BAT86 [NXP]
Schottky barrier diode; 肖特基二极管
| 型号： | BAT86 |
| 厂家： | 
NXP |
| 描述： | Schottky barrier diode |
| 文件： | 总6页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
BAT86
Schottky barrier diode
1996 Mar 20
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
FEATURES
DESCRIPTION
• Low forward voltage
• Guard ring protected
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
• Hermetically-sealed leaded glass
package.
APPLICATIONS
k
a
handbook, halfpage
• Ultra high-speed switching
• Voltage clamping
MAM193
• Protection circuits
• Blocking diodes.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
average forward current
CONDITIONS
MIN.
MAX.
50
UNIT
VR
V
−
−
−
IF
200
200
mA
mA
IF(AV)
PCB mounting, lead length = 4 mm;
VRWM = 25 V; a = 1.57; δ = 0.5;
Tamb = 50 °C; see Fig.2
IFRM
IFSM
Tstg
Tj
repetitive peak forward current
non-repetitive peak forward current
storage temperature
tp ≤ 1 s; δ ≤ 0.5
tp ≤ 10 ms
500
5
mA
A
−
−
+150
125
+125
°C
°C
°C
−65
−
junction temperature
Tamb
operating ambient temperature
−65
1996 Mar 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
ELECTRICAL CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
see Fig.3
IF = 0.1 mA
IF = 1 mA
300
mV
380
450
600
900
5
mV
mV
mV
mV
µA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
trr
reverse current
VR = 40V; see Fig.4; note 1
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
4
ns
measured at IR = 1 mA; see Fig.6
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
8
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
320
UNIT
K/W
Rth j-a
Note
1. Refer to SOD68 standard mounting conditions.
1996 Mar 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
GRAPHICAL DATA
MSA892
MRA540
3
250
10
handbook, halfpage
handbook, halfpage
I
F(AV)
I
(1) (2) (3)
F
(mA)
200
(mA)
2
10
150
100
50
10
(1)
1
(2) (3)
1
0
10
0
50
100
150
0
0.4
0.8
1.2
o
V
(V)
T
( C)
F
amb
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.2 Derating curve.
MGC686
MGC687
5
12
10
handbook, halfpage
R
(nA)
handbook, halfpage
(1)
(2)
I
C
4
d
(pF)
10
3
8
4
0
10
2
10
10
1
(3)
−1
10
0
10
20
30
40
50
0
10
20
30
40
50
V
(V)
V
(V)
R
R
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
f = 1 MHz.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1996 Mar 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
andbook, halfpage
I
F
dI
F
dt
t
10%
90%
Q
r
I
R
t
MRC129 - 1
f
Fig.6 Reverse recovery definitions.
1996 Mar 20
5
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
PACKAGE OUTLINE
0.55
max
1.6
max
3.04
max
25.4 min
25.4 min
MSA212 - 1
Dimensions in mm.
Cathode indicated by a coloured band.
The diodes are type branded.
Fig.7 SOD68; (DO-34).
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 20
6
相关型号：
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DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
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