BAT85S-TAP [VISHAY]

Small Signal Schottky Diode; 小信号肖特基二极管
BAT85S-TAP
型号: BAT85S-TAP
厂家: VISHAY    VISHAY
描述:

Small Signal Schottky Diode
小信号肖特基二极管

整流二极管 小信号肖特基二极管
文件: 总5页 (文件大小:116K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT85S  
Vishay Semiconductors  
Small Signal Schottky Diode  
Features  
• Integrated protection ring against static  
discharge  
• Very low forward voltage  
• Lead (Pb)-free component  
e2  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
94 9367  
Applications  
• Applications where a very low forward voltage is  
required  
Mechanical Data  
Case: DO35 Glass case  
Weight: approx. 125 mg  
Cathode Band Color: black  
Packaging Codes/Options:  
TR/10 k per 13" reel (52 mm tape), 50 k/box  
TAP/10 k per Ammopack (52 mm tape), 50 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
BAT85S  
Remarks  
BAT85S  
BAT85S-TR or BAT85S-TAP  
Tape and Reel/Ammopack  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VR  
Value  
30  
Unit  
V
Reverse voltage  
tp 10 ms  
tp 1 s  
IFSM  
IFRM  
IF  
Peak forward surge current  
Repetitive peak forward current  
Forward continuous current  
Average forward current  
5
A
300  
200  
200  
mA  
mA  
mA  
PCB mounting, l = 4 mm;  
IFAV  
V
RWM = 25 V, Tamb = 50 °C  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
350  
Unit  
K/W  
°C  
l = 4 mm, TL = constant  
Thermal resistance junction to ambient air  
Junction temperature  
Tj  
125  
Tstg  
Storage temperature range  
- 65 to + 150  
°C  
Document Number 85513  
Rev. 1.8, 26-Feb-07  
www.vishay.com  
1
BAT85S  
Vishay Semiconductors  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VF  
Min  
Typ.  
Max  
240  
320  
400  
500  
800  
2
Unit  
mV  
mV  
mV  
mV  
mV  
µA  
IF = 0.1 mA  
Forward voltage  
IF = 1 mA  
VF  
VF  
VF  
VF  
IR  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA  
VR = 25 V  
Reverse current  
VR = 1 V, f = 1 MHz  
IF = 10 mA to IR = 10 mA to iR = 1 mA  
CD  
trr  
Diode capacitance  
Reverse Recovery Time  
10  
pF  
5
ns  
Typical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
200  
1000  
VR = 30 V  
180  
160  
140  
120  
100  
80  
Tj = 125 °C  
100  
10  
1
RthJA = 540 kW  
Tj = 25 °C  
PR - Limit  
at 100 % VR  
PR - Limit  
at 80 % VR  
60  
40  
20  
0.1  
0
0
0.5  
1.0  
1.5  
25  
50  
75  
100  
125  
150  
VF - Forward Voltage (V)  
15822  
15824  
Tj - Junction Temperature (°C)  
Figure 1. Max. Reverse Power Dissipation vs.  
Junction Temperature  
Figure 3. Forward Current vs. Forward Voltage  
1000  
10  
f = 1 MHz  
9
8
7
6
5
4
3
VR = VRRM  
100  
10  
1
2
1
0
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
15825  
15823  
Tj - Junction Temperature (°C)  
VR - Reverse Voltage (V)  
Figure 2. Reverse Current vs. Junction Temperature  
Figure 4. Diode Capacitance vs. Reverse Voltage  
www.vishay.com  
2
Document Number 85513  
Rev. 1.8, 26-Feb-07  
BAT85S  
Vishay Semiconductors  
Package Dimensions in millimeters (inches): DO35  
Cathode Identification  
26 min. (1.024)  
3.9 max. (0.154)  
26 min. (1.024)  
Rev. 6 - Date: 29. January 2007  
Document no.: 6.560-5004.02-4  
94 9366  
Document Number 85513  
Rev. 1.8, 26-Feb-07  
www.vishay.com  
3
BAT85S  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
4
Document Number 85513  
Rev. 1.8, 26-Feb-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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