BAR64V-05W-V-GS18 [VISHAY]
RF PIN Diodes - Dual, Common Cathode in SOT323; RF PIN二极管 - 双通道，在SOT323共阴极
| 型号： | BAR64V-05W-V-GS18 |
| 厂家： | 
VISHAY |
| 描述： | RF PIN Diodes - Dual, Common Cathode in SOT323 |
| 文件： | 总6页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAR64V-05W-V
Vishay Semiconductors
RF PIN Diodes - Dual, Common Cathode in SOT323
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-05W-V was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (RF) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for these PIN Diodes
are switches and attenuators in wireless, mobile and
TV-systems.
2
3
1
1
2
18380
3
Features
Mechanical Data
• High voltage current controlled RF resistor
Case: SOT323 plastic case
Weight: approx. 6.0 mg
Packaging Codes/Options:
• Small diode capacitance
• Low series inductance
e3
• Low forward resistance
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
• Improved performance due to two seperated dice
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• For frequencies up to 3 GHz
• RF-signal tuning
• Signal attenuator and switches
• Mobile, wireless and TV-Applications
Parts Table
Part
Ordering code
Marking
DW5
Remarks
BAR64V-05W-V
BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08
Tape and reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VR
Value
Unit
V
Reverse voltage
100
100
IF
Forward current
mA
°C
Tj
Junction temperature
Storage temperature range
150
Tstg
- 55 to + 150
°C
Document Number 81836
Rev. 1.1, 25-Feb-08
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For technical support, please contact: Diodes-SSP@vishay.com
1
BAR64V-05W-V
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VR
IR
Min.
100
Typ.
Max.
Unit
V
IR = 10 µA
VR = 50 V
Reverse voltage
Reverse current
Forward voltage
50
nA
V
IF = 50 mA
VF
CD
CD
CD
rf
1.1
f = 1 MHz, VR = 0
0.5
0.37
0.23
10
pF
pF
pF
Ω
f = 1 MHz, VR = 1 V
f = 1 MHz, VR = 20 V
f = 100 MHz, IF = 1 mA
f = 100 MHz, IF = 10 mA
f = 100 MHz, IF = 100 mA
IF = 10 mA, IR = 6 mA, iR = 3 mA
Diode capacitance
Forward resistance
0.5
0.35
20
rf
2.0
0.8
1.8
1
3.8
Ω
rf
1.35
Ω
trr
Charge carrier life time
Series inductance
µs
nH
LS
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
100.00
10.00
1.00
100.0
f = 100 MHz
10.0
1.0
0.1
0.10
0.01
0.1
1
10
100
0.5
0.6
0.7
0.8
0.9
1.0
18342
IF- Forward Current (mA)
18326
VF - Forward Voltage (V)
Figure 1. Forward Resistance vs. Forward Current
Figure 3. Forward Current vs. Forward Voltage
12
0.50
I
I
= 10 mA
f = 1 MHz
0.45
10
F
=
=
6 mA
3 mA
8
R
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
i
rr
6
4
2
0
- 2
- 4
- 6
- 8
0
4
8
12
16
20
24
28
- 500
500
1500
2500
3500
18334
VR - Reverse Voltage (V)
trr - Reverse Recovery Time (ns)
18338
Figure 2. Diode Capacitance vs. Reverse Voltage
Figure 4. Typical Charge Recovery Curve
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Document Number 81836
Rev. 1.1, 25-Feb-08
For technical support, please contact: Diodes-SSP@vishay.com
BAR64V-05W-V
Vishay Semiconductors
0
- 0.5
- 1
IF = 3mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
- 1.5
- 2
IF = 0.5 mA
- 2.5
- 3
0
0.5
1
1.5
2
2.5
3
3.5
f - Frequency (GHz)
21027
Figure 5. Insertion Loss of One Diode Inserted in Series with 50 Ω
Strip Line
0
- 5
- 10
- 15
VR = 0, diode zero-biased
- 20
- 25
0
0.5
1
1.5
2
2.5
3
3.5
21028
f - Frequency ( GHz )
Figure 6. Isolation of One Diode Inserted in Series with 50 Ω
Strip Line
150
100
f = 1.8 GHz
f = 0.9 GHz
50
0
0.1
1
10
IF - Forward Current (mA)
21029
Figure 7. Second Order Intercept Point for One Diode Inserted in
50 Ω Strip Line
Document Number 81836
Rev. 1.1, 25-Feb-08
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For technical support, please contact: Diodes-SSP@vishay.com
BAR64V-05W-V
Vishay Semiconductors
Package Dimensions in mm (inches): SOT323-V
2.2 [0.087]
2.0 [0.079]
0.46 [0.018]
0.26 [0.010]
0.4 [0.016]
0.525 [0.021] ref.
0.2 [0.008]
2.45 [0.096]
2.15 [0.085]
0.65 [0.026] typ.
1.4 [0.055]
1.2 [0.047]
foot print recommendation:
0.6 [0.024]
0.65 [0.026]
1.3 [0.051]
Created - Date: 21 February 2008
Document no.: 6.541-5040.02-4
21113
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4
Document Number 81836
Rev. 1.1, 25-Feb-08
For technical support, please contact: Diodes-SSP@vishay.com
BAR64V-05W-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81836
Rev. 1.1, 25-Feb-08
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For technical support, please contact: Diodes-SSP@vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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