BC327-40BK [DIOTEC]
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| 型号： | BC327-40BK |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | 暂无描述 晶体 小信号双极晶体管 开关 |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 327 / BC 328
PNP
General Purpose Transistors
PNP
Si-Epitaxial PlanarTransistors
Power dissipation – Verlustleistung
625 mW
Plastic case
TO-92
(10D3)
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Pinning
Standard Lieferform gegurtet in Ammo-Pack
1 = C 2 = B 3 = E
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 327
45 V
50 V
BC 328
25 V
30 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Emitter-Base-voltage
B open
B shorted - VCES
C open
- VCE0
- VEB0
Ptot
- IC
- ICM
- IB
Tj
5 V
Power dissipation – Verlustleistung
625 mW 1)
800 mA
1 A
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Base current – Basisstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
100 mA
150ꢀC
- 65…+ 150ꢀC
TS
Characteristics, Tj = 25ꢀC
Kennwerte, Tj = 25ꢀC
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
Group -16
Group -25
Group -40
Group -16
Group -25
Group -40
hFE
hFE
hFE
hFE
hFE
hFE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
–
–
–
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 300 mA
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
01.11.2003
General Purpose Transistors
BC 327 / BC 328
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 45 V
- VCE = 25 V
- VCE = 45 V, Tj = 125ꢀC
- VCE = 25 V, Tj = 125ꢀC
BC 327
BC 328
BC 327
BC 328
- ICES
- ICES
- ICES
- ICES
–
–
–
–
2 nA
2 nA
–
100 nA
100 nA
10 ꢀA
10 ꢀA
–
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
BC 327
- V(BR)CES
- V(BR)CES
- V(BR)CES
- V(BR)CES
20 V
45 V
30 V
50 V
–
–
–
–
–
–
–
–
- IC = 10 mA
- IC = 0.1 mA
BC 328
BC 327
BC 328
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
- IE = 0.1 mA
- V(BR)EB0
5 V
–
–
–
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 300 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCEsat
- VBE
fT
–
–
0.7 V
1.2 V
–
–
–
100 MHz
12 pF
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
–
Thermal resistance junction to ambient air
RthA
200 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 337 / BC 338
Available current gain groups per type
BC 327-16 BC 327-25
BC 328-16 BC 328-25
BC327-40
BC328-40
Lieferbare Stromverstärkungsgruppen pro Typ
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
3
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