BAT85S_10 [VISHAY]
Small Signal Schottky Diode; 小信号肖特基二极管
| 型号： | BAT85S_10 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Diode |
| 文件： | 总6页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT85S
Vishay Semiconductors
Small Signal Schottky Diode
Features
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
•
Halogen-free according to IEC 61249-2-21
definition
94 9367
Applications
• Applications where a very low forward voltage is
required
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
Ordering code
Type Marking
BAT85S
Remarks
BAT85S
BAT85S-TR or BAT85S-TAP
Tape and Reel/Ammopack
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VR
Value
30
Unit
V
Reverse voltage
tp ≤ 10 ms
tp ≤ 1 s
IFSM
IFRM
IF
Peak forward surge current
Repetitive peak forward current
Forward continuous current
5
A
300
200
mA
mA
PCB mounting, l = 4 mm;
IFAV
Average forward current
200
mA
V
RWM = 25 V, Tamb = 50 °C
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
350
Unit
K/W
°C
l = 4 mm, TL = constant
Thermal resistance junction to ambient air
Junction temperature
Tj
125
Tstg
Storage temperature range
- 65 to + 150
°C
Document Number 85513
Rev. 1.9, 23-Jul-10
www.vishay.com
1
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BAT85S
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VF
Min.
Typ.
Max.
240
320
400
500
800
2
Unit
mV
mV
mV
mV
mV
µA
IF = 0.1 mA
IF = 1 mA
VF
VF
VF
VF
IR
IF = 10 mA
Forward voltage
IF = 30 mA
IF = 100 mA
VR = 25 V
Reverse current
VR = 1 V, f = 1 MHz
IF = 10 mA to IR = 10 mA to iR = 1 mA
CD
trr
Diode capacitance
Reverse Recovery Time
10
pF
5
ns
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
200
1000
VR = 30 V
180
160
140
120
100
80
Tj = 125 °C
100
10
1
RthJA = 540 kW
Tj = 25 °C
PR - Limit
at 100 % VR
PR - Limit
at 80 % VR
60
40
20
0
0.1
25
50
75
100
125
150
0
0.5
1.0
1.5
15822
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
15824
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
1000
10
f = 1 MHz
9
8
7
6
5
4
3
VR = VRRM
100
10
2
1
0
1
0.1
1
10
100
25
50
75
100
125
150
15825
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
15823
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
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Document Number 85513
Rev. 1.9, 23-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BAT85S
Vishay Semiconductors
Package Dimensions in millimeters (inches): DO-35
Cathode identification
26 (1.024) min.
3.9 (0.154) max.
26 (1.024) min.
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85513
Rev. 1.9, 23-Jul-10
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
DO35
Vishay Semiconductors
DO35
Package Dimensions in mm (Inches)
Cathode Identification
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 84001
Rev. 1.3, 12-Feb-07
www.vishay.com
1
DO35
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
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known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
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Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
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3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
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and may do so without further notice.
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Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 84001
Rev. 1.3, 12-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Document Number: 91000
Revision: 11-Mar-11
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