BAR65-02V [INFINEON]
Silicon PIN Diode; 硅PIN二极管
| 型号： | BAR65-02V |
| 厂家： | 
Infineon |
| 描述： | Silicon PIN Diode |
| 文件： | 总8页 (文件大小：468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAR65...
Silicon PIN Diode
Series diode for mobile communication in
low loss transmit-receiver switches
Band switch for TV-tuners
Very low forward resistance (typ. 0.65 @ 5 mA)
Low capacitance (typ. 0.5 pF @ 0V)
Fast switching applications
BAR65-02L
BAR65-02V
BAR65-03W
BAR65-07
4
3
D
1
D
2
1
2
1
2
Type
Package
TSLP-2-1
SC79
SOD323
SOT143
Configuration
single, leadless
single
L (nH) Marking
S
BAR65-02L *
BAR65-02V
BAR65-03W
BAR65-07
0.4
NN
0.6
1.8
2
N
single
M/blue
Ms
parallel pair
* Preliminary Data
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
30
100
V
mA
mW
Diode reverse voltage
Forward current
Total power dissipation
V
R
I
F
P
tot
BAR65-02L, T
BAR65-02V, T
BAR65-03W, T
128°C
118°C
113°C
250
250
250
250
S
S
S
BAR65-07, T
57°C
S
150
°C
Junction temperature
T
j
Operating temperature range
Storage temperature
T
T
-55 ... 125
-55 ... 150
Feb-04-2003
1
BAR65...
Thermal Resistance
Parameter
Junction - soldering point
BAR65-02L
Symbol
Value
Unit
K/W
1)
R
thJS
90
BAR65-02V
BAR65-03W
BAR65-07
130
145
370
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
-
20
Reverse current
I
nA
V
R
V = 20 V
R
0.93
1
Forward voltage
V
F
I = 100 mA
F
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
Feb-04-2003
2
BAR65...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
pF
Diode capacitance
C
T
V = 1 V, f = 1 MHz
-
-
-
0.45
0.4
0.5
0.9
0.8
-
R
V = 3 V, f = 1 MHz
R
V = 0 V, f = 100 MHz ... 1.8 GHz
R
Reverse parallel resistance
R
k
P
V = 0 V, f = 100 MHz
-
-
-
700
10
5
-
-
-
R
V = 0 V, f = 1 GHz
R
V = 0 V, f = 1.8 GHz
R
Forward resistance
r
f
I = 1 mA, f = 100 MHz
-
-
-
1
0.65
0.56
-
F
I = 5 mA, f = 100 MHz
0.95
0.9
F
I = 10 mA, f = 100 MHz
F
-
80
-
ns
Charge carrier life time
rr
I = 10 mA, I = 6 mA, measured at I = 3 mA,
F
R
R
R = 100
L
I-region width
W
|S |
21
-
3.5
-
µm
dB
I
1)
2
Insertion loss
I = 1 mA, f = 1.8 GHz
-
-
-
-0.08
-0.06
-0.05
-
-
-
F
I = 5 mA, f = 1.8 GHz
F
I = 10 mA, f = 1.8 GHz
F
1)
2
Isolation
|S |
21
V = 0 V, f = 0.9 GHz
-
-
-
-12
-7
-5
-
-
-
R
V = 0 V, f = 1.8 GHz
R
V = 0 V, f = 2.45 GHz
R
1BAR65-02L in series configuration,Z = 50
Feb-04-2003
3
BAR65...
Diode capacitance C = (V )
Reverse parallel resistance R = (V )
P R
T
R
f = Parameter
f = Parameter
10 4
KOhm
0.5
F
100 MHz
10 3
10 2
10 1
10 0
10 -1
1 MHz ... 1.8 GHz
0.4
0.35
0.3
1 GHz
1.8 GHz
0.25
0.2
0.15
0.1
V
V
0
2
4
6
8
10 12 14 16
20
0
2
4
6
8
10 12 14 16
20
VR
VR
Forward resistance r = (I )
Forward current I = (V )
F F
f
F
f = 100MHz
T = Parameter
A
10 1
10 0
A
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
Ohm
10 0
-40 °C
25 °C
85 °C
125 °C
10 -1
10 -2
10 -1
10 0
10 1
10 2
0
0.2
0.4
0.6
0.8
1.2
mA
V
I
V
F
F
Feb-04-2003
4
BAR65...
Forward current I = (T )
Forward current I = (T )
F S
F
S
BAR65-02L
BAR65-02V
120
mA
120
mA
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Forward current I = (T )
Forward current I = (T )
F S
F
S
BAR65-03W
BAR65-07
120
mA
120
mA
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Feb-04-2003
5
BAR65...
Permissible Puls Load R
= (t )
Permissible Pulse Load
thJS
p
BAR65-02L
I
/ I
= (t )
Fmax FDC
BAR65-02L
10 1
p
10 2
K/W
D = 0
0.005
0.01
0.02
0.05
0.1
-
10 1
0.5
0.2
0.2
0.5
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
= (t )
Permissible Pulse Load
thJS
p
BAR65-02V
I
/ I
= (t )
Fmax FDC
BAR65-02V
10 2
p
10 3
10 2
D = 0
0,005
0,01
0,02
0,05
0,1
10 1
D = 0,5
0,2
10 1
0,1
0,2
0,05
0,02
0,01
0,005
0
0,5
10 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
T
T
S
S
Feb-04-2003
6
BAR65...
Permissible Puls Load R
BAR65-03W
= (t )
Permissible Pulse Load
I / I = (t )
Fmax FDC
thJS
p
p
BAR65-03W
10 1
10 3
mA
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
mA
0.5
0.2
10 1
0.1
0.2
0.05
0.5
0.02
0.01
0.005
D = 0
10 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
°C
°C
t
p
t
p
Permissible Puls Load R
= (t )
Permissible Pulse Load
thJS
p
BAR65-07
I
/ I
= (t )
Fmax FDC
BAR65-07
10 2
p
10 3
mA
mA
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
0.2
0.5
0.2
0.5
10 1
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
°C
°C
t
t
p
p
Feb-04-2003
7
BAR65...
2
2
Insertion loss |S | = (f)
Isolation |S | = (f)
21
21
I = Parameter
V = Parameter
F
R
BAR65-02L in series configuration,Z = 50
BAR65-02L in series configurationZ = 50
0
0
dB
dB
-0.1
-10
-0.15
10 mA
5 mA
-0.2
-0.25
-0.3
-15
0 V
1 V
1 mA
10 V
0.1 mA
-20
-25
-30
-0.35
-0.4
GHz
GHz
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
3
f
f
Feb-04-2003
8
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