  
-300  
-20  
-16  
-12  
-8  
-200  
IB = - 1.0mA  
IB = - 0.5mA  
-100  
-4  
IB = 0  
IB = 0  
-0  
-1  
-2  
-3  
-4  
-5  
-10  
-20  
-30  
-40  
-50  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. Static Characteristic  
1000  
100  
10  
-10  
PULSE  
IC = 10 IB  
PULSE  
VCE = - 2.0V  
VCE(sat)  
-1  
- 1.0V  
-0.1  
VBE(sat)  
1
-0.1  
-0.01  
-0.1  
-1  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 3. DC current Gain  
Figure 4. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
-1000  
-100  
-10  
1000  
VCE = -5.0V  
VCE = -1V  
PULSE  
100  
-1  
-0.1  
-0.4  
10  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1  
-10  
-100  
VBE[V], BASE-EMITTER VOLTAGE  
IC[mA], COLLECTOR CURRENT  
Figure 5. Base-Emitter On Voltage  
Figure 6. Gain Bandwidth Product  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics (Continued)  
100  
-1000  
-100  
-10  
f = 1MHz  
SINGLE PULSE  
ICP  
TC=25  
duty cycle<2%  
Cib  
DC  
10  
Cob  
1
-1  
0.1  
1
10  
100  
-1  
-10  
-100  
VBE[V], COLLECTOR-BASE VOLTAGE  
CE[V], COLLECTOR-EMITTER VOLTAGE  
V
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 7. Input and Output Capacitance  
vs. Reverse Voltage  
Figure 8. Safe Operating Area  
0.8  
0.6  
0.4  
0.2  
0.0  
0
25  
50  
75  
100  
125  
150  
175  
TC [OC], CASE TEMPERATURE  
Figure 9. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  

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